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1. 发明授权

US09255356B2 Supporting device and washing machine having the same 有权
标题翻译：配套设备和洗衣机具有相同的功能
公开(公告)号：US09255356B2
公开(公告)日：2016-02-09
申请号：US12923122
申请日：2010-09-02
申请人： Young Seong Cheon , Byoung Mock Kahm , Young Kook Ki , Jong Hun Sung , Sung Hwan Kim
发明人： Young Seong Cheon , Byoung Mock Kahm , Young Kook Ki , Jong Hun Sung , Sung Hwan Kim
IPC分类号： A47B77/06 , D06F39/12 , A47B91/02
CPC分类号： D06F39/125 , A47B91/024
摘要： A supporting device having improved assembly efficiency used to commonly support a washing machine and a drying machine with legs having different sizes, and a washing machine having the same. The supporting device includes a supporting device main body to support a washing machine main body, and supporters installed on the supporting device main body to receive and fix legs connected to the bottom of the washing machine main body, and each supporter includes a guide member to receive each leg, and at least one fixing member to fix each leg.
摘要翻译：具有改进的组装效率的支撑装置，以及具有该支撑装置的洗衣机通常支撑洗衣机和具有不同尺寸的腿部的干燥机。支撑装置包括：支撑装置主体，用于支撑洗衣机主体，支撑装置安装在支撑装置主体上，用于接收和固定连接到洗衣机主体底部的支脚;每个支架包括导向件，接收每条腿，以及至少一个固定构件以固定每个腿。

2. 发明申请

US20160003124A1 VIBRATION REDUCTION DEVICE OF MUFFLER TAIL-PIPE FOR CONSTRUCTION EQUIPMENT 审中-公开
标题翻译：用于建筑设备的疏水尾管的减振装置
公开(公告)号：US20160003124A1
公开(公告)日：2016-01-07
申请号：US14770134
申请日：2013-02-27
申请人： Hyun-Seok KANG , Jeong-Hoon HAM , Sung-Hwan KIM , VOLVO CONSTRUCTION EQUIPMENT AB
发明人： Hyun-Seok KANG , Jeong-Hoon HAM , Sung-Hwan KIM
IPC分类号： F01N13/08
CPC分类号： F01N13/082 , F01N13/1822 , F01N2590/08
摘要： The present invention relates to a vibration reduction device of a muffler tail-pipe for construction equipment, comprising: an engine hood provided to one side of an engine room for the protection of the peripheral parts including an engine and a muffler, and having a through hole at one side of the top surface thereof; the muffler provided to the lower portion of the engine hood in a state where the muffler is connected to one side of the engine; a tail-pipe of which one end is connected to the muffler and the other end is protruded to the outside by penetrating the through hole of the engine hood; and a plurality of elastic support parts for fixing the tail-pipe such that the tail-pipe is elastically supported by the engine hood. The present invention can maximally reduce the vibration transmitted to the tail-pipe by the elastic support means when the tail-pipe vibrates with the muffler due to the vibration of the muffler by the engine, as the tail-pipe connected to the muffler is elastically supported from the engine hood through the elastic support parts. Therefore, the present invention can solve the problem of the connection portion of the muffler and the tail-pipe being easily deformed or damaged by the concentration of the stress to the connection portion of the muffler and the tail-pipe as the tail-pipe vibrates with the muffler according to the vibration of the muffler.
摘要翻译：本发明涉及一种用于建筑设备的消声器尾管的减振装置，包括：发动机罩，其设置在发动机室的一侧，用于保护包括发动机和消音器在内的周边部件，并且具有通孔孔的顶面的一侧; 消音器在消声器连接到发动机的一侧的状态下设置在发动机罩的下部; 其一端连接到消音器的尾管，另一端通过穿过发动机罩的通孔而突出到外部; 以及用于固定尾管的多个弹性支撑部件，使得尾管由发动机罩弹性地支撑。本发明可以最大限度地减少由于发动机由于消音器的振动引起的尾管与消声器振动而由弹性支撑装置传递到尾管的振动，因为连接到消声器的尾管是弹性的通过弹性支撑部件从发动机罩支撑。因此，本发明可以解决当尾管振动时，消音器和尾管的连接部分由于应力集中到消音器和尾管的连接部分而容易变形或损坏的问题消声器根据消声器的振动。

3. 发明授权

US08921258B2 Catalyst for selective oxidation of NH3 to N2 and method for preparing the same 有权
标题翻译：用于NH 3选择性氧化为N 2的催化剂及其制备方法
公开(公告)号：US08921258B2
公开(公告)日：2014-12-30
申请号：US13510182
申请日：2010-11-19
申请人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
发明人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
IPC分类号： B01J23/00 , B01J23/08 , B01J23/32 , B01J23/40 , B01J23/42 , B01J23/44 , B01J23/56 , B01J21/04 , B01J20/00 , B01J27/224 , B01J29/04 , B01D53/94 , B01J23/889
CPC分类号： B01J29/04 , B01D53/9436 , B01D2255/1023 , B01D2255/2073 , B01D2255/20753 , B01D2255/2092 , B01J23/889 , Y10S502/52719
摘要： Disclosed is a catalyst which can convert ammonia contained in exhaust gas from an engine of a vehicle equipped with a Urea-SCR (Urea-Selective Catalytic Reduction) system, to nitrogen, and a method for preparating the same. The catalyst can convert ammonia which is failed to participate in a conversion reaction of NOx to N2 and slipped out of the SCR catalyst, to nitrogen via a SCO (Selective Catalytic Oxidation) reaction, before the ammonia is released to the air.
摘要翻译：公开了一种可以将装备有尿素SCR（尿素选择性催化还原）系统的车辆的发动机排出的废气中的氨转化成氮的催化剂及其制备方法。在将氨释放到空气之前，催化剂可以转化未参与NO x与N 2的转化反应并从SCR催化剂中滑出的氨，通过SCO（选择性催化氧化）反应转化为氮。

4. 外观设计

USD688945S1 Cap for cosmetic containers 有权
标题翻译：化妆品容器盖
公开(公告)号：USD688945S1
公开(公告)日：2013-09-03
申请号：US29413516
申请日：2012-02-16
申请人： Sung-Hwan Kim
设计人： Sung-Hwan Kim

5. 发明申请

US20130224090A1 CATALYST FOR SELECTIVE OXIDATION OF NH3 TO N2 AND METHOD FOR PREPARING THE SAME 有权
标题翻译：用于选择性氧化NH 3至N 2的催化剂及其制备方法
公开(公告)号：US20130224090A1
公开(公告)日：2013-08-29
申请号：US13510182
申请日：2010-11-19
申请人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
发明人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
IPC分类号： B01J29/04 , B01D53/94
CPC分类号： B01J29/04 , B01D53/9436 , B01D2255/1023 , B01D2255/2073 , B01D2255/20753 , B01D2255/2092 , B01J23/889 , Y10S502/52719
摘要： Disclosed is a catalyst which can convert ammonia contained in exhaust gas from an engine of a vehicle equipped with a Urea-SCR (Urea-Selective Catalytic Reduction) system, to nitrogen, and a method for preparating the same. The catalyst can convert ammonia which is failed to participate in a conversion reaction of NOx to N2 and slipped out of the SCR catalyst, to nitrogen via a SCO (Selective Catalytic Oxidation) reaction, before the ammonia is released to the air.
摘要翻译：公开了一种可以将装备有尿素SCR（尿素选择性催化还原）系统的车辆的发动机排出的废气中的氨转化成氮的催化剂及其制备方法。在将氨释放到空气之前，催化剂可以转化未参与NO x与N 2的转化反应并从SCR催化剂中滑出的氨，通过SCO（选择性催化氧化）反应转化为氮。

6. 发明授权

US08330898B2 Flexible liquid crystal display device 有权
标题翻译：柔性液晶显示装置
公开(公告)号：US08330898B2
公开(公告)日：2012-12-11
申请号：US12559857
申请日：2009-09-15
申请人： Seung-han Paek , Sung-hwan Kim
发明人： Seung-han Paek , Sung-hwan Kim
IPC分类号： G02F1/1335 , G02F1/1333
CPC分类号： G02F1/133603 , G02F1/133305
摘要： A flexible liquid crystal display device includes a first flexible substrate having a display region and a non-display region at a periphery of the display region; an organic electroluminescent diode including a first electrode on the first flexible substrate, an organic emitting layer on the first electrode and a second electrode on the organic emitting layer, wherein each of the first electrode, the organic emitting layer and the second electrode covering an entire surface of the display region; a buffer layer on the organic electroluminescent diode; a gate line on the buffer layer; a data line over the buffer layer and crossing the gate line to define a pixel region at the display region; a thin film transistor connected to the gate and data lines; a pixel electrode connected to the thin film transistor; a second flexible substrate facing the first flexible substrate; a common electrode on the second flexible substrate; and a liquid crystal layer between the pixel and common electrodes.
摘要翻译：柔性液晶显示装置包括在显示区域的周围具有显示区域和非显示区域的第一柔性基板; 包括第一柔性基板上的第一电极，第一电极上的有机发光层和有机发光层上的第二电极的有机电致发光二极管，其中第一电极，有机发光层和第二电极中的每一个覆盖整个显示区域的表面; 有机电致发光二极管上的缓冲层; 缓冲层上的栅极线; 在缓冲层上方的数据线，并与栅极线交叉以在显示区域上限定像素区域; 连接到栅极和数据线的薄膜晶体管; 连接到薄膜晶体管的像素电极; 面向所述第一柔性基板的第二柔性基板; 第二柔性基板上的公共电极; 以及像素和公共电极之间的液晶层。

7. 发明授权

US08053832B2 Capacitor-less DRAM device 有权
标题翻译：无电容DRAM器件
公开(公告)号：US08053832B2
公开(公告)日：2011-11-08
申请号：US12603224
申请日：2009-10-21
申请人： Sung-hwan Kim , Yong-chul Oh
发明人： Sung-hwan Kim , Yong-chul Oh
IPC分类号： H01L27/12
CPC分类号： H01L27/108 , H01L27/10802 , H01L29/4236 , H01L29/66553 , H01L29/66621 , H01L29/66772 , H01L29/7841 , H01L29/78654
摘要： Provided is a capacitor-less DRAM device including: an insulating layer formed on a semiconductor substrate; a silicon layer formed on the insulating layer, wherein a trench is formed inside the silicon layer; and an offset spacer formed on both sidewalls of the trench and protruded upward through the silicon layer. A gate insulating layer is formed on a bottom of the trench, and a gate electrode is formed to be buried in the gate insulating layer and in the trench and the offset spacer. A source region and a drain region are formed in the silicon layer on both sides of the offset spacer so as not to overlap with the gate electrode. A channel region is formed in the silicon layer below the gate insulating layer to be self-aligned with the gate electrode.
摘要翻译：提供一种无电容器DRAM器件，包括：形成在半导体衬底上的绝缘层; 形成在所述绝缘层上的硅层，其中在所述硅层内形成沟槽; 以及形成在沟槽的两个侧壁上并通过硅层向上突出的偏移间隔物。栅极绝缘层形成在沟槽的底部，并且栅电极被形成为掩埋在栅极绝缘层以及沟槽和偏移间隔物中。源极区域和漏极区域形成在偏置间隔物两侧的硅层中，以便不与栅电极重叠。沟道区形成在栅绝缘层下方的硅层中，以与栅电极自对准。

8. 发明申请

US20110248376A1 Semiconductor Devices Having a Support Structure for an Active Layer Pattern and Methods of Forming the Same 有权
标题翻译：具有活性层图案的支撑结构的半导体器件及其形成方法
公开(公告)号：US20110248376A1
公开(公告)日：2011-10-13
申请号：US13166867
申请日：2011-06-23
申请人： Chang-woo Oh , Dong-gun Park , Dong-won Kim , Ming Li , Sung-hwan Kim
发明人： Chang-woo Oh , Dong-gun Park , Dong-won Kim , Ming Li , Sung-hwan Kim
IPC分类号： H01L29/06
CPC分类号： H01L29/66833 , H01L21/76224 , H01L21/84 , H01L27/12 , H01L29/66795 , H01L29/785
摘要： Semiconductor devices include a semiconductor substrate with a stack structure protruding from the semiconductor substrate and surrounded by an isolation structure. The stack structure includes an active layer pattern and a gap-filling insulation layer between the semiconductor substrate and the active layer pattern. A gate electrode extends from the isolation structure around the stack structure. The gate electrode is configured to provide a support structure for the active layer pattern. The gate electrode may be a gate electrode of a silicon on insulator (SOI) device formed on the semiconductor wafer and the semiconductor device may further include a bulk silicon device formed on the semiconductor substrate in a region of the semiconductor substrate not including the gap-filing insulation layer.
摘要翻译：半导体器件包括具有从半导体衬底突出并被隔离结构包围的堆叠结构的半导体衬底。堆叠结构包括半导体衬底和有源层图案之间的有源层图案和间隙填充绝缘层。栅电极围绕堆叠结构从隔离结构延伸。栅电极被配置为提供用于有源层图案的支撑结构。栅电极可以是形成在半导体晶片上的绝缘体上硅（SOI）器件的栅电极，并且半导体器件还可以包括在半导体衬底的形成在半导体衬底上的体积硅器件，保护层。

9. 发明申请

US20100330761A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100330761A1
公开(公告)日：2010-12-30
申请号：US12879308
申请日：2010-09-10
申请人： Chang-Woo Oh , Sung-Hwan Kim , Dong-Gun Park
发明人： Chang-Woo Oh , Sung-Hwan Kim , Dong-Gun Park
IPC分类号： H01L21/336 , H01L21/326
CPC分类号： H01L27/11568 , G11C16/0475 , H01L27/105 , H01L27/1052 , H01L27/115 , H01L27/11573
摘要： Exposed are a semiconductor device and method of fabricating the same. The device includes an insulation film that is disposed between an active pattern and a substrate, which provides various improvements. This structure enhances the efficiency of high integration and offers an advanced structure for semiconductor devices.
摘要翻译：露出的是半导体器件及其制造方法。该装置包括设置在活性图案和基底之间的绝缘膜，其提供各种改进。这种结构提高了高集成度的效率，为半导体器件提供了先进的结构。

10. 发明授权

US07816228B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07816228B2
公开(公告)日：2010-10-19
申请号：US11772341
申请日：2007-07-02
申请人： Sung-Hwan Kim , Chang-Woo Oh , Yong-Lack Choi , Na-Young Kim
发明人： Sung-Hwan Kim , Chang-Woo Oh , Yong-Lack Choi , Na-Young Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/3081 , H01L21/76224 , H01L21/823456 , H01L21/823481 , H01L27/11573 , H01L29/66795 , H01L29/785
摘要： In a method of manufacturing a semiconductor device including a planar type transistor and a fin type transistor, a substrate having a first region and a second region is partially to form an isolation trench defining an isolation region and an active region. An insulation layer liner is formed on sidewalls of the isolation trench in the first region and the second region. An isolation layer fills an inner portion of the isolation trench. The insulation layer liner is partially removed to expose an upper surface of the substrate in the gate region of the first region, and an upper surface and sidewalls of the substrate in the gate region of the second region. A gate oxide layer and a gate electrode are formed on the exposed substrate.
摘要翻译：在制造包括平面型晶体管和鳍式晶体管的半导体器件的方法中，具有第一区域和第二区域的衬底部分地形成限定隔离区域和有源区域的隔离沟槽。绝缘层衬垫形成在第一区域和第二区域中的隔离沟槽的侧壁上。隔离层填充隔离沟槽的内部。部分去除绝缘层衬垫以暴露第一区域的栅极区域中的衬底的上表面，以及在第二区域的栅极区域中的衬底的上表面和侧壁。在暴露的基板上形成栅氧化层和栅电极。

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