会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of forming borderless contacts
    • 形成无边界接触的方法
    • US07901976B1
    • 2011-03-08
    • US11803474
    • 2007-05-15
    • Sriram ViswanathanVinay KrishnaPeter KeswickDaniel Amzen
    • Sriram ViswanathanVinay KrishnaPeter KeswickDaniel Amzen
    • H01L21/00
    • H01L21/76834H01L21/76897
    • A method is provided for forming a borderless contact to a local interconnect (LI) line on a substrate. Generally, the method includes steps of (i) depositing a nitride layer over a number of LI lines on the substrate, to substantially cover the LI lines; (ii) etching the nitride layer to form spacers adjacent to sidewalls of at least one of the number of LI lines and to expose at least a portion of a top surface of the LI line; (iii) depositing an inter-layer dielectric, such as an oxide, over the number of LI lines on the substrate and the spacers formed adjacent thereto; and (iv) performing a contact etch to etch contact openings through the inter-layer dielectric to expose the portion of the top surface of the underlying LI line. Other embodiments are also disclosed.
    • 提供了一种用于形成与衬底上的局部互连(LI)线的无边界接触的方法。 通常,该方法包括以下步骤:(i)在衬底上的多条LI线上沉积氮化物层,以基本覆盖LI线; (ii)蚀刻所述氮化物层以形成与所述多条L1线中的至少一个的侧壁相邻的间隔物,并且暴露所述LI线的顶表面的至少一部分; (iii)在衬底上的L1线的数量和与其相邻形成的间隔物上沉积诸如氧化物的层间电介质; 和(iv)进行接触蚀刻以蚀刻通过层间电介质的接触开口以暴露下面的LI线的顶表面的部分。 还公开了其他实施例。
    • 3. 发明授权
    • Process for post contact-etch clean
    • 后接触蚀刻清洁工艺
    • US08399360B1
    • 2013-03-19
    • US11599926
    • 2006-11-14
    • Sheri MillerVinay KrishnaSriram Viswanathan
    • Sheri MillerVinay KrishnaSriram Viswanathan
    • H01L21/302H01L21/4763
    • H01L21/02063H01L21/31138H01L21/76814
    • A method is provided for cleaning a semiconductor topography having one or more contact openings etched through a dielectric layer formed on a substrate. The method substantially eliminates unfilled contacts and reduces contact defects. Generally, the method involves: (i) heating the substrate in a processing chamber to a predetermined temperature; (ii) generating a plasma upstream of the process chamber using a microwave generator and a process gas comprising nitrogen and hydrogen or argon and helium; and (iii) introducing the plasma into the process chamber to clean the semiconductor topography. As the clean is accomplished substantially without the use of an organic solvent, galvanic corrosion of contacts subsequently formed in the contact openings is substantially eliminated. Other embodiments are also described.
    • 提供了一种用于清洁具有通过形成在基底上的介电层蚀刻的一个或多个接触开口的半导体形貌的方法。 该方法基本上消除了未填充的接触并减少接触缺陷。 通常,该方法包括:(i)将处理室中的衬底加热至预定温度; (ii)使用微波发生器和包括氮气和氢气或氩气和氦气的工艺气体在工艺室上游产生等离子体; 和(iii)将等离子体引入处理室以清洁半导体形貌。 由于在不使用有机溶剂的情况下基本上实现清洁,基本上消除了在接触开口中随后形成的触点的电偶腐蚀。 还描述了其它实施例。