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1. 发明申请

US20120190184A1 PROCESSES AND APPARATUS HAVING A SEMICONDUCTOR FIN 有权
标题翻译：具有SEMICONDUCTOR FIN的工艺和设备
公开(公告)号：US20120190184A1
公开(公告)日：2012-07-26
申请号：US13440383
申请日：2012-04-05
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L21/283 , H01L21/302
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device.
摘要翻译：工艺可以包括在衬底上直接在选择为初始半导体鳍片的区域之上和之上形成掩模，并且减少形成从初始半导体鳍片横向变薄的半导体鳍片的初始半导体鳍片。可以进行该处理，使得掩模在横向上比垂直方向更大程度地退回。在各种实施例中，该方法可以包括从散热片半导体去除材料以实现已经在横向退绕的掩模的阴影之下的减薄的半导体鳍片。电子器件可以包括作为半导体器件的一部分的变薄的半导体鳍片。

2. 发明授权

US07935602B2 Semiconductor processing methods 有权
标题翻译：半导体加工方法
公开(公告)号：US07935602B2
公开(公告)日：2011-05-03
申请号：US11168861
申请日：2005-06-28
申请人： Hongmei Wang , Fred D. Fishburn , Janos Fucsko , T. Earl Allen , Richard H. Lane , Robert J. Hanson , Kevin R. Shea
发明人： Hongmei Wang , Fred D. Fishburn , Janos Fucsko , T. Earl Allen , Richard H. Lane , Robert J. Hanson , Kevin R. Shea
IPC分类号： H01L21/336 , H01L21/311 , H01L21/302
CPC分类号： H01L21/76232
摘要： The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.
摘要翻译：本发明包括形成隔离区域的方法。可以形成开口以延伸到半导体材料中，并且可以用衬垫保护开口的上周边，而下边缘是无衬里的。然后可以对无衬里部分进行蚀刻以形成开口的加宽区域。随后，开口可以用绝缘材料填充以形成隔离区域。晶体管器件然后可以形成在隔离区域的相对侧上，并且与隔离区域彼此电隔离。本发明还包括包含延伸到半导体材料中的电绝缘隔离结构的半导体结构，其结构具有球形底部区域和从底部区域向上延伸到半导体材料表面的杆区域。

3. 发明授权

US06685132B1 Wire stringing cart 失效
标题翻译：钢丝绳车
公开(公告)号：US06685132B1
公开(公告)日：2004-02-03
申请号：US10051030
申请日：2002-01-18
申请人： T. Earl Allen
发明人： T. Earl Allen
IPC分类号： B65H4920
CPC分类号： B65H49/32 , B65H2701/363
摘要： A wire stringing cart for laying out wire in the making of a fence. The wire stringing cart includes a frame assembly designed to be a two-wheel cart with a crossbar member for holding a spool of wire that can be laid out as the cart is moved. The assembly also has a toolbox for housing the tools utilized in making a fence of this sort.
摘要翻译：用于在制作栅栏时铺设电线的电线拉绳车。钢丝绳牵引车包括框架组件，该框架组件被设计为具有横梁的两轮车，用于保持当推车移动时可布置的线轴。该组件还具有用于容纳用于制作这种栅栏的工具的工具箱。

4. 发明授权

US08883575B2 Processes and apparatus having a semiconductor fin 有权
标题翻译：具有半导体散热片的方法和装置
公开(公告)号：US08883575B2
公开(公告)日：2014-11-11
申请号：US13440383
申请日：2012-04-05
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L21/336 , H01L21/467 , H01L21/84 , H01L29/66 , H01L29/78
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device.
摘要翻译：工艺可以包括在衬底上直接在选择为初始半导体鳍片的区域之上和之上形成掩模，并且减少形成从初始半导体鳍片横向变薄的半导体鳍片的初始半导体鳍片。可以进行该处理，使得掩模在横向上比垂直方向更大程度地退回。在各种实施例中，该方法可以包括从散热片半导体去除材料以实现已经在横向退绕的掩模的阴影之下的减薄的半导体鳍片。电子器件可以包括作为半导体器件的一部分的变薄的半导体鳍片。

5. 发明申请

US20110121392A1 PROCESSES AND APPARATUS HAVING A SEMICONDUCTOR FIN 有权
标题翻译：具有SEMICONDUCTOR FIN的工艺和设备
公开(公告)号：US20110121392A1
公开(公告)日：2011-05-26
申请号：US13017854
申请日：2011-01-31
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L27/12
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include first etching a trench isolation dielectric through a dielectric hard mask that abuts the sidewall of a fin semiconductor. The first etch can be carried out to expose at least a portion of the sidewall, causing the dielectric hard mask to recede to a greater degree in the lateral direction than the vertical direction. The process may include second etching the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded hard mask. The thinned semiconductor fin may have a characteristic dimension that can exceed photolithography limits. Electronic devices may include the thinned semiconductor fin as part of a field effect transistor.
摘要翻译：工艺可以包括首先通过与散热片半导体的侧壁邻接的电介质硬掩模蚀刻沟槽隔离电介质。可以执行第一蚀刻以暴露侧壁的至少一部分，使得电介质硬掩模在横向方向上比垂直方向更大程度地退回。该方法可以包括第二蚀刻鳍式半导体以实现减薄的半导体鳍片，其已经在横向后退的硬掩模的阴影之下后退。减薄的半导体鳍片可以具有可超过光刻极限的特征尺寸。电子器件可以包括作为场效应晶体管的一部分的变薄的半导体鳍片。

6. 发明授权

US07880232B2 Processes and apparatus having a semiconductor fin 有权
标题翻译：具有半导体散热片的方法和装置
公开(公告)号：US07880232B2
公开(公告)日：2011-02-01
申请号：US11591627
申请日：2006-11-01
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include first etching a trench isolation dielectric through a dielectric hard mask that abuts the sidewall of a fin semiconductor. The first etch can be carried out to expose at least a portion of the sidewall, causing the dielectric hard mask to recede to a greater degree in the lateral direction than the vertical direction. The process may include second etching the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded hard mask. The thinned semiconductor fin may have a characteristic dimension that can exceed photolithography limits. Electronic devices may include the thinned semiconductor fin as part of a field effect transistor.
摘要翻译：工艺可以包括首先通过与散热片半导体的侧壁邻接的电介质硬掩模蚀刻沟槽隔离电介质。可以执行第一蚀刻以暴露侧壁的至少一部分，使得电介质硬掩模在横向方向上比垂直方向更大程度地退回。该方法可以包括第二蚀刻鳍式半导体以实现减薄的半导体鳍片，其已经在横向后退的硬掩模的阴影之下后退。减薄的半导体鳍片可以具有可超过光刻极限的特征尺寸。电子器件可以包括作为场效应晶体管的一部分的变薄的半导体鳍片。

7. 发明授权

US08154081B2 Processes and apparatus having a semiconductor fin 有权
标题翻译：具有半导体散热片的方法和装置
公开(公告)号：US08154081B2
公开(公告)日：2012-04-10
申请号：US13017854
申请日：2011-01-31
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L27/12
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include first etching a trench isolation dielectric through a dielectric hard mask that abuts the sidewall of a fin semiconductor. The first etch can be carried out to expose at least a portion of the sidewall, causing the dielectric hard mask to recede to a greater degree in the lateral direction than the vertical direction. The process may include second etching the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded hard mask. The thinned semiconductor fin may have a characteristic dimension that can exceed photolithography limits. Electronic devices may include the thinned semiconductor fin as part of a field effect transistor.
摘要翻译：工艺可以包括首先通过与散热片半导体的侧壁邻接的电介质硬掩模蚀刻沟槽隔离电介质。可以执行第一蚀刻以暴露侧壁的至少一部分，使得电介质硬掩模在横向方向上比垂直方向更大程度地退回。该方法可以包括第二蚀刻鳍式半导体以实现减薄的半导体鳍片，其已经在横向后退的硬掩模的阴影之下退化。减薄的半导体鳍片可以具有可超过光刻极限的特征尺寸。电子器件可以包括作为场效应晶体管的一部分的变薄的半导体鳍片。

8. 发明申请

US20080102570A1 Fin field emission transistor apparatus and processes 有权
标题翻译：鳍场发射晶体管装置和工艺
公开(公告)号：US20080102570A1
公开(公告)日：2008-05-01
申请号：US11591627
申请日：2006-11-01
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L21/84 , H01L21/336 , H01L29/76
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include first etching a trench isolation dielectric through a dielectric hard mask that abuts the sidewall of a fin semiconductor. The first etch can be carried out to expose at least a portion of the sidewall, causing the dielectric hard mask to recede to a greater degree in the lateral direction than the vertical direction. The process may include second etching the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded hard mask. The thinned semiconductor fin may have a characteristic dimension that can exceed photolithography limits. Electronic devices may include the thinned semiconductor fin as part of a field effect transistor.
摘要翻译：工艺可以包括首先通过与散热片半导体的侧壁邻接的电介质硬掩模蚀刻沟槽隔离电介质。可以执行第一蚀刻以暴露侧壁的至少一部分，使得电介质硬掩模在横向方向上比垂直方向更大程度地退回。该方法可以包括第二蚀刻鳍式半导体以实现减薄的半导体鳍片，其已经在横向后退的硬掩模的阴影之下后退。减薄的半导体鳍片可以具有可超过光刻极限的特征尺寸。电子器件可以包括作为场效应晶体管的一部分的变薄的半导体鳍片。

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