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1. 发明授权

US06548850B1 Trench capacitor configuration and method of producing it 失效
标题翻译：沟槽电容器配置及其制造方法
公开(公告)号：US06548850B1
公开(公告)日：2003-04-15
申请号：US09677324
申请日：2000-09-29
申请人： Stefan Gernhard , Martin Schrems , Klaus-Dieter Morhard
发明人： Stefan Gernhard , Martin Schrems , Klaus-Dieter Morhard
IPC分类号： H01L27108
CPC分类号： H01L27/10867
摘要： A trench capacitor is formed in a substrate and includes a trench having an upper region and a lower region. An insulating collar is formed in the upper region of the trench. The lower region of the trench extends through a buried well. A buried plate is formed around the lower region of the trench as an outer capacitor electrode. A dielectric layer, which forms the capacitor dielectric, lines the lower region of the trench and the insulating collar. A conductive trench filling is put into the trench. A conductive contact layer of tungsten nitride is provided above the insulating collar, between the substrate and the conductive trench filling, and acts as a diffusion barrier. This makes it possible to provide the trench capacitor more closely to the transistor, since the transistor is not damaged by material which is contained in the conductive trench filling.
摘要翻译：沟槽电容器形成在衬底中并且包括具有上部区域和下部区域的沟槽。绝缘套环形成在沟槽的上部区域中。沟槽的下部区域延伸穿过埋置的井。作为外部电容器电极，在沟槽的下部区域周围形成掩埋板。形成电容器电介质的电介质层对沟槽的下部区域和绝缘环进行排列。将导电沟槽填充物放入沟槽中。氮化钨的导电接触层设置在绝缘套环的上方，衬底和导电沟槽填充之间，并充当扩散阻挡层。这使得可以将沟槽电容器更靠近晶体管，因为晶体管不被包含在导电沟槽填充物中的材料损坏。

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