专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090008739A1 Photo Diodes Having a Conductive Plug Contact to a Buried Layer and Methods of Manufacturing the Same 审中-公开
标题翻译：具有导电插头的照相二极管与埋层接触及其制造方法
公开(公告)号：US20090008739A1
公开(公告)日：2009-01-08
申请号：US12212437
申请日：2008-09-17
申请人： Sung-ryoul Bae , Dong-kyun Nam
发明人： Sung-ryoul Bae , Dong-kyun Nam
IPC分类号： H01L31/103
CPC分类号： H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods of manufacturing a photo diode include sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a substrate. The second and first epitaxial layers are etched to form a trench that exposes a portion of the buried layer. A conductive plug of the first conductivity type is formed in the trench. A first electrode is formed on an upper surface of the second epitaxial layer. A second electrode may be formed to contact an upper surface of the conductive plug. Photodiodes having a conductive plug contact to a buried layer are also provided.
摘要翻译：制造光电二极管的方法包括在衬底上依次形成第一导电类型的掩埋层，第一导电类型的第一外延层和第二导电类型的第二外延层。蚀刻第二和第一外延层以形成暴露一部分掩埋层的沟槽。在沟槽中形成第一导电类型的导电插塞。第一电极形成在第二外延层的上表面上。可以形成第二电极以接触导电插塞的上表面。还提供了具有与埋层接触的导电插头的光电二极管。

2. 发明授权

US07465638B2 Bipolar transistor and fabricating method thereof 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US07465638B2
公开(公告)日：2008-12-16
申请号：US11411840
申请日：2006-04-27
申请人： Kye-Won Maeng , Sung-Ryoul Bae , Dong-Kyun Nam , Tae-Jin Kim
发明人： Kye-Won Maeng , Sung-Ryoul Bae , Dong-Kyun Nam , Tae-Jin Kim
IPC分类号： H01L21/331 , H01L29/70
CPC分类号： H01L29/7378 , H01L29/41708 , H01L29/66242 , H01L29/66272 , H01L29/7322
摘要： There is provided a bipolar transistor (with a respective fabrication method) that provides superior noise characteristics and gain diffusion. The fabricating method includes forming a first base region at a collector region, which in turn is formed on a substrate. A first silicon layer is formed on the base region, and a second silicon layer is formed on the first silicon layer using a forming method different from the method used in forming the first silicon layer. An emitter region is then formed from impurities at the base region by performing a thermal process.
摘要翻译：提供了提供优异的噪声特性和增益扩散的双极晶体管（具有各自的制造方法）。制造方法包括在集电区域形成第一基极区域，该第一基极区域依次形成在基板上。在基底区域上形成第一硅层，并且使用与形成第一硅层的方法不同的形成方法，在第一硅层上形成第二硅层。然后通过进行热处理在基极区域由杂质形成发射极区域。

3. 发明授权

US07427530B2 Method of manufacturing photo diodes having a conductive plug contact to a buried layer 失效
标题翻译：制造具有与掩埋层的导电插头接触的光电二极管的方法
公开(公告)号：US07427530B2
公开(公告)日：2008-09-23
申请号：US10953438
申请日：2004-09-29
申请人： Sung-ryoul Bae , Dong-kyun Nam
发明人： Sung-ryoul Bae , Dong-kyun Nam
IPC分类号： H01L21/00
CPC分类号： H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods of manufacturing a photo diode include sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a substrate. The second and first epitaxial layers are etched to form a trench that exposes a portion of the buried layer. A conductive plug of the first conductivity type is formed in the trench. A first electrode is formed on an upper surface of the second epitaxial layer. A second electrode may be formed to contact an upper surface of the conductive plug. Photodiodes having a conductive plug contact to a buried layer are also provided.
摘要翻译：制造光电二极管的方法包括在衬底上依次形成第一导电类型的掩埋层，第一导电类型的第一外延层和第二导电类型的第二外延层。蚀刻第二和第一外延层以形成暴露一部分掩埋层的沟槽。在沟槽中形成第一导电类型的导电插塞。第一电极形成在第二外延层的上表面上。可以形成第二电极以接触导电插塞的上表面。还提供了具有与埋层接触的导电插头的光电二极管。

4. 发明申请

US20070243656A1 PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：光电及其制造方法
公开(公告)号：US20070243656A1
公开(公告)日：2007-10-18
申请号：US11670457
申请日：2007-02-02
申请人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
发明人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
IPC分类号： H01L31/18
CPC分类号： H01L31/105 , H01L31/02168 , Y02E10/50
摘要： A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.
摘要翻译：提供光电二极管和制造光电二极管的方法。该方法包括在半导体衬底上形成包括光接收单元和电极单元的二极管结结构，在接合结构上形成缓冲氧化物层和蚀刻阻挡层，形成层间绝缘层和金属间绝缘层和互连通过蚀刻金属间绝缘层和层间绝缘层来暴露蚀刻阻挡层，通过干法蚀刻去除蚀刻阻挡层的一部分和光接收单元的缓冲氧化物层，并且暴露光的半导体表面接收单元通过湿蚀刻。

5. 发明授权

US07135349B2 Photodiode and method of fabricating the same 失效
标题翻译：光电二极管及其制造方法
公开(公告)号：US07135349B2
公开(公告)日：2006-11-14
申请号：US10970957
申请日：2004-10-22
申请人： Kye-Won Maeng , Sung-Ryoul Bae
发明人： Kye-Won Maeng , Sung-Ryoul Bae
IPC分类号： H01L21/00 , H01L31/06
CPC分类号： H01L27/1443 , H01L27/14647 , H01L31/103 , H01L31/18
摘要： Photodiodes and methods of fabricating photodiodes are provided. For example, a method of fabricating a photodiode includes forming a buried layer of a first conductive type on a semiconductor substrate and forming a first intrinsic capping epitaxial layer on the buried layer. A first intrinsic epitaxial layer of the first conductive type is formed on the first intrinsic capping epitaxial layer. A first junction region of the first conductive type is formed in the first intrinsic epitaxial layer. A second intrinsic epitaxial layer of the second conductive type is formed on the first junction region and the first intrinsic epitaxial layer. A second intrinsic capping epitaxial layer is formed on the second intrinsic epitaxial layer. A second junction region of the first conductive type is formed such that the second junction region passes through the second intrinsic capping epitaxial layer and the second intrinsic epitaxial layer. The second junction region contacts the first junction region. A first electrode is formed on a surface of the second junction region and a second electrode is formed on a surface of the second intrinsic capping epitaxial layer.
摘要翻译：提供光电二极管和制造光电二极管的方法。例如，制造光电二极管的方法包括在半导体衬底上形成第一导电类型的掩埋层并在掩埋层上形成第一本征覆盖外延层。第一导电类型的第一本征外延层形成在第一本征覆盖外延层上。第一导电类型的第一结区形成在第一本征外延层中。第二导电类型的第二本征外延层形成在第一结区和第一本征外延层上。第二本征覆盖外延层形成在第二本征外延层上。形成第一导电类型的第二结区，使得第二结区通过第二本征覆盖外延层和第二本征外延层。第二结区接触第一结区。第一电极形成在第二接合区域的表面上，第二电极形成在第二本征覆盖外延层的表面上。

6. 发明申请

US20050148135A1 METHOD OF FABRICATING A COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR 失效
标题翻译：补充双极晶体管晶体管的方法
公开(公告)号：US20050148135A1
公开(公告)日：2005-07-07
申请号：US11025054
申请日：2004-12-30
申请人： Dong-kyun Nam , Sung-ryoul Bae
发明人： Dong-kyun Nam , Sung-ryoul Bae
IPC分类号： H01L29/73 , H01L21/8228 , H01L21/8238
CPC分类号： H01L21/82285
摘要： A method of fabricating a complementary bipolar junction transistor includes forming a polycrystalline silicon layer on an NPN bipolar junction transistor region and a PNP bipolar junction transistor region, respectively implanting an N-type impurity and a P-type impurity into the polycrystalline silicon layer, and then diffusing to respectively form an N-type emitter region and a P-type emitter region within a P-type base region and an N-type base region. By patterning the polycrystalline silicon layer, an N-type emitter electrode and a P-type emitter electrode are simultaneously formed. The polycrystalline silicon layer is used for simultaneously forming the N-type emitter electrode of the NPN bipolar junction transistor and the P-type emitter electrode of the PNP bipolar junction transistor by a single depositing and etching process.
摘要翻译：制造互补双极结晶体管的方法包括在NPN双极结晶体管区域和PNP双极结晶体管区域上形成多晶硅层，分别将N型杂质和P型杂质注入到多晶硅层中，以及然后扩散以在P型基极区域和N型基极区域内分别形成N型发射极区域和P型发射极区域。通过构图多晶硅层，同时形成N型发射极和P型发射极。多晶硅层用于通过单个沉积和蚀刻工艺同时形成NPN双极结晶体管的N型发射极和PNP双极结型晶体管的P型发射极。

7. 发明申请

US20050133838A1 Photodiode and method of manufacturing the same 有权
标题翻译：光电二极管及其制造方法
公开(公告)号：US20050133838A1
公开(公告)日：2005-06-23
申请号：US11002832
申请日：2004-12-02
申请人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
发明人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
IPC分类号： H01L31/10 , H01L31/0216 , H01L31/0232 , H01L31/105
CPC分类号： H01L31/105 , H01L31/02168 , Y02E10/50
摘要： A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.
摘要翻译：提供光电二极管和制造光电二极管的方法。该方法包括在半导体衬底上形成包括光接收单元和电极单元的二极管结结构，在接合结构上形成缓冲氧化物层和蚀刻阻挡层，形成层间绝缘层和金属间绝缘层和互连通过蚀刻金属间绝缘层和层间绝缘层来暴露蚀刻阻挡层，通过干法蚀刻去除蚀刻阻挡层的一部分和光接收单元的缓冲氧化物层，并且暴露光的半导体表面接收单元通过湿蚀刻。

8. 发明申请

US20050101073A1 Photo diodes having a conductive plug contact to a buried layer and methods of manufacturing the same 失效
标题翻译：具有与埋层相接触的导电插头的光电二极管及其制造方法
公开(公告)号：US20050101073A1
公开(公告)日：2005-05-12
申请号：US10953438
申请日：2004-09-29
申请人： Sung-ryoul Bae , Dong-kyun Nam
发明人： Sung-ryoul Bae , Dong-kyun Nam
IPC分类号： H01L27/14 , H01L21/00 , H01L21/28 , H01L21/30 , H01L21/46 , H01L21/84 , H01L31/0224 , H01L31/06 , H01L31/072 , H01L31/075 , H01L31/10 , H01L31/103 , H01L31/18
CPC分类号： H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods of manufacturing a photo diode include sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a substrate. The second and first epitaxial layers are etched to form a trench that exposes a portion of the buried layer. A conductive plug of the first conductivity type is formed in the trench. A first electrode is formed on an upper surface of the second epitaxial layer. A second electrode may be formed to contact an upper surface of the conductive plug. Photodiodes having a conductive plug contact to a buried layer are also provided.
摘要翻译：制造光电二极管的方法包括在衬底上依次形成第一导电类型的掩埋层，第一导电类型的第一外延层和第二导电类型的第二外延层。蚀刻第二和第一外延层以形成暴露一部分掩埋层的沟槽。在沟槽中形成第一导电类型的导电插塞。第一电极形成在第二外延层的上表面上。可以形成第二电极以接触导电插塞的上表面。还提供了具有与埋层接触的导电插头的光电二极管。

9. 发明申请

US20090130793A1 PHOTO DIODE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：照相二极管及其制造方法
公开(公告)号：US20090130793A1
公开(公告)日：2009-05-21
申请号：US12339515
申请日：2008-12-19
申请人： Kye-wong MAENG , Sung-ryoul BAE
发明人： Kye-wong MAENG , Sung-ryoul BAE
IPC分类号： H01L21/22
CPC分类号： H01L31/103 , H01L31/18
摘要： A method of fabricating a photo diode includes sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a semiconductor substrate; forming a doped oxide film, including impurities of the second conductivity type, on the second epitaxial layer; forming a silicon nitride film on the oxide film; and patterning the oxide film and the silicon nitride film to sequentially form an oxide film pattern of the second conductivity type and a silicon nitride film pattern, respectively. The second conductivity type impurities are diffused from the oxide film pattern into the second epitaxial layer using a heat diffusion process to form a doped shallow junction layer of the second conductivity type, which converts the oxide film pattern into a non-conductive oxide film pattern.
摘要翻译：制造光电二极管的方法包括在半导体衬底上依次形成第一导电类型的掩埋层，第一导电类型的第一外延层和第二导电类型的第二外延层; 在所述第二外延层上形成包括所述第二导电类型的杂质的掺杂氧化物膜; 在氧化膜上形成氮化硅膜; 以及图案化氧化膜和氮化硅膜以分别依次形成第二导电类型的氧化膜图案和氮化硅膜图案。使用热扩散工艺将第二导电型杂质从氧化膜图案扩散到第二外延层中，以形成第二导电类型的掺杂浅结层，其将氧化膜图案转换为非导电氧化物膜图案。

10. 发明授权

US06930008B2 Method of fabricating a complementary bipolar junction transistor 失效
标题翻译：制造互补双极结型晶体管的方法
公开(公告)号：US06930008B2
公开(公告)日：2005-08-16
申请号：US11025054
申请日：2004-12-30
申请人： Dong-kyun Nam , Sung-ryoul Bae
发明人： Dong-kyun Nam , Sung-ryoul Bae
IPC分类号： H01L29/73 , H01L21/8228
CPC分类号： H01L21/82285
摘要： A method of fabricating a complementary bipolar junction transistor includes forming a polycrystalline silicon layer on an NPN bipolar junction transistor region and a PNP bipolar junction transistor region, respectively implanting an N-type impurity and a P-type impurity into the polycrystalline silicon layer, and then diffusing to respectively form an N-type emitter region and a P-type emitter region within a P-type base region and an N-type base region. By patterning the polycrystalline silicon layer, an N-type emitter electrode and a P-type emitter electrode are simultaneously formed. The polycrystalline silicon layer is used for simultaneously forming the N-type emitter electrode of the NPN bipolar junction transistor and the P-type emitter electrode of the PNP bipolar junction transistor by a single depositing and etching process.
摘要翻译：制造互补双极结晶体管的方法包括在NPN双极结晶体管区域和PNP双极结晶体管区域上形成分别将N型杂质和P型杂质注入到多晶硅层中的多晶硅层，以及然后扩散以在P型基极区域和N型基极区域内分别形成N型发射极区域和P型发射极区域。通过构图多晶硅层，同时形成N型发射极和P型发射极。多晶硅层用于通过单个沉积和蚀刻工艺同时形成NPN双极结晶体管的N型发射极和PNP双极结型晶体管的P型发射极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式