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    • 7. 发明申请
    • ENERGY STORAGE SYSTEM
    • 能源储存系统
    • US20150184679A1
    • 2015-07-02
    • US14572995
    • 2014-12-17
    • STEVEN THOMAS IVYGUY C. EASTWOOD
    • STEVEN THOMAS IVYGUY C. EASTWOOD
    • F15B1/02B65G5/00F15B1/027
    • F15B1/024B65G5/00F03G3/00F15B1/027
    • Energy can be stored by directing fluid into an expandable receptacle that has a relatively heavy mass above it. The fluid fills the receptacle such that it expands and lifts up the heavy mass above it. At a time when energy is needed, the fluid can be allowed to flow out of the receptacle and through a turbine or hydraulic motor to generate power or electricity. Intermittent or unreliable sources of power can be used to fill the receptacle, or power from a power grid can be used to fill the receptacle at times that are off-peak. During peak-load times, the potential energy of the fluid in the receptacle can be converted to power. The receptacle can also be used to control water flows and can provide a source of power and potable water to a community.
    • 能量可以通过将流体引导到在其上方具有相对较重质量的可膨胀容器中来储存。 流体填充容器,使得其膨胀并提升其上方的重质物质。 在需要能量的时候,可以允许流体从容器流出并通过涡轮机或液压马达以产生动力或电力。 可以使用间歇或不可靠的电源来填充插座,或者可以使用来自电网的电力在非高峰期的时间填充插座。 在峰值加载时间期间,容器中的流体的势能可以转换为功率。 容器还可用于控制水流,并可向社区提供电源和饮用水源。
    • 8. 发明授权
    • Integrated diode assemblies for photovoltaic modules
    • 用于光伏组件的集成二极管组件
    • US09059351B2
    • 2015-06-16
    • US13204552
    • 2011-08-05
    • Steven Thomas CroftOsman GhandourWhitfield Gardner Halstead
    • Steven Thomas CroftOsman GhandourWhitfield Gardner Halstead
    • H01L31/042H01L31/05
    • H01L31/044H01L31/0201H01L31/042H01L31/0504H01L31/0508H01L31/18Y02E10/542Y02P70/521Y10T29/4913
    • Provided are bypass diode assemblies for use in photovoltaic modules. Also provided are methods of fabricating such assemblies and a method of fabricating photovoltaic modules using such assemblies. A diode assembly may include an insulating strip, at least one lead-diode assembly having a diode and two leads, and at least two interconnecting conductors overlapping with and electrically contacting the leads of the lead-diode assembly. The insulating strip supports the lead-diode assembly and conductors and at least partially insulates these components from photovoltaic cells. Specifically, during module fabrication, the interconnecting conductors make electrical connections to the back sides of the cells through cutouts in the insulating strip. The electrical connections may be made to every cell in a row or a subset of selected cells in that row. In certain embodiments, the same interconnecting conductor is connected to two or more cells positioned in adjacent rows.
    • 提供用于光伏模块的旁路二极管组件。 还提供了制造这种组件的方法和使用这种组件制造光伏模块的方法。 二极管组件可以包括绝缘条,具有二极管和两个引线的至少一个引线二极管组件,以及与引线二极管组件的引线重叠并与其电接触的至少两个互连导体。 绝缘带支撑引线二极管组件和导体,并且至少部分地使这些部件与光伏电池绝缘。 具体来说,在模块制造期间,互连导体通过绝缘条中的切口使电连接到电池的背面。 可以对该行中所选单元的一行或一个子集中的每个单元进行电连接。 在某些实施例中,相同的互连导体连接到位于相邻行中的两个或多个单元。
    • 9. 发明授权
    • Trench-gate semiconductor device
    • 沟槽栅半导体器件
    • US08901638B2
    • 2014-12-02
    • US13055742
    • 2009-07-27
    • Steven Thomas PeakePhil Rutter
    • Steven Thomas PeakePhil Rutter
    • H01L29/66
    • H01L29/7813H01L29/0878H01L29/1095H01L29/407H01L29/42368H01L29/7397
    • A trench-gate semiconductor device is disclosed, in which the player (10,6) which forms the body region (in a n-channel device) extends adjacent the trench (4) deeper into the device, to lie adjacent a lower trench electrode (3b, 3c). Since the p-layer extension (6) forms part of the channel, it must be very low doped, in order not to increase unduly the channel resistance in the on-state. The replacement of some of the out-diffusion resistance in the drift region by the (smaller) channel resistance results in a lower over-all Rdson. In the off-state, the p-layer forms, together with the underlying n-drift layer, a non-abrupt function, so that the depletion region in the off-state extends closer to the top surface (2) than for a conventional RSO trench-MOS, being split between the p- and n-layers, rather than all being in the n-drift region. The invention does not require a RESURF device structure, so has wide process windows, since the dopant levels and layer thicknesses do not have to be controlled to provide charge balancing.
    • 公开了一种沟槽栅半导体器件,其中形成身体区域(在n沟道器件中)的游戏者(10,6)在沟槽(4)附近延伸到设备中更深处以邻近下沟槽电极 (3b,3c)。 由于p层延伸部(6)形成沟道的一部分,所以必须是非常低的掺杂,以便不导致导通状态下的沟道电阻过度增加。 通过(较小的)通道电阻来替代漂移区域中的一些外扩散电阻导致较低的全部Rdson。 在关闭状态下,p层与下面的n漂移层一起形成非突然的功能,使得截止状态下的耗尽区域比常规的更靠近顶表面(2)延伸。 RSO沟槽MOS,分为p层和n层之间,而不是全部在n漂移区域中。 本发明不需要RESURF器件结构,因此具有宽的工艺窗口,因为不必控制掺杂剂水平和层厚度以提供电荷平衡。