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    • 1. 发明授权
    • Rectifier diode
    • 整流二极管
    • US6060776A
    • 2000-05-09
    • US091973
    • 1998-06-26
    • Richard SpitzSiegfried Schuler
    • Richard SpitzSiegfried Schuler
    • H01L23/28H01L23/049H01L23/24H01L23/48H01L23/492H01L29/861H01L23/02H01L23/04
    • H01L23/049H01L23/24H01L24/00H01L2924/12035H01L2924/351
    • A rectifier diode has a base which is press-fittable into an intended opening of a rectifier arrangement, a pedestal disposed on the base integrally with the base, a semiconductor chip secured to the pedestal, a head wire secured to the chip, the base being formed to connect the diode thermally and electrically to the rectifier arrangement, and a unit for mechanically stabilizing the base and including a bulwark provided on a bottom of the base in a region of the pedestal and surrounding the pedestal, the bulwark being separated from the pedestal by a trench and being integral with the bottom of the base, a pressing region for absorbing forces oriented at right angles to a plane of the semiconductor chip and disposed on a side of the bulwark remote from the trench and between bulwark and a substantially cylindrical wall of the base disposed substantially perpendicular to the bottom of the base, the trench being located between the bulwark and the pedestal and having a radial extent that is approximately twice as great as a height of the bulwark measured from the trench upward.
    • PCT No.PCT / DE96 / 02139 Sec。 371日期:1998年6月26日 102(e)日期1998年6月26日PCT 1996年11月9日PCT PCT。 公开号WO97 / 24762 日期1997年7月10日整流二极管具有可压配合到整流器装置的预定开口中的基座,与基座一体地设置在基座上的基座,固定到基座的半导体芯片,固定到基座的头线 所述基座形成为将所述二极管热电连接到所述整流器装置,以及用于机械稳定所述基座并且包括设置在所述基座的底部的所述基座的底部并围绕所述基座的舷墙的单元,所述舷墙 通过沟槽与基座隔开并与基座的底部成一体;压紧区域,用于吸收与半导体芯片的平面成直角定向的力并且设置在远离沟槽的舷墙侧和舷墙之间 以及基本上垂直于基部的底部设置的基部的基本上圆柱形的壁,所述沟槽位于舷墙和基座之间,并且具有 径向范围大约是从沟槽向上测量的舷墙的高度的两倍。