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1. 发明授权

US07791022B2 Scanning electron microscope with length measurement function and dimension length measurement method 有权
标题翻译：扫描电子显微镜具有长度测量功能和尺寸长度测量方法
公开(公告)号：US07791022B2
公开(公告)日：2010-09-07
申请号：US11821028
申请日：2007-06-21
申请人： Takayuki Nakamura , Toshimichi Iwai , Soichi Shida , Mitsuo Hiroyama
发明人： Takayuki Nakamura , Toshimichi Iwai , Soichi Shida , Mitsuo Hiroyama
IPC分类号： H01J37/26
CPC分类号： G01B15/00 , H01J37/045 , H01J37/265 , H01J37/28 , H01J2237/004 , H01J2237/24585
摘要： A scanning electron microscope with a length measurement function includes an electron gun for emitting an electron beam, a measurement target region setting unit for setting a measurement region for a pattern formed on a sample, a storing unit for storing the designated measurement region, a beam blanker unit for controlling an irradiation of the electron beam depending on the measurement region, and a control unit for extracting the designated measurement region from the storing unit, interrupting the electron beam with the beam blanker unit in a region other than the measurement region, irradiating the electron beam onto the sample in the measurement region, capturing an image of the measurement region, and measuring the pattern. The measurement region may be a pair of regions having the same areas as each other.
摘要翻译：具有长度测量功能的扫描电子显微镜包括用于发射电子束的电子枪，用于设置在样品上形成的图案的测量区域的测量对象区域设置单元，用于存储指定测量区域的存储单元，用于根据测量区域控制电子束的照射的消除器单元，以及用于从存储单元提取指定的测量区域的控制单元，在除了测量区域之外的区域中用光束消除单元中断电子束，照射电子束在测量区域中的样品上，捕获测量区域的图像，并测量图案。测量区域可以是具有彼此相同面积的一对区域。

2. 发明授权

US5757198A Method and apparatus for detecting an IC defect using charged particle beam 失效
标题翻译：使用带电粒子束检测IC缺陷的方法和装置
公开(公告)号：US5757198A
公开(公告)日：1998-05-26
申请号：US641358
申请日：1996-04-30
申请人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
发明人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
IPC分类号： G01R31/28 , G01R31/307
CPC分类号： G01R31/307
摘要： Test patterns are applied to an IC under test under a test pattern address by which the first fail is caused and under other test pattern addresses. A defect candidate area is moved to the position where a charged particle beam can scan the area and defect candidate wiring portions are specified. A potential data of the specified wiring is acquired for each of the test patterns and stored in a memory. This process is performed by sequentially stepping back the stop test pattern addresses. Then, a potential data of the specified wiring in the specified area is similarly acquired for non-defect IC. The respective potential data of the IC under test and the non-defect IC are compared to locate the mismatch test pattern address and wiring.
摘要翻译：在测试模式地址下，测试模式被应用到测试模式地址，由此引起第一个故障，并在其他测试模式地址下。将缺陷候选区域移动到带电粒子束可以扫描该区域的位置，并且指定缺陷候选布线部分。针对每个测试图案获取指定布线的潜在数据并存储在存储器中。该过程通过顺序地退回停止测试模式地址来执行。然后，对于非缺陷IC，类似地获取指定区域中的指定布线的潜在数据。将待测IC和非缺陷IC的各自的潜在数据进行比较，以确定不匹配测试模式地址和布线。

3. 发明申请

US20130234020A1 PATTERN INSPECTION APPARATUS AND METHOD 有权
标题翻译：图案检查装置及方法
公开(公告)号：US20130234020A1
公开(公告)日：2013-09-12
申请号：US13616596
申请日：2012-09-14
申请人： Ryuichi Ogino , Soichi Shida , Yoshiaki Ogiso
发明人： Ryuichi Ogino , Soichi Shida , Yoshiaki Ogiso
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/222 , H01J2237/24578 , H01J2237/2826
摘要： A pattern inspection apparatus configured to perform pattern inspection based on a SEM image previously measures distortion amount data representing a magnitude distribution of positional displacement caused by distortion of the SEM image in a scanning direction. When the pattern inspection is performed, the apparatus makes design data and the SEM image correspond to each other by adjusting at least one of the design data and the SEM image on the basis of the distortion amount data, and places a measurement region on the SEM image on the basis of a correspondence between the design data and the SEM image. The apparatus may further find a matching rate between a pattern of the design data and a pattern of the SEM image.
摘要翻译：配置为基于SEM图像执行图案检查的图案检查装置预先测量表示由扫描方向上的SEM图像的变形引起的位移的幅度分布的失真量数据。当进行图案检查时，通过基于失真量数据调整设计数据和SEM图像中的至少一个，使设备数据和SEM图像彼此对应，并将测量区域放置在SEM 基于设计数据和SEM图像之间的对应关系图像。该装置还可以找到设计数据的图案和SEM图像的图案之间的匹配率。

4. 发明授权

US5821761A Apparatus detecting an IC defect by comparing electron emissions from two integrated circuits 失效
标题翻译：通过比较来自两个集成电路的电子发射来检测IC缺陷的装置
公开(公告)号：US5821761A
公开(公告)日：1998-10-13
申请号：US781836
申请日：1997-01-10
申请人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
发明人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
IPC分类号： G01R31/28 , G01R31/307
CPC分类号： G01R31/307
摘要： Test patterns are applied to an IC under test under a test pattern address by which the first fail is caused and under other test pattern addresses. A defect candidate area is moved to the position where a charged particle beam can scan the area and defect candidate wiring portions are specified. A potential data of the specified wiring is acquired for each of the test patterns and stored in a memory. This process is process performed by sequentially stepping back the stop test pattern addresses. Then, a potential data of the specified wiring in thee specified area is similarly acquired for non-defect IC. The respective potential data of the IC under test and the non-defect IC are compared to locate the mismatch test pattern address and wiring.
摘要翻译：在测试模式地址下，测试模式被应用到测试模式地址，由此引起第一个故障，并在其他测试模式地址下。将缺陷候选区域移动到带电粒子束可以扫描该区域的位置，并且指定缺陷候选布线部分。针对每个测试图案获取指定布线的潜在数据并存储在存储器中。该过程是通过顺序地退回停止测试模式地址来执行的。然后，对于非缺陷IC，类似地获取指定区域中的指定布线的电位数据。将待测IC和非缺陷IC的各自的潜在数据进行比较，以确定不匹配测试模式地址和布线。

5. 发明授权

US5592100A Method for detecting an IC defect using charged particle beam 失效
标题翻译：使用带电粒子束检测IC缺陷的方法
公开(公告)号：US5592100A
公开(公告)日：1997-01-07
申请号：US640439
申请日：1996-04-30
申请人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
发明人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
IPC分类号： G01R31/28 , G01R31/307
CPC分类号： G01R31/307
摘要： Test patterns are applied to an IC under test under a test pattern address by which the first fail is caused and under other test pattern addresses. A defect candidate area is moved to the position where a charged particle beam can scan the area and defect candidate wiring portions are specified. A potential data of the specified wiring is acquired for each of the test patterns and stored in a memory. This process is performed by sequentially stepping back the stop test pattern addresses. Then, a potential data of the specified wiring in the specified area is similarly acquired for non-defect IC. The respective potential data of the IC under test and the non-defect IC are compared to locate the mismatch test pattern address and wiring.
摘要翻译：在测试模式地址下，测试模式被应用到测试模式地址，由此引起第一个故障，并在其他测试模式地址下。将缺陷候选区域移动到带电粒子束可以扫描该区域的位置，并且指定缺陷候选布线部分。针对每个测试图案获取指定布线的潜在数据并存储在存储器中。该过程通过顺序地退回停止测试模式地址来执行。然后，对于非缺陷IC，类似地获取指定区域中的指定布线的潜在数据。将待测IC和非缺陷IC的各自的潜在数据进行比较，以确定不匹配测试模式地址和布线。

6. 发明授权

US08809778B2 Pattern inspection apparatus and method 有权
标题翻译：图案检验装置及方法
公开(公告)号：US08809778B2
公开(公告)日：2014-08-19
申请号：US13616596
申请日：2012-09-14
申请人： Ryuichi Ogino , Soichi Shida , Yoshiaki Ogiso
发明人： Ryuichi Ogino , Soichi Shida , Yoshiaki Ogiso
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/222 , H01J2237/24578 , H01J2237/2826
摘要： A pattern inspection apparatus configured to perform pattern inspection based on a SEM image previously measures distortion amount data representing a magnitude distribution of positional displacement caused by distortion of the SEM image in a scanning direction. When the pattern inspection is performed, the apparatus makes design data and the SEM image correspond to each other by adjusting at least one of the design data and the SEM image on the basis of the distortion amount data, and places a measurement region on the SEM image on the basis of a correspondence between the design data and the SEM image. The apparatus may further find a matching rate between a pattern of the design data and a pattern of the SEM image.
摘要翻译：配置为基于SEM图像执行图案检查的图案检查装置预先测量表示由扫描方向上的SEM图像的变形引起的位移的幅度分布的失真量数据。当进行图案检查时，通过基于失真量数据调整设计数据和SEM图像中的至少一个，使设备数据和SEM图像彼此对应，并将测量区域放置在SEM 基于设计数据和SEM图像之间的对应关系图像。该装置还可以找到设计数据的图案和SEM图像的图案之间的匹配率。

7. 发明申请

US20080224039A1 Scanning electron microscope with length measurement function and dimension length measurement method 有权
标题翻译：扫描电子显微镜具有长度测量功能和尺寸长度测量方法
公开(公告)号：US20080224039A1
公开(公告)日：2008-09-18
申请号：US11821028
申请日：2007-06-21
申请人： Takayuki Nakamura , Toshimichi Iwai , Soichi Shida , Mitsuo Hiroyama
发明人： Takayuki Nakamura , Toshimichi Iwai , Soichi Shida , Mitsuo Hiroyama
IPC分类号： G01N23/00
CPC分类号： G01B15/00 , H01J37/045 , H01J37/265 , H01J37/28 , H01J2237/004 , H01J2237/24585
摘要： A scanning electron microscope with a length measurement function includes an electron gun emitting an electron beam, a measurement target region setting unit for setting a measurement region for a pattern formed on a sample, a storing unit for storing the designated measurement region, a beam blanker unit for controlling an irradiation of the electron beam depending on the measurement region, and a control unit for extracting the designated measurement region from the storing unit, interrupting the electron beam with the beam blanker unit in a region other than the measurement region, irradiating the electron beam passed through the beam blanker unit onto the sample in the measurement region, capturing an image of the measurement region, and measuring the pattern. The measurement region may be represented by a pair of measurement regions, and the respective regions may have the same areas as each other.
摘要翻译：具有长度测量功能的扫描电子显微镜包括发射电子束的电子枪，用于设置样品上形成的图案的测量区域的测量对象区域设置单元，用于存储指定测量区域的存储单元，光束消除器用于根据测量区域控制电子束的照射的单元，以及用于从存储单元提取指定的测量区域的控制单元，在除了测量区域之外的区域中用光束消除单元中断电子束，照射电子束通过光束消隐单元通过测量区域中的样品，捕获测量区域的图像，并测量图案。测量区域可以由一对测量区域表示，并且各个区域可以具有彼此相同的面积。

8. 发明授权

US5521517A Method and apparatus for detecting an IC defect using a charged particle beam 失效
标题翻译：使用带电粒子束检测IC缺陷的方法和装置
公开(公告)号：US5521517A
公开(公告)日：1996-05-28
申请号：US500059
申请日：1995-07-10
申请人： Soichi Shida , Hironobu Niijima , Hiroshi Kawamoto
发明人： Soichi Shida , Hironobu Niijima , Hiroshi Kawamoto
IPC分类号： G01R31/302 , G01R31/307 , H01J37/26 , H01L21/66 , G01R31/26
CPC分类号： H01J37/268 , G01R31/307
摘要： The present invention allows to automatically presume a defect location of an IC using an EB tester. Under each of the conditions where a normal power supply voltage and an abnormal power supply voltage are applied to an IC respectively, test patterns are applied to the IC until the pattern address where the first defect is detected by an IC tester. At this point in time, the pattern update is stopped. Then a potential contrast image data is acquired from one of the partitioned segments of the IC surface for each of the above power supply conditions. A diffrence image data between the two potential contrast image data (normal power case and abnormal power case) is generated. This difference image data generation is repeated several times and those defference image data are summed up. A check is made to see if there is a changed portion greater than a predetermined value in each of the segments and if there is, a defect information is stored in a storage portion corresponding to the defect segment. The summed difference image data is acquired from each of all the segments of the IC and then the stop pattern address is decrementsd by one and the same process is repeated. Above process is repeated until no defect segment is detected by decrementing the number of test patterns. When only one segment having a defect is detected, the segment is considered as a real defect segment.
摘要翻译：本发明允许使用EB测试器自动设定IC的缺陷位置。在分别向IC施加正常电源电压和异常电源电压的每个条件下，将测试图案施加到IC，直到由IC测试仪检测到第一缺陷的图案地址。在这个时间点，模式更新被停止。然后，对于上述每个电源条件，从IC表面的一个分割段获取潜在的对比度图像数据。产生两个潜在对比度图像数据（正常功率情况和异常功率情况）之间的差异图像数据。将该差分图像数据生成重复多次，并将这些差异图像数据相加。检查每个段中是否存在大于预定值的改变部分，并且如果存在缺陷信息，则存储在与缺陷段对应的存储部分中。从IC的所有段中的每一个获取相加的差分图像数据，然后停止模式地址递减1并重复相同的处理。重复上述过程，直到通过递减测试图案的数量来检测到缺陷段。当仅检测到具有缺陷的一个段时，该段被认为是实际缺陷段。

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