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1. 发明授权

US07541282B2 Methods of forming metal-nitride layers in contact holes 失效
标题翻译：在接触孔中形成金属氮化物层的方法
公开(公告)号：US07541282B2
公开(公告)日：2009-06-02
申请号：US11084576
申请日：2005-03-18
申请人： Sung-ho Han , Rak-hwan Kim , Kyung-in Choi , Sang-woo Lee , Gil-heyun Choi
发明人： Sung-ho Han , Rak-hwan Kim , Kyung-in Choi , Sang-woo Lee , Gil-heyun Choi
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.
摘要翻译：可以在集成电路中形成金属层，在金属氮化物层的凹部内的金属氮化物层中形成氮化物的第一浓度，该金属氮化物层的厚度小于金属中的第二氮浓度邻近凹部的开口的氮化物层。可以在包括在凹部中的金属氮化物层上形成金属层。

2. 发明申请

US20080031990A1 Apparatus for manufacturing megapixel multi-focus lens 有权
标题翻译：用于制造百万像素多焦点镜头的设备
公开(公告)号：US20080031990A1
公开(公告)日：2008-02-07
申请号：US11726704
申请日：2007-03-22
申请人： Myung Sung Woo , Dong Yeon Jung , Sung Ho Han , Yun Hyng Lee , Jung Hyun Park
发明人： Myung Sung Woo , Dong Yeon Jung , Sung Ho Han , Yun Hyng Lee , Jung Hyun Park
IPC分类号： B30B11/00
CPC分类号： C03B11/08 , C03B11/005 , C03B11/122 , C03B11/125 , C03B11/16 , C03B2215/49 , C03B2215/80 , C03B2215/86 , Y02P40/57 , Y10S425/808
摘要： Disclosed herein is an apparatus for manufacturing a megapixel multi-focus lens. The lens manufacturing apparatus of the present invention includes a loading means for supplying a mold body, in which a blank, interposed between upper and lower molds, is placed, to a forming position, a compression-forming means, which preheats, compresses and cools the supplied mold body such that the blank is formed into a multi-focus lens having an aspherical surface, and a discharge means, which discharges the multi-focus lens formed by the compression-forming means. Therefore, processes from loading to discharging can be automated, so that the productivity of the apparatus for manufacturing the multi-focus lens can be markedly enhanced. Furthermore, because the lens manufacturing apparatus is covered with a cabinet, a superior appearance thereof is ensured. In addition, because various electric components for controlling the compression-forming means are provided in the cabinet, it is not necessary to separately install electrical control parts for mechanical parts.
摘要翻译：本文公开了一种用于制造百万像素多焦点透镜的装置。本发明的透镜制造装置包括：用于供给模具主体的装载装置，在模具主体中，将设置在上模和下模之间的坯料放置到成形位置，预压，压缩和冷却的压缩成形装置提供的模具体使得坯料形成为具有非球面的多焦点透镜，以及排出由压缩成形装置形成的多焦点透镜的放电装置。因此，从加载到放电的过程可以自动化，从而可以显着提高用于制造多焦点透镜的装置的生产率。此外，由于透镜制造装置被机壳覆盖，因此确保了其优良的外观。此外，由于在机壳中设置用于控制压缩成形装置的各种电气部件，因此不需要分别安装用于机械部件的电气控制部件。

3. 发明申请

US20050263890A1 Methods of forming metal-nitride layers in contact holes and layers so formed 失效
标题翻译：在形成的接触孔和层中形成金属氮化物层的方法
公开(公告)号：US20050263890A1
公开(公告)日：2005-12-01
申请号：US11084576
申请日：2005-03-18
申请人： Sung-ho Han , Rak-hwan Kim , Kyung-in Choi , Sang-woo Lee , Gil-heyun Choi
发明人： Sung-ho Han , Rak-hwan Kim , Kyung-in Choi , Sang-woo Lee , Gil-heyun Choi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/44 , H01L21/768 , H01L29/40
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.
摘要翻译：可以在集成电路中形成金属层，在金属氮化物层的凹部内的金属氮化物层中形成氮化物的第一浓度，该金属氮化物层的厚度小于金属中的第二氮浓度邻近凹部的开口的氮化物层。可以在包括在凹部中的金属氮化物层上形成金属层。

4. 发明申请

US20100166945A1 Methods of calculating thicknesses of layers and methods of forming layers using the same 审中-公开
标题翻译：计算层厚度的方法和使用其形成层的方法
公开(公告)号：US20100166945A1
公开(公告)日：2010-07-01
申请号：US12654721
申请日：2009-12-30
申请人： Ho-Ki Lee , Sung-Ho Han , Yong-Jin Kim
发明人： Ho-Ki Lee , Sung-Ho Han , Yong-Jin Kim
IPC分类号： C23C14/54 , C23C16/513
CPC分类号： C23C16/52
摘要： A method of calculating a thickness of a layer may include forming the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, and calculating the thickness of the layer from the optical emission spectrum data. A method of forming a layer may include depositing the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, calculating a thickness of the layer using the optical emission spectrum data, and ending the depositing of the layer when the calculated thickness of the layer is within a target thickness range.
摘要翻译：计算层的厚度的方法可以包括在室中的基板上形成层，测量来自室的光发射光谱数据，以及根据光发射光谱数据计算层的厚度。形成层的方法可以包括将层沉积在室中的衬底上，从腔室测量光发射光谱数据，使用光发射光谱数据计算层的厚度，并且当所计算的该层的厚度在目标厚度范围内。

5. 发明授权

US07473091B2 Apparatus for manufacturing megapixel multi-focus lens 有权
标题翻译：用于制造百万像素多焦点镜头的设备
公开(公告)号：US07473091B2
公开(公告)日：2009-01-06
申请号：US11726704
申请日：2007-03-22
申请人： Myung Sung Woo , Dong Yeon Jung , Sung Ho Han , Yun Hyng Lee , Jung Hyun Park
发明人： Myung Sung Woo , Dong Yeon Jung , Sung Ho Han , Yun Hyng Lee , Jung Hyun Park
IPC分类号： B29C43/36
CPC分类号： C03B11/08 , C03B11/005 , C03B11/122 , C03B11/125 , C03B11/16 , C03B2215/49 , C03B2215/80 , C03B2215/86 , Y02P40/57 , Y10S425/808
摘要： Disclosed herein is an apparatus for manufacturing a megapixel multi-focus lens. The lens manufacturing apparatus of the present invention includes a loading means for supplying a mold body, in which a blank, interposed between upper and lower molds, is placed, to a forming position, a compression-forming means, which preheats, compresses and cools the supplied mold body such that the blank is formed into a multi-focus lens having an aspherical surface, and a discharge means, which discharges the multi-focus lens formed by the compression-forming means. Therefore, processes from loading to discharging can be automated, so that the productivity of the apparatus for manufacturing the multi-focus lens can be markedly enhanced. Furthermore, because the lens manufacturing apparatus is covered with a cabinet, a superior appearance thereof is ensured. In addition, because various electric components for controlling the compression-forming means are provided in the cabinet, it is not necessary to separately install electrical control parts for mechanical parts.
摘要翻译：本文公开了一种用于制造百万像素多焦点透镜的装置。本发明的透镜制造装置包括：用于供给模具主体的装载装置，在模具主体中，将设置在上模和下模之间的坯料放置到成形位置，预压，压缩和冷却的压缩成形装置提供的模具体使得坯料形成为具有非球面的多焦点透镜，以及排出由压缩成形装置形成的多焦点透镜的放电装置。因此，从加载到放电的过程可以自动化，从而可以显着提高用于制造多焦点透镜的装置的生产率。此外，由于透镜制造装置被机壳覆盖，因此确保了其优良的外观。此外，由于在机壳中设置用于控制压缩成形装置的各种电气部件，因此不需要分别安装用于机械部件的电气控制部件。

6. 发明授权

US07470612B2 Method of forming metal wiring layer of semiconductor device 有权
标题翻译：形成半导体器件金属布线层的方法
公开(公告)号：US07470612B2
公开(公告)日：2008-12-30
申请号：US11519844
申请日：2006-09-13
申请人： Kyung-in Choi , Sung-ho Han , Sang-woo Lee , Dae-yong Kim
发明人： Kyung-in Choi , Sung-ho Han , Sang-woo Lee , Dae-yong Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76849 , H01L21/76868 , H01L21/76876 , H01L21/76879 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.
摘要翻译：形成半导体器件的金属布线层的方法产生没有缺陷的金属布线。该方法包括形成在衬底上限定凹陷的绝缘层图案，在绝缘层图案上形成共形的第一阻挡金属层，并在第一阻挡金属层上形成第二阻挡金属层，使得第二阻挡金属层将有助于从凹部的底部生长金属，使得金属可以完全填充凹部的底部，从而形成镶嵌线。在形成镶嵌线之后形成蚀刻停止层图案，以便填充未被镶嵌布线占据的凹部的部分。

7. 发明申请

US20070059925A1 Method of forming metal wiring layer of semiconductor device 有权
标题翻译：形成半导体器件金属布线层的方法
公开(公告)号：US20070059925A1
公开(公告)日：2007-03-15
申请号：US11519844
申请日：2006-09-13
申请人： Kyung-in Choi , Sung-ho Han , Sang-woo Lee , Dae-yong Kim
发明人： Kyung-in Choi , Sung-ho Han , Sang-woo Lee , Dae-yong Kim
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76849 , H01L21/76868 , H01L21/76876 , H01L21/76879 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.
摘要翻译：形成半导体器件的金属布线层的方法产生没有缺陷的金属布线。该方法包括形成在衬底上限定凹陷的绝缘层图案，在绝缘层图案上形成共形的第一阻挡金属层，并在第一阻挡金属层上形成第二阻挡金属层，使得第二阻挡金属层将有助于从凹部的底部生长金属，使得金属可以完全填充凹部的底部，从而形成镶嵌线。在形成镶嵌线之后形成蚀刻停止层图案，以便填充未被镶嵌布线占据的凹部的部分。

8. 发明申请

US20090081863A1 METHOD OF FORMING METAL WIRING LAYER OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成金属接线层的半导体器件的方法
公开(公告)号：US20090081863A1
公开(公告)日：2009-03-26
申请号：US12277334
申请日：2008-11-25
申请人： Kyung-in CHOI , Sung-ho HAN , Sang-woo LEE , Dae-yong KIM
发明人： Kyung-in CHOI , Sung-ho HAN , Sang-woo LEE , Dae-yong KIM
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76849 , H01L21/76868 , H01L21/76876 , H01L21/76879 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.
摘要翻译：形成半导体器件的金属布线层的方法产生没有缺陷的金属布线。该方法包括形成在衬底上限定凹陷的绝缘层图案，在绝缘层图案上形成共形的第一阻挡金属层，并在第一阻挡金属层上形成第二阻挡金属层，使得第二阻挡金属层将有助于从凹部的底部生长金属，使得金属可以完全填充凹部的底部，从而形成镶嵌线。在形成镶嵌线之后形成蚀刻停止层图案，以便填充未被镶嵌布线占据的凹部的部分。

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