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    • 8. 发明授权
    • Polycrystalline semiconductor processing
    • 多晶半导体加工
    • US4379020A
    • 1983-04-05
    • US311850
    • 1981-10-16
    • Andreas M. GlaeserJohn S. HaggertyStephen C. Danforth
    • Andreas M. GlaeserJohn S. HaggertyStephen C. Danforth
    • C30B1/02C30B1/10
    • C30B1/023
    • A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film.A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.
    • 从用于光伏器件的非晶膜形成大晶粒多晶膜的方法。 该过程在非晶膜上操作,并且使用从非晶状态转变为结晶态的固有的驱动力作为驱动晶粒生长过程的力。 得到的多晶膜的特征在于大于膜的厚度的晶粒尺寸。 薄的非晶膜沉积在基底上。 在非晶膜中以预定的间隔位置诱导多个结晶胚的形成,并且成膜被膜中的其它部分抑制。 使晶体胚在非晶膜中生长,而不会在膜中发生进一步的成核,直到胚胎的生长通过在相邻生长的胚胎上的粘附而停止。 该方法适用于批量和连续加工技术。 在任一种工艺中,薄的非晶膜依次掺杂有p型和n型掺杂剂。 在非晶膜中的结晶胚的形成和生长之前或之后或在连续进行的结晶步骤期间进行掺杂。