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    • 2. 发明授权
    • System, apparatus and method for emittance control and suppressing stray light
    • 用于发射控制和抑制杂散光的系统,装置和方法
    • US08976362B2
    • 2015-03-10
    • US13570100
    • 2012-08-08
    • John G. HagopianStephanie A. GettyManuel A. Quijada
    • John G. HagopianStephanie A. GettyManuel A. Quijada
    • G01N21/47
    • C23C16/26B82Y30/00B82Y40/00C23C16/0281G01N2201/0642
    • A system, apparatus and method employing carbon nanotubes on substrates such as silicon, titanium, copper, stainless steel and other substrates, where the carbon nanotubes are blacker than existing paints and coatings, thereby providing an exponential increase in stray light suppression depending on the number of bounces of such treated surfaces. Additionally, the present invention is directed to techniques to better absorb and radiate unwanted energies. Further, the alternate substrates offer strength of material for numerous components and in numerous physical applications. The present invention is also directed to techniques for improving the adhesion of the nanotubes to the alternate substrate materials and also extending the wavelength of operation from the near ultraviolet to the far infrared portion of the spectrum (0.2 microns to 120 microns wavelength).
    • 在诸如硅,钛,铜,不锈钢和其他基底的基底上使用碳纳米管的系统,设备和方法,其中碳纳米管比现有的涂料和涂层更黑,从而根据数量提供杂散光抑制的指数增加 的这种处理表面的反弹。 另外,本发明涉及更好地吸收和辐射不需要的能量的技术。 此外,替代的基板提供了许多部件和许多物理应用中的材料的强度。 本发明还涉及用于改善纳米管与替代的基底材料的粘合性并且还将波长的波长从光谱的近紫外到远红外部分延伸(0.2微米到120微米波长)的技术。
    • 8. 发明申请
    • NANOWIRE DEVICE AND METHOD OF MAKING A NANOWIRE DEVICE
    • 纳米器件和制造纳米器件的方法
    • US20090078929A1
    • 2009-03-26
    • US11861457
    • 2007-09-26
    • Stephanie A. Getty
    • Stephanie A. Getty
    • H01L29/06H01L21/311
    • H01L29/0665B82Y10/00H01L29/0673H01L29/78696
    • A method of making nanowires includes providing a silicon substrate having a silicon dioxide insulation on the surface thereof. The silicon dioxide is etched to form one or more pillars, each having a plurality of sidewalls. A thin film of gold is deposited on a sidewall and is subjected to an annealing process. The annealing process causes the gold film to form a globular catalyst particle. The structure is placed in an LPCVD furnace into which is introduced silane gas. Silicon from the gas migrates through the catalyst particle and grows a nanowire from the sidewall of the pillar to a desired length. Electrical contacts are provided at each end of the nanowire to create an active component useable in an electronic circuit.
    • 制造纳米线的方法包括在其表面上提供具有二氧化硅绝缘体的硅衬底。 蚀刻二氧化硅以形成一个或多个柱,每个柱具有多个侧壁。 金的薄膜沉积在侧壁上并进行退火处理。 退火过程使金膜形成球形催化剂颗粒。 将该结构放置在其中引入硅烷气体的LPCVD炉中。 来自气体的硅迁移通过催化剂颗粒,并将纳米线从柱的侧壁生长至期望的长度。 电触头设置在纳米线的每一端,以产生可在电子电路中使用的有源元件。