专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090163695A1 Process for the preparation of bicyclic peptide compounds 有权
标题翻译：双环肽化合物的制备方法
公开(公告)号：US20090163695A1
公开(公告)日：2009-06-25
申请号：US10537731
申请日：2003-12-04
申请人： Aldo Salimbeni , Davide Poma , Damiano Turozzi , Stefano Manzini , Carlo Alberto Maggi
发明人： Aldo Salimbeni , Davide Poma , Damiano Turozzi , Stefano Manzini , Carlo Alberto Maggi
IPC分类号： C07K7/56
CPC分类号： C07K7/56 , C07K7/22
摘要： The present invention relates to a new process carried out entirely in solution, for the preparation in high yields of high purity bicyclic peptide compounds of formula (I), useful as intermediates for preparing compounds with pharmacological activity.
摘要翻译：本发明涉及完全用溶液进行的新方法，用于制备高产量的式（I）的高纯度双环肽化合物，其可用作制备具有药理活性的化合物的中间体。

2. 发明授权

US08975723B2 Integrated device incorporating low-voltage components and power components, and process for manufacturing such device 有权
标题翻译：集成器件结合了低压元件和功率元件，以及制造这种器件的工艺
公开(公告)号：US08975723B2
公开(公告)日：2015-03-10
申请号：US12839989
申请日：2010-07-20
申请人： Riccardo Depetro , Stefano Manzini
发明人： Riccardo Depetro , Stefano Manzini
IPC分类号： H01L21/31 , H01L21/8238 , H01L29/417 , H01L21/762 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/78
CPC分类号： H01L21/823878 , H01L21/265 , H01L21/31111 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/82385 , H01L21/823857 , H01L29/0653 , H01L29/0657 , H01L29/0865 , H01L29/0882 , H01L29/41766 , H01L29/42368 , H01L29/66696 , H01L29/66704 , H01L29/7816
摘要： An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first region of the semiconductor body; and a power component, in a second region of the semiconductor body. The power component has at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, coupled to the conduction region and traversing the STI structure in a direction perpendicular to the surface of the first portion of the semiconductor body.
摘要翻译：集成装置包括：具有从第一部分突出的第一凹陷部分和第二部分的半导体本体; STI结构，其延伸在半导体主体的第一部分上，其横向限定第二部分并且具有与第一部分的表面相邻的面; 低电压CMOS部件，容纳在第二部分中，位于半导体本体的第一区域中; 以及功率分量，在所述半导体本体的第二区域中。功率部件具有形成在半导体本体的第一部分中的至少一个导电区域和与导电区域耦合并且在垂直于半导体主体的第一部分的表面的方向上横穿STI结构的导电触点。

3. 发明申请

US20110018068A1 INTEGRATED DEVICE INCORPORATING LOW-VOLTAGE COMPONENTS AND POWER COMPONENTS, AND PROCESS FOR MANUFACTURING SUCH DEVICE 有权
标题翻译：包含低电压组件和电源组件的集成设备以及制造这种设备的过程
公开(公告)号：US20110018068A1
公开(公告)日：2011-01-27
申请号：US12839989
申请日：2010-07-20
申请人： Riccardo DEPETRO , Stefano MANZINI
发明人： Riccardo DEPETRO , Stefano MANZINI
IPC分类号： H01L27/092 , H01L21/8238 , H01L27/088 , H01L21/8234
CPC分类号： H01L21/823878 , H01L21/265 , H01L21/31111 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/82385 , H01L21/823857 , H01L29/0653 , H01L29/0657 , H01L29/0865 , H01L29/0882 , H01L29/41766 , H01L29/42368 , H01L29/66696 , H01L29/66704 , H01L29/7816
摘要： An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first region of the semiconductor body; and a power component, in a second region of the semiconductor body. The power component has at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, connected to the conduction region and traversing the STI structure in a direction perpendicular to the surface of the first portion of the semiconductor body.
摘要翻译：集成装置包括：具有从第一部分突出的第一凹陷部分和第二部分的半导体本体; STI结构，其延伸在半导体主体的第一部分上，其横向限定第二部分并且具有与第一部分的表面相邻的面; 低电压CMOS部件，容纳在第二部分中，位于半导体本体的第一区域中; 以及功率分量，在所述半导体本体的第二区域中。功率部件具有形成在半导体本体的第一部分中的至少一个导电区域和与导电区域连接并在垂直于半导体主体的第一部分的表面的方向上横穿STI结构的导电接触件。

4. 发明授权

US06587326B2 High-Q, variable capacitance capacitor 失效
标题翻译：高Q，可变电容电容
公开(公告)号：US06587326B2
公开(公告)日：2003-07-01
申请号：US10251630
申请日：2002-09-19
申请人： Riccardo Depetro , Stefano Manzini
发明人： Riccardo Depetro , Stefano Manzini
IPC分类号： H01G500
CPC分类号： H01L29/417 , H01L29/94
摘要： High-Q, variable capacitance capacitor is formed by including a pocket of semiconductor material; a field insulating layer, covering the pocket; an opening in the field insulating layer, delimiting a first active area; an access region formed in the active area and extending at a distance from a first edge of the active area and adjacent to a second edge of the active area. A portion of the pocket is positioned between the access region and the first edge and forms a first plate; an insulating region extends above the portion of said body, and a polysilicon region extends above the insulating region and forms a second plate. A portion of the polysilicon region extends above the field insulating layer, parallel to the access region; a plurality of contacts are formed at a mutual distance along the portion of the polysilicon region extending above the field insulating layer.
摘要翻译：高Q型可变容性电容器通过包括半导体材料的袋形成; 覆盖口袋的场绝缘层; 在所述场绝缘层中的开口，限定第一有源区; 存取区，形成在有源区中，并且与有源区的第一边缘相距一定距离并且与有源区的第二边相邻。口袋的一部分位于入口区域和第一边缘之间并形成第一板; 绝缘区域延伸到所述主体的部分上方，并且多晶硅区域延伸到绝缘区域上方并形成第二板。所述多晶硅区域的一部分在所述场绝缘层的上方延伸，与所述接入区域平行; 沿着在场绝缘层上方延伸的多晶硅区域的相互距离形成多个触点。

5. 发明授权

US5849795A Tachykinins antagonists 失效
标题翻译：速激肽拮抗剂
公开(公告)号：US5849795A
公开(公告)日：1998-12-15
申请号：US926103
申请日：1997-09-09
申请人： Alessandro Sisto , Edoardo Potier , Stefano Manzini , Christopher Fincham , Paolo Lombardi , Federico Arcamone
发明人： Alessandro Sisto , Edoardo Potier , Stefano Manzini , Christopher Fincham , Paolo Lombardi , Federico Arcamone
IPC分类号： C07D209/42 , A61K31/15 , C07C233/65
CPC分类号： C07D209/42
摘要： The present invention refers to tachykinins antagonists of general formula (I) ##STR1## their preparation and pharmaceutical compositions containing them.
摘要翻译：本发明涉及通式（I）的速激肽拮抗剂，其制备方法和含有它们的药物组合物。

6. 发明授权

US06864366B2 Process for the preparation of (e)-5-(2-bromovinyl)-2′-deoxyuridine 有权
标题翻译：制备（e）-5-（2-溴乙烯基）-2'-脱氧尿苷的方法
公开(公告)号：US06864366B2
公开(公告)日：2005-03-08
申请号：US10468901
申请日：2002-02-21
申请人： Aldo Salimbeni , Carlo Alberto Maggi , Stefano Manzini , Damiano Turozzi
发明人： Aldo Salimbeni , Carlo Alberto Maggi , Stefano Manzini , Damiano Turozzi
IPC分类号： C07H19/073 , C07B61/00 , C07H19/06 , A61K31/7072
CPC分类号： C07H19/06
摘要： Process of preparing (E)-5-(2-bromovynyl)-2′-deoxyuridine (Brivudine) characterized in that halogen-free solvent selected form esters or cyclic ethers are used in the bromination step of 5-ethyl-2′-deoxyuridine diacylate. The use of solvents is advantageous in respect of toxicity, discharge costs and environment protection.
摘要翻译：制备（E）-5-（2-溴乙炔基）-2'-脱氧尿苷（布里菌素）的方法，其特征在于在5-乙基-2'-脱氧尿苷的溴化步骤中使用选自酯或环醚的无卤素溶剂二酰化。使用溶剂在毒性，排放成本和环境保护方面是有利的。

7. 发明授权

US06400001B1 Varactor, in particular for radio-frequency transceivers 有权
标题翻译： Varactor，特别是射频收发器
公开(公告)号：US06400001B1
公开(公告)日：2002-06-04
申请号：US09493842
申请日：2000-01-28
申请人： Stefano Manzini , Pietro Erratico
发明人： Stefano Manzini , Pietro Erratico
IPC分类号： H01L2993
CPC分类号： H01L29/94
摘要： A varactor has a gate region, first and second biasing regions of N+ type embedded in a well, and first and second extraction regions of P+ type, forming a pair of PN junctions with the well. The PN junctions are inversely biased and extract charge accumulating in the well, below the gate region, when the gate region is biased to a lower voltage than a predetermined threshold value.
摘要翻译：变容二极管具有栅极区域，嵌入阱中的N +型的第一和第二偏置区域以及P +型的第一和第二提取区域，与阱形成一对PN结。当栅极区域被偏置到比预定阈值更低的电压时，PN结反向偏置并提取在阱中的阱下面积聚的电荷。

8. 发明授权

US5641802A Tachyquinine antagonists, their preparation and use in pharmaceutical formulations 失效
标题翻译：速效喹哪啶拮抗剂，它们的制备和在药物制剂中的应用
公开(公告)号：US5641802A
公开(公告)日：1997-06-24
申请号：US448460
申请日：1995-06-02
申请人： Federico Arcamone , Paolo Lombardi , Stefano Manzini , Edoardo Potier , Alessandro Sisto
发明人： Federico Arcamone , Paolo Lombardi , Stefano Manzini , Edoardo Potier , Alessandro Sisto
IPC分类号： C07C233/84 , C07C237/24 , C07D209/42 , A61K31/40 , C07D209/12
CPC分类号： C07C233/84 , C07C237/24 , C07D209/42 , C07C2101/14
摘要： A description is given of tachyquinine antagonists having general formula (I) ##STR1## their preparation and use in pharmaceutical formulations.
摘要翻译： PCT No.PCT / EP93 / 03387第 371日期：1995年6月2日 102（e）日期1995年6月2日PCT提交1993年12月2日PCT公布。公开号WO94 / 13694 日期1994年6月23日描述具有通式（I）的化合物拮抗剂（I）它们在药物制剂中的制备和用途。

9. 发明授权

US5610421A Integrated circuit with EPROM cells 失效
标题翻译：集成电路与EPROM单元
公开(公告)号：US5610421A
公开(公告)日：1997-03-11
申请号：US358152
申请日：1994-12-15
申请人： Claudio Contiero , Tiziana Cavioni , Stefano Manzini
发明人： Claudio Contiero , Tiziana Cavioni , Stefano Manzini
IPC分类号： H01L21/8247 , H01L27/06 , H01L27/092 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/105 , H01L27/0623 , H01L27/0922
摘要： An integrated circuit structure is disclosed wherein an EPROM cell has an active area formed by the same operations as are carried out to form a P region intended to contain an N-channel MOS transistor, source and drain regions formed by the same operations as are carried out to form the source and drain regions of said transistor, a control electrode consisting of an N+ region formed by the same operations as are carried out to form deep regions intended to contact buried N+ regions, and a floating gate electrode consisting of a layer of conductive material formed by the same operations as are carried out to form the gate electrodes of the MOS transistors in the integrated circuit.The EPROM cell can, therefore, be formed in a mixed integrated circuit with no need for purposely added processing steps.
摘要翻译：公开了一种集成电路结构，其中EPROM单元具有通过与用于形成用于包含N沟道MOS晶体管的P区域相同的操作而形成的有源区域，源极和漏极区域通过与所携带的相同的操作形成以形成所述晶体管的源极和漏极区域，由与进行相同操作形成的N +区域组成的控制电极以形成用于接触掩埋的N +区域的深区域，以及浮栅电极，其由导电材料通过与集成电路中的MOS晶体管的栅电极相同的操作形成。因此，可以在混合集成电路中形成EPROM单元，而不需要有意添加的处理步骤。

10. 发明授权

US07999068B2 Process for the preparation of bicyclic peptide compounds 有权
标题翻译：双环肽化合物的制备方法
公开(公告)号：US07999068B2
公开(公告)日：2011-08-16
申请号：US10537731
申请日：2003-12-04
申请人： Aldo Salimbeni , Davide Poma , Damiano Turozzi , Stefano Manzini , Carlo Alberto Maggi
发明人： Aldo Salimbeni , Davide Poma , Damiano Turozzi , Stefano Manzini , Carlo Alberto Maggi
IPC分类号： C07K7/56
CPC分类号： C07K7/56 , C07K7/22
摘要： A new process for the preparation of bicyclic peptide compounds Formula (I) in high yields of high purity, useful as intermediates for preparing compounds with pharmacological activity, is described.
摘要翻译：描述了用于制备具有高纯度的高产率的双环肽化合物式（I）的新方法，其可用作制备具有药理活性的化合物的中间体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式