专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09051172B2 Method for manufacturing a hermetically sealed structure 有权
标题翻译：密封结构的制造方法
公开(公告)号：US09051172B2
公开(公告)日：2015-06-09
申请号：US13639423
申请日：2011-04-15
申请人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen , Trond Westgaard
发明人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen , Trond Westgaard
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00269 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C2201/019 , B81C2201/0191 , B81C2203/0118 , B81C2203/031 , B81C2203/058
摘要： A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.
摘要翻译：一种用于在用于制造密封结构的硅绝缘体复合晶片内提供气密密封的方法，包括以下步骤：将第一硅晶片图案化成具有至少部分延伸穿过第一硅晶片的一个或多个凹槽; 用能够与硅阳极结合的绝缘体材料填充所述凹槽，以形成具有多个硅 - 绝缘体界面的第一复合晶片和由绝缘体材料组成的第一接触表面; 以及在所述第一接触表面和相对的第二接触表面上使用阳极接合技术以在所述硅 - 绝缘体界面之间形成气密密封，其中所述第二接触表面由硅组成。

2. 发明申请

US20130019680A1 MEMS STRUCTURE FOR AN ANGULAR RATE SENSOR 有权
公开(公告)号：US20130019680A1
公开(公告)日：2013-01-24
申请号：US13639376
申请日：2011-04-15
申请人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen
发明人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen
IPC分类号： G01C19/56
CPC分类号： G01C19/5712
摘要： A micro-electromechanical system (MEMS) structure for an angular rate sensor, the structure being positioned between first and second silicon-insulator composite wafers formed of a plurality of structured silicon parts, electrically isolated from each other by an insulator material, the structure comprising: a mono-crystalline silicon substrate structured to form a sensing system and a frame, the sensing system being completely de-coupled from and surrounded by the frame, which is positioned between engaging surfaces of the first and second composite wafers such that the sensing system is hermetically sealed within a cavity defined by the first and second composite wafers and the frame, the sensing system including: two seismic masses having front and back surfaces; two driving beams, each having a first end attached to a seismic mass and a second end attached to the first and second composite wafers by means of fixed pedestals provided on the silicon substrate; and a bending spring arranged to directly connect between, and synchronise a primary motion of, the two seismic masses, each of the seismic masses being arranged to have a first degree of rotational freedom about an axis that is substantially perpendicular to the plane of the silicon substrate, and the seismic masses and driving beams being arranged to have a second degree of rotational freedom about an axis substantially coincident with the longitudinal axis of the driving beams; means for generating and detecting the primary motion consisting of a primary oscillation of the two seismic masses, in opposing phases, in the first degree of rotational freedom; and means of detecting a secondary motion consisting of a secondary oscillation of the two seismic masses, in opposing phases, in the second degree of rotational freedom, the means of generating and detecting the primary motion and the means of detecting a secondary motion being provided on both the front and back surfaces of each of the first and second seismic masses, wherein the sensing system is arranged such that, when the device is subjected to an angular velocity around a third axis that is substantially in the plane of the silicon substrate and perpendicular to the longitudinal axis of the beams, a Coriolis force arises which causes the secondary oscillation of the seismic masses.

3. 发明申请

US20130146994A1 METHOD FOR MANUFACTURING A HERMETICALLY SEALED STRUCTURE 有权
标题翻译：制造密封密封结构的方法
公开(公告)号：US20130146994A1
公开(公告)日：2013-06-13
申请号：US13639423
申请日：2011-04-15
申请人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen , Trond Westgaard
发明人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen , Trond Westgaard
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00269 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C2201/019 , B81C2201/0191 , B81C2203/0118 , B81C2203/031 , B81C2203/058
摘要： A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.
摘要翻译：一种用于在用于制造密封结构的硅绝缘体复合晶片内提供气密密封的方法，包括以下步骤：将第一硅晶片图案化成具有至少部分延伸穿过第一硅晶片的一个或多个凹槽; 用能够与硅阳极结合的绝缘体材料填充所述凹槽，以形成具有多个硅 - 绝缘体界面的第一复合晶片和由绝缘体材料组成的第一接触表面; 以及在所述第一接触表面和相对的第二接触表面上使用阳极接合技术以在所述硅 - 绝缘体界面之间形成气密密封，其中所述第二接触表面由硅组成。

4. 发明授权

US09080870B2 MEMS structure for an angular rate sensor 有权
标题翻译：用于角速率传感器的MEMS结构
公开(公告)号：US09080870B2
公开(公告)日：2015-07-14
申请号：US13639376
申请日：2011-04-15
申请人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen
发明人： Gjermund Kittilsland , Daniel Lapadatu , Sissel Jacobsen
IPC分类号： G01C19/56 , G01C19/5712
CPC分类号： G01C19/5712
摘要： A micro-electromechanical system (MEMS) structure for an angular rate sensor includes seismic masses arranged to have a first degree of rotational freedom about an axis that is substantially perpendicular to the plane of a silicon substrate, and a second degree of rotational freedom about an axis substantially coincident with the longitudinal axis of driving beams to which the seismic masses are attached. A sensing system is arranged such that, when the structure is subjected to an angular velocity around a third axis that is substantially in the plane of the silicon substrate and perpendicular to the longitudinal axis of the beams, a Coriolis force arises which causes the secondary oscillation of the seismic masses.
摘要翻译：用于角速率传感器的微机电系统（MEMS）结构包括被布置为具有围绕基本上垂直于硅衬底的平面的轴线的第一旋转自由度的地震质量，以及关于硅衬底的第二旋转自由度基本上与地震质量块所附着的驱动梁的纵向轴线重合。感测系统被布置成使得当结构受到围绕基本上在硅衬底的平面中并且垂直于梁的纵向轴线的第三轴线的角速度时，产生导致次级振荡的科里奥利力的地震质量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式