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1. 发明申请

US20050269293A1 Seasoning method for etch chamber 审中-公开
标题翻译：蚀刻室调味方法
公开(公告)号：US20050269293A1
公开(公告)日：2005-12-08
申请号：US11141978
申请日：2005-05-31
申请人： Chen-Lung Fan , Kai-Chih Chang , Jih-Jse Lin , Jing-Kae Liou , Ta-Chin Chen , Srisuda Thitinun , Sok-Kiow Tan
发明人： Chen-Lung Fan , Kai-Chih Chang , Jih-Jse Lin , Jing-Kae Liou , Ta-Chin Chen , Srisuda Thitinun , Sok-Kiow Tan
IPC分类号： B44C1/22 , C23F1/00 , C23F4/00
CPC分类号： H01L21/32136 , C23F4/00
摘要： Disclosed is a seasoning method for an etch chamber for improving the passing rate, comprising the steps of: introducing a wafer or plural control wafers into the etch chamber; introducing reacting gases into the etch chamber; applying power to top and bottom electrodes of the etch chamber to plasmarize the reacting gases; and adjusting the gate valve of the etch chamber to 90 to 100% of the fully open position, thereby reducing the amount of by-products and eliminating the factors for reducing the passing rate. The seasoning method of this invention is based on a low pressure, high flow-rate sluicing mechanism, where the atmospheric flow and high vacuuming ability would remove the maximum amount of polymer particles and flaking from the etch chamber.
摘要翻译：公开了一种用于提高通过率的蚀刻室的调味方法，包括以下步骤：将晶片或多个控制晶片引入蚀刻室; 将反应气体引入蚀刻室; 将电力施加到蚀刻室的顶部和底部电极以使反应气体均质化; 并且将蚀刻室的闸阀调整到完全打开位置的90至100％，从而减少副产物的量并消除降低通过率的因素。本发明的调味方法是基于低压，高流速的洗涤机构，其中大气流量和高吸尘能力将去除最大量的聚合物颗粒和从蚀刻室剥落。

2. 发明授权

US07413992B2 Tungsten silicide etch process with reduced etch rate micro-loading 有权
标题翻译：硅化钨蚀刻工艺，降低蚀刻速率微加载
公开(公告)号：US07413992B2
公开(公告)日：2008-08-19
申请号：US11440163
申请日：2006-05-23
申请人： Sok Kiow Tan , Shenjian Liu , Harmeet Singh , Sam Do Lee , Linda Fung-Ming Lee
发明人： Sok Kiow Tan , Shenjian Liu , Harmeet Singh , Sam Do Lee , Linda Fung-Ming Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/28061 , H01L21/32137
摘要： The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.
摘要翻译：实施例提供了一种改进的硅化钨蚀刻工艺，具有降低的蚀刻速率微负载效应。在一个实施例中，提供了蚀刻形成在基板上的层的方法。该方法包括将衬底提供到等离子体处理室中，所述衬底具有形成在其上的金属硅化物层和限定在金属硅化物层上的图案化掩模。该方法还包括向等离子体处理室供应含氟气体，含氯气体，含氮气体和含氧气体的蚀刻气体混合物，其中含氮气体与含氟气体在约5至约15之间。此外，该方法包括使用所提供的蚀刻气体混合物在等离子体处理室中产生等离子体，以在未被图案化掩模覆盖的区域中蚀刻金属硅化物层，掩模，其限定致密区域和隔离区域，其中所产生的等离子体被配置为以降低的蚀刻速率微负载去除密集区域和隔离区域中的金属硅化物层。

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