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1. 发明授权

US06146984A Method and structure for uniform height solder bumps on a semiconductor wafer 有权
标题翻译：在半导体晶片上均匀高度的焊料凸点的方法和结构
公开(公告)号：US06146984A
公开(公告)日：2000-11-14
申请号：US415319
申请日：1999-10-08
申请人： Jacques Leibovitz , Susan J. Swindlehurst
发明人： Jacques Leibovitz , Susan J. Swindlehurst
IPC分类号： H01L21/60 , H01L23/485 , H01L21/44
CPC分类号： H01L24/13 , H01L24/11 , H01L2224/0401 , H01L2224/05624 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , Y10S438/926
摘要： Uniform height solder bumps are created on a semiconductor wafer by exposing a dummy pattern of under bump metal for solder plating. The dummy pattern of exposed under bump metal follows the outer edge outline of a pattern of die that exists on the semiconductor wafer. The dummy pattern of under bump metal is exposed by removing a portion of a layer of photoresist that is deposited over the under bump metal. The dummy pattern of under bump metal is exposed on the wafer at the same time that under bump metal above the contact pads is exposed. Solder material is then plated onto the exposed under bump metal that exists above the contact pads and in the dummy pattern. The dummy pattern of exposed under bump metal around the outer edge of the die pattern causes current crowding to occur primarily at the dummy pattern of exposed under bump metal instead of at the contact pads that are on die at the outer edge of the die pattern. Because current crowding occurs primarily at the dummy pattern of exposed under bump metal instead of at the exposed under bump metal above the contact pads of the outer edge die, the plating current density across the die pattern is more uniform, thereby producing solder bumps having a more uniform height.
摘要翻译：在半导体晶片上形成均匀高度的焊锡凸块，通过暴露焊料镀覆下凸块状金属的虚拟图案。暴露的凸块下金属的伪图案遵循存在于半导体晶片上的管芯图案的外缘轮廓。通过去除沉积在下凸块金属上的光致抗蚀剂层的一部分来暴露凸块下金属的虚拟图案。下凸块金属的虚拟图案在接触垫上方的凸块下方暴露的同时暴露在晶片上。然后将焊料涂覆到存在于接触焊盘上方的裸露图案中的暴露的凸块下金属上。露出的凸块下金属围绕模具图案的外边缘的虚拟图案导致电流拥挤主要发生在暴露的凸块下金属的虚拟图案上，而不是在模具图案的外边缘上的模具上的接触焊盘处发生。因为电流拥挤主要发生在暴露的凸块下金属的虚拟图案上，而不是在外边缘裸片的接触焊盘之上的暴露的凸块下方的凸起金属上，所以模具图案上的电镀电流密度更均匀，从而产生具有更均匀的高度。

2. 发明授权

US6011314A Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps 失效
标题翻译：用于将外围导电焊盘转换成焊料凸块阵列的再分布层和凹凸材料结构
公开(公告)号：US6011314A
公开(公告)日：2000-01-04
申请号：US241221
申请日：1999-02-01
申请人： Jacques Leibovitz , Park-Kee Yu , Ya Yun Zhu , Maria L. Cobarruviaz , Susan J. Swindlehurst , Cheng-Cheng Chang , Kenneth D. Scholz
发明人： Jacques Leibovitz , Park-Kee Yu , Ya Yun Zhu , Maria L. Cobarruviaz , Susan J. Swindlehurst , Cheng-Cheng Chang , Kenneth D. Scholz
IPC分类号： H01L23/485 , H01L23/525 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/10 , H01L23/525 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/30107
摘要： An integrated circuit redistribution structure. The integrated circuit redistribution structure includes a plurality of conductive pads located on an active side of an integrated circuit. The integrated circuit redistribution structure includes a redistribution layer and an under bump material structure for receiving a solder bump. The redistribution layer can include a first mechanically protective layer which adheres to the active side of the integrated circuit. The redistribution layer includes a plurality of conductive lines in which at least one of the conductive lines is connected to at least one conductive pad. Each conductive line includes an adhesion and diffusion barrier layer, an electrical conductor layer, and a first metallic protective layer. The under bump material structure is formed over at least one conductive line. The under bump material structure includes a solder wettable metal layer formed over the redistribution layer, and a second metallic protective layer for receiving the solder bump.
摘要翻译：集成电路再分配结构。集成电路再分配结构包括位于集成电路的有源侧上的多个导电焊盘。集成电路再分配结构包括用于接收焊料凸块的再分布层和凸块下部材料结构。再分配层可以包括粘附到集成电路的有源侧的第一机械保护层。再分配层包括多条导线，其中至少一条导线与至少一个导电焊盘连接。每个导线包括粘附和扩散阻挡层，电导体层和第一金属保护层。底部凸起材料结构形成在至少一条导电线上。下凸块材料结构包括形成在再分配层上的焊料可湿性金属层和用于接收焊料凸块的第二金属保护层。

3. 发明授权

US6085968A Solder retention ring for improved solder bump formation 有权
标题翻译：焊接保持环，用于改善焊料凸点形成
公开(公告)号：US6085968A
公开(公告)日：2000-07-11
申请号：US235579
申请日：1999-01-22
申请人： Susan J. Swindlehurst , Hubert A. Vander Plas , Jacques Leibovitz
发明人： Susan J. Swindlehurst , Hubert A. Vander Plas , Jacques Leibovitz
IPC分类号： B23K3/06 , B23K35/14 , H01L21/60 , B23K31/02 , H01L21/441
CPC分类号： B23K3/0623 , H01L24/11 , B23K2201/36 , H01L2224/1131 , H01L2224/1147 , H01L2224/13099 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01076 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： A method of forming solder bumps on a wafer. The wafer includes at least one substrate, a plurality of solder-wettable pads and a solder wettable retention ring about the periphery of the wafer. The method of forming solder bumps includes forming a non-solder-wettable mask on the wafer which includes a plurality of apertures which align with the solder-wettable pads, and the solder wettable retention ring surrounds the mask. The mask and wafer are positioned within an aperture of a stencil so that the solder wettable retention ring aligns with a gap between the periphery edge of the mask and an inside edge of the aperture of the stencil. Solder paste is applied to the mask so that the solder paste fills the apertures of the mask and the gap. The solder paste is reflowed forming solder bumps on the pads and a solder ring on the solder wettable retention ring. The mask is removed after formation of the solder bumps.
摘要翻译：在晶片上形成焊料凸块的方法。该晶片包括至少一个衬底，多个焊料可润湿焊盘和围绕晶片周边的焊料润湿保持环。形成焊料凸块的方法包括在晶片上形成不可焊接的可湿性掩模，该掩模包括与焊料可湿性焊盘对准的多个孔，并且焊料可润湿保持环围绕掩模。掩模和晶片定位在模板的孔内，使得焊料可湿润保持环与掩模的周边边缘和模板的孔的内边缘之间的间隙对准。将焊膏施加到掩模上，使得焊膏填充掩模的孔和间隙。焊膏被回流焊接在焊盘上形成焊料凸块和焊料润湿保持环上的焊接环。在形成焊料凸块之后，去除掩模。

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