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1. 发明授权

US5891781A Method for coding mask read-only memory 失效
标题翻译：掩码只读存储器的编码方法
公开(公告)号：US5891781A
公开(公告)日：1999-04-06
申请号：US924318
申请日：1997-09-05
申请人： Sung Gon Choi
发明人： Sung Gon Choi
IPC分类号： H01L21/82 , H01L21/8246 , H01L27/112 , H01L21/22
CPC分类号： H01L27/11266 , H01L27/112
摘要： A method for coding a mask read-only memory (ROM) implants impurity ions into a semiconductor substrate so as to form a first impurity region, and forms a plurality of gate electrodes on the semiconductor substrate. Next, sidewalls on both sides of each of the gate electrodes are formed, and source and drain impurity regions are formed in the semiconductor substrate at respective sides of each of the gate electrodes. Then a mask over the semiconductor substrate, which exposes at least one of the gate electrodes and which exposes the source and drain impurity regions associated with the exposed gate electrode, is formed, and code ions are implanted into the semiconductor substrate. The semiconductor substrate is also annealed so that the source and drain impurity regions associated with the exposed gate electrode electrically contact the first impurity region.
摘要翻译：用于对掩模只读存储器（ROM）进行编码的方法将杂质离子注入到半导体衬底中以形成第一杂质区，并在半导体衬底上形成多个栅电极。接下来，形成每个栅电极两侧的侧壁，并且在每个栅极的各个侧面的半导体衬底中形成源极和漏极杂质区。然后，形成半导体衬底上的掩模，其露出至少一个栅电极并暴露与暴露的栅电极相关的源极和漏极杂质区，并且将码离子注入到半导体衬底中。半导体衬底也被退火，使得与暴露的栅极电极相关联的源极和漏极杂质区域与第一杂质区域电接触。

2. 发明授权

US08110873B2 High voltage transistor 失效
标题翻译：高压晶体管
公开(公告)号：US08110873B2
公开(公告)日：2012-02-07
申请号：US12339448
申请日：2008-12-19
申请人： Sung-Gon Choi , Hee-Seog Jeon
发明人： Sung-Gon Choi , Hee-Seog Jeon
IPC分类号： H01L21/76
CPC分类号： H01L29/0847 , H01L21/76895 , H01L29/0692 , H01L29/402 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66659 , H01L29/7831 , H01L29/7833 , H01L29/7835
摘要： A high voltage transistor that includes a substrate where an active region is defined, a first impurity region and a second impurity region in the active region and a third impurity region between the first and second impurity regions, and a first gate electrode on the active region between the first impurity region and the third impurity region and a second gate electrode on the active region between the second impurity region and the third impurity region.
摘要翻译：一种高电压晶体管，包括限定有源区的衬底，所述有源区中的第一杂质区和第二杂质区以及所述第一和第二杂质区之间的第三杂质区，以及所述有源区上的第一栅电极在第一杂质区域和第三杂质区域之间的有源区域上的第二栅电极和第二杂质区域之间的有源区域上的第二栅电极。

3. 发明申请

US20080076242A1 Method of fabricating nonvolatile memory device 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080076242A1
公开(公告)日：2008-03-27
申请号：US11893063
申请日：2007-08-14
申请人： Sung-Gon Choi , Hyun-Khe Yoo , Bo-Young Seo , Chang-Min Jeon , Ji-Do Ryu
发明人： Sung-Gon Choi , Hyun-Khe Yoo , Bo-Young Seo , Chang-Min Jeon , Ji-Do Ryu
IPC分类号： H01L21/3205
CPC分类号： H01L27/11526 , H01L27/11546
摘要： A method of fabricating a nonvolatile memory device includes preparing a semiconductor substrate having a cell array region and a peripheral circuit region. Cell gate patterns are formed in the cell array region, and peripheral gate patterns are formed in the peripheral circuit region. Each of the cell gate patterns includes a control gate pattern and a capping pattern, and each of the peripheral gate patterns has a smaller thickness than the cell gate pattern. An interlayer dielectric layer is formed on the resultant structure having the cell gate patterns and the peripheral gate patterns. The interlayer dielectric layer is planarized by etching until the top surface of the capping pattern is exposed, so that an interlayer dielectric pattern is formed. The interlayer dielectric pattern covers the peripheral circuit region and fills a space between the cell gate patterns. An ion implantation process is performed using the interlayer dielectric pattern as an ion mask so that impurity ions are selectively implanted into the control gate pattern.
摘要翻译：制造非易失性存储器件的方法包括制备具有单元阵列区域和外围电路区域的半导体衬底。在单元阵列区域中形成单元栅极图案，并且在外围电路区域中形成外围栅极图案。每个单元栅极图案包括控制栅极图案和封盖图案，并且每个外围栅极图案具有比单元栅极图案更小的厚度。在具有单元栅极图案和外围栅极图案的合成结构上形成层间介电层。通过蚀刻来平坦化层间绝缘层，直到覆盖图案的顶表面露出，形成层间电介质图案。层间电介质图案覆盖外围电路区域并填充单元栅极图案之间的空间。使用层间电介质图案作为离子掩模进行离子注入工艺，使得杂质离子被选择性地注入到控制栅极图案中。

4. 发明申请

US20090194815A1 HIGH VOLTAGE TRANSISTOR 失效
标题翻译：高压晶体管
公开(公告)号：US20090194815A1
公开(公告)日：2009-08-06
申请号：US12339448
申请日：2008-12-19
申请人： Sung-Gon CHOI , Hee-Seog Jeon
发明人： Sung-Gon CHOI , Hee-Seog Jeon
IPC分类号： H01L29/78 , H01L27/092
CPC分类号： H01L29/0847 , H01L21/76895 , H01L29/0692 , H01L29/402 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66659 , H01L29/7831 , H01L29/7833 , H01L29/7835
摘要： A high voltage transistor that includes a substrate where an active region is defined, a first impurity region and a second impurity region in the active region and a third impurity region between the first and second impurity regions, and a first gate electrode on the active region between the first impurity region and the third impurity region and a second gate electrode on the active region between the second impurity region and the third impurity region.
摘要翻译：一种高电压晶体管，包括限定有源区的衬底，所述有源区中的第一杂质区和第二杂质区以及所述第一和第二杂质区之间的第三杂质区，以及所述有源区上的第一栅电极在第一杂质区域和第三杂质区域之间的有源区域上的第二栅电极和第二杂质区域之间的有源区域上的第二栅电极。

5. 发明申请

US20080089136A1 NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME AND METHOD OF OPERATING THE SAME 失效
标题翻译：非易失性存储器件，其制造方法及其操作方法
公开(公告)号：US20080089136A1
公开(公告)日：2008-04-17
申请号：US11870762
申请日：2007-10-11
申请人： Hyun-Khe Yoo , Jeong-Uk Han , Hee-Seog Jeon , Sung-Gon Choi , Bo-Young Seo , Chang-Min Jeon , Ji-Do Ryu
发明人： Hyun-Khe Yoo , Jeong-Uk Han , Hee-Seog Jeon , Sung-Gon Choi , Bo-Young Seo , Chang-Min Jeon , Ji-Do Ryu
IPC分类号： G11C11/34 , H01L21/336 , H01L29/788
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A non-volatile memory device includes a first sensing line, a first word line, a depletion channel region, and impurity regions. The first sensing line and the first word line are formed adjacent to each other in parallel on a substrate. The first sensing line and the first word line have a tunnel oxide layer, a first conductive pattern, a dielectric layer pattern and a second conductive pattern sequentially stacked on the substrate. The depletion channel region is formed at an upper portion of the substrate under the first sensing line. The impurity regions are formed at upper portions of the substrate exposed by the first sensing line and the first word line.
摘要翻译：非易失性存储器件包括第一感测线，第一字线，耗尽沟道区和杂质区。第一感测线和第一字线在基板上彼此平行地相邻地形成。第一感测线和第一字线具有依次层叠在衬底上的隧道氧化物层，第一导电图案，电介质层图案和第二导电图案。耗尽沟道区形成在第一感测线下方的衬底的上部。在由第一感测线和第一字线露出的衬底的上部形成杂质区。

6. 发明申请

US20080012062A1 EEPROM DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译： EEPROM装置及其制造方法
公开(公告)号：US20080012062A1
公开(公告)日：2008-01-17
申请号：US11775871
申请日：2007-07-11
申请人： Hyun-Khe YOO , Jeong-Uk HAN , Hee-Seog JEON , Sung-Gon CHOI , Bo-young SEO , Chang-Min JEON , Ji-Do RYU
发明人： Hyun-Khe YOO , Jeong-Uk HAN , Hee-Seog JEON , Sung-Gon CHOI , Bo-young SEO , Chang-Min JEON , Ji-Do RYU
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/11524 , H01L27/115 , H01L27/11521 , H01L29/66825
摘要： An electrically erasable programmable read-only memory (EEPROM) device includes an EEPROM cell located on a semiconductor substrate, the EEPROM cell including a memory transistor and a selection transistor. A source region and a drain region are located on the semiconductor substrate adjacent to opposite sides of the EEPROM cell, respectively, and a floating region is positioned between the memory transistor and the selection transistor. The source region includes a first doped region, a second doped region and a third doped region, where the first doped region surrounds a bottom surface and sidewalls of the second doped region, and the second doped surrounds a bottom surface and sidewalls of the third doped region. Also, a second impurity concentration of the second doped region is higher than that of the first doped region and lower than that of the third doped region.
摘要翻译：电可擦除可编程只读存储器（EEPROM）装置包括位于半导体衬底上的EEPROM单元，EEPROM单元包括存储晶体管和选择晶体管。源极区域和漏极区域分别位于与EEPROM单元的相对侧相邻的半导体衬底上，并且浮置区域位于存储晶体管和选择晶体管之间。源极区域包括第一掺杂区域，第二掺杂区域和第三掺杂区域，其中第一掺杂区域围绕第二掺杂区域的底表面和侧壁，第二掺杂区域包围底表面和第三掺杂区域的侧壁地区。此外，第二掺杂区域的第二杂质浓度高于第一掺杂区域的第二杂质浓度，并且低于第三掺杂区域的第二杂质浓度。

7. 发明申请

US20080008003A1 Non-Volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US20080008003A1
公开(公告)日：2008-01-10
申请号：US11789003
申请日：2007-04-23
申请人： Hyun-Khe Yoo , Ji-Do Ryu , Bo-Young Seo , Chang-Min Jeon , Hee-Seog Jeon , Sung-Gon Choi , Jeong-Uk Han
发明人： Hyun-Khe Yoo , Ji-Do Ryu , Bo-Young Seo , Chang-Min Jeon , Hee-Seog Jeon , Sung-Gon Choi , Jeong-Uk Han
IPC分类号： G11C11/34
CPC分类号： G11C16/0433 , G11C7/18 , G11C16/24 , G11C2207/002
摘要： A non-volatile memory device includes a memory cell block, a first switching block, and a second switching block. A plurality of memory cells are arranged in the memory cell block and each of the memory cells includes a memory transistor having a floating gate and a control gate and is connected to a local bit line and includes a selection transistor connected to the memory transistor in series that is connected to a source line. The first switching block selectively connects a global bit line to the local bit line and the second switching block controls the memory cells in the memory cell block in units of a predetermined number of bits. The first switching block includes at least two switching devices connected in parallel between the global bit line and the local bit line.
摘要翻译：非易失性存储器件包括存储器单元块，第一切换块和第二切换块。多个存储单元布置在存储单元块中，并且每个存储单元包括具有浮置栅极和控制栅极的存储晶体管，并连接到局部位线，并且包括串联连接到存储晶体管的选择晶体管它连接到源线。第一切换块选择性地将全局位线连接到本地位线，并且第二切换块以预定位数为单位来控制存储单元块中的存储单元。第一切换块包括在全局位线和局部位线之间并联连接的至少两个开关器件。

8. 发明授权

US07697336B2 Non-volatile memory device and method of operating the same 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US07697336B2
公开(公告)日：2010-04-13
申请号：US11903482
申请日：2007-09-21
申请人： Chang-Min Jeon , Hee-Seog Jeon , Hyun-Khe Yoo , Sung-Gon Choi , Bo-Young Seo , Ji-Do Ryu
发明人： Chang-Min Jeon , Hee-Seog Jeon , Hyun-Khe Yoo , Sung-Gon Choi , Bo-Young Seo , Ji-Do Ryu
IPC分类号： G11C11/34
CPC分类号： G11C16/0433 , H01L27/115 , H01L27/11524
摘要： The present invention is directed to a non-volatile memory device and a method of operating the same. The non-volatile memory device includes a first transistor connected to an nth bitline and a second transistor connected to an (n+1)th bitline. The first transistor and the second transistor are serially coupled between the nth bitline and the (n+1)th bitline. The non-volatile memory device may include a 2-transistor 1-bit unit cell where a drain region and a source region of a memory cell have the same or similar structure. Since a cell array of a non-volatile memory device according to the invention may include a 2-transistor 2-bit unit cell, storage capacity of the non-volatile memory device may be doubled.
摘要翻译：本发明涉及一种非易失性存储器件及其操作方法。非易失性存储器件包括连接到第n位线的第一晶体管和连接到第（n + 1）位线的第二晶体管。第一晶体管和第二晶体管串联耦合在第n位线和第（n + 1）位线之间。非易失性存储器件可以包括2晶体管1位单元，其中存储单元的漏极区域和源极区域具有相同或相似的结构。由于根据本发明的非易失性存储器件的单元阵列可以包括2-晶体管2位单位单元，所以非易失性存储器件的存储容量可以加倍。

9. 发明授权

US07696561B2 Non-volatile memory device, method of manufacturing the same and method of operating the same 失效
标题翻译：非易失性存储器件，其制造方法及其操作方法
公开(公告)号：US07696561B2
公开(公告)日：2010-04-13
申请号：US11870762
申请日：2007-10-11
申请人： Hyun-Khe Yoo , Jeong-Uk Han , Hee-Seog Jeon , Sung-Gon Choi , Bo-Young Seo , Chang-Min Jeon , Ji-Do Ryu
发明人： Hyun-Khe Yoo , Jeong-Uk Han , Hee-Seog Jeon , Sung-Gon Choi , Bo-Young Seo , Chang-Min Jeon , Ji-Do Ryu
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A non-volatile memory device includes a first sensing line, a first word line, a depletion channel region, and impurity regions. The first sensing line and the first word line are formed adjacent to each other in parallel on a substrate. The first sensing line and the first word line have a tunnel oxide layer, a first conductive pattern, a dielectric layer pattern and a second conductive pattern sequentially stacked on the substrate. The depletion channel region is formed at an upper portion of the substrate under the first sensing line. The impurity regions are formed at upper portions of the substrate exposed by the first sensing line and the first word line.
摘要翻译：非易失性存储器件包括第一感测线，第一字线，耗尽沟道区和杂质区。第一感测线和第一字线在基板上彼此平行地相邻地形成。第一感测线和第一字线具有依次层叠在衬底上的隧道氧化物层，第一导电图案，电介质层图案和第二导电图案。耗尽沟道区形成在第一感测线下方的衬底的上部。在由第一感测线和第一字线露出的衬底的上部形成杂质区。

10. 发明授权

US07512003B2 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US07512003B2
公开(公告)日：2009-03-31
申请号：US11789003
申请日：2007-04-23
申请人： Hyun-Khe Yoo , Ji-Do Ryu , Bo-Young Seo , Chang-Min Jeon , Hee-Seog Jeon , Sung-Gon Choi , Jeong-Uk Han
发明人： Hyun-Khe Yoo , Ji-Do Ryu , Bo-Young Seo , Chang-Min Jeon , Hee-Seog Jeon , Sung-Gon Choi , Jeong-Uk Han
IPC分类号： G11C11/34
CPC分类号： G11C16/0433 , G11C7/18 , G11C16/24 , G11C2207/002
摘要： A non-volatile memory device includes a memory cell block, a first switching block, and a second switching block. A plurality of memory cells are arranged in the memory cell block and each of the memory cells includes a memory transistor having a floating gate and a control gate and is connected to a local bit line and includes a selection transistor connected to the memory transistor in series that is connected to a source line. The first switching block selectively connects a global bit line to the local bit line and the second switching block controls the memory cells in the memory cell block in units of a predetermined number of bits. The first switching block includes at least two switching devices connected in parallel between the global bit line and the local bit line.
摘要翻译：非易失性存储器件包括存储器单元块，第一切换块和第二切换块。多个存储单元布置在存储单元块中，并且每个存储单元包括具有浮置栅极和控制栅极的存储晶体管，并连接到局部位线，并且包括串联连接到存储晶体管的选择晶体管它连接到源线。第一切换块选择性地将全局位线连接到本地位线，而第二切换块以预定位数为单位来控制存储单元块中的存储单元。第一切换块包括在全局位线和局部位线之间并联连接的至少两个开关器件。

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