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1. 发明授权

US08795932B2 Method of fabricating a polarized color filter 有权
标题翻译：制造偏光滤色片的方法
公开(公告)号：US08795932B2
公开(公告)日：2014-08-05
申请号：US13531479
申请日：2012-06-22
申请人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang , Hung-Hsin Chen
发明人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang , Hung-Hsin Chen
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F7/203 , G03F1/00 , G03F7/0007
摘要： A method of fabricating a polarized color filter wherein a transparent substrate is provided and coated with a photoresist layer. A wave-shaped mask may then be prepared and a periodic wave-shaped surface may be placed in contact with the photoresist layer, treating the photoresist layer with a primary exposure process. An external force may be applied to the wave-shaped mask, and the transparent substrate or wave-shaped mask by be rotated by a predetermined degree. The photoresist layer may be treated with a secondary exposure process, wherein the photoresist layer is developed in order to obtain a photoresist pattern layer. A metal layer may be coated on the transparent substrate with the photoresist pattern layer. The photoresist pattern layer and the portion of the metal layer on the photoresist pattern layer may then be removed such that the remaining metal layer forms a periodic hole substrate.
摘要翻译：一种制造偏光滤色器的方法，其中提供透明基底并涂覆有光致抗蚀剂层。然后可以制备波形掩模，并且可以将周期性波形表面放置成与光致抗蚀剂层接触，用初始曝光工艺处理光致抗蚀剂层。可以向波形掩模施加外力，并且透明基板或波形掩模旋转预定的程度。可以用二次曝光工艺处理光致抗蚀剂层，其中显影光致抗蚀剂层以获得光致抗蚀剂图案层。金属层可以用光致抗蚀剂图案层涂覆在透明基板上。然后可以去除光致抗蚀剂图案层和光致抗蚀剂图案层上的金属层的部分，使得剩余的金属层形成周期性孔基底。

2. 发明授权

US08795928B2 Wave-shaped mask of fabricating nano-scaled structure 有权
标题翻译：制造纳米级结构的波形掩模
公开(公告)号：US08795928B2
公开(公告)日：2014-08-05
申请号：US13422921
申请日：2012-03-16
申请人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
发明人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
IPC分类号： G03F1/00 , G03F1/50 , G03F1/60
CPC分类号： G03F1/50 , G03F1/60
摘要： A wave-shaped mask for fabricating a nano-scale structure is disclosed. The wave-shaped mask comprises an elastomeric transparent substrate having an upper surface and a lower surface, and a light-penetrable thin film layer disposed on the upper surface of the elastomeric transparent substrate. The upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape, and the lower surface of the elastomeric transparent substrate is in a plate shape.
摘要翻译：公开了一种用于制造纳米级结构的波形掩模。波形掩模包括具有上表面和下表面的弹性透明基底和设置在弹性体透明基底的上表面上的可透光薄膜层。弹性体透明基板的上表面和透光薄膜层为周期波形，弹性透明基板的下表面为板状。

3. 发明申请

US20130244145A1 METHOD OF FABRICATING A POLARIZED COLOR FILTER 有权
标题翻译：制造偏光颜色过滤器的方法
公开(公告)号：US20130244145A1
公开(公告)日：2013-09-19
申请号：US13531479
申请日：2012-06-22
申请人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang , Hung-Hsin Chen
发明人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang , Hung-Hsin Chen
IPC分类号： G03F7/20 , B82Y40/00
CPC分类号： G03F7/203 , G03F1/00 , G03F7/0007
摘要： A method of fabricating a polarized color filter wherein a transparent substrate is provided and coated with a photoresist layer. A wave-shaped mask may then be prepared and a periodic wave-shaped surface may be placed in contact with the photoresist layer, treating the photoresist layer with a primary exposure process. An external force may be applied to the wave-shaped mask, and the transparent substrate or wave-shaped mask by be rotated by a predetermined degree. The photoresist layer may be treated with a secondary exposure process, wherein the photoresist layer is developed in order to obtain a photoresist pattern layer. A metal layer may be coated on the transparent substrate with the photoresist pattern layer. The photoresist pattern layer and the portion of the metal layer on the photoresist pattern layer may then be removed such that the remaining metal layer forms a periodic hole substrate.
摘要翻译：一种制造偏光滤色器的方法，其中提供透明基底并涂覆有光致抗蚀剂层。然后可以制备波形掩模，并且可以将周期性波形表面放置成与光致抗蚀剂层接触，用初始曝光工艺处理光致抗蚀剂层。可以向波形掩模施加外力，并且透明基板或波形掩模旋转预定的程度。可以用二次曝光工艺处理光致抗蚀剂层，其中显影光致抗蚀剂层以获得光致抗蚀剂图案层。金属层可以用光致抗蚀剂图案层涂覆在透明基板上。然后可以去除光致抗蚀剂图案层和光致抗蚀剂图案层上的金属层的部分，使得剩余的金属层形成周期性孔基底。

4. 发明授权

US07192818B1 Polysilicon thin film fabrication method 有权
标题翻译：多晶硅薄膜制造方法
公开(公告)号：US07192818B1
公开(公告)日：2007-03-20
申请号：US11231854
申请日：2005-09-22
申请人： Si-Chen Lee , Chao-Yu Meng , Hsu-Yu Chang
发明人： Si-Chen Lee , Chao-Yu Meng , Hsu-Yu Chang
IPC分类号： H01L21/00 , H01L21/336 , H01L21/20
CPC分类号： H01L21/02667 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/04
摘要： A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.
摘要翻译：提供了一种多晶硅薄膜制造方法，其中使用热吸收层为非晶硅薄膜的晶粒生长提供足够的热量，并且使用绝缘层来隔离吸热层和非晶硅薄膜电影。使用规则的导热层作为冷却源来控制非晶硅薄膜的结晶位置和晶粒尺寸。因此，非晶硅薄膜可以结晶成均匀的多晶硅薄膜，能够稳定地控制多晶硅薄膜的电特性。

5. 发明授权

US06375737B2 Method of self-assembly silicon quantum dots 有权
标题翻译：自组装硅量子点的方法
公开(公告)号：US06375737B2
公开(公告)日：2002-04-23
申请号：US09827582
申请日：2001-04-05
申请人： An Shih , Chao-Yu Meng , Si-Chen Lee
发明人： An Shih , Chao-Yu Meng , Si-Chen Lee
IPC分类号： C30B2502
CPC分类号： H01L21/02601 , B82Y10/00 , B82Y30/00 , H01L21/02532 , H01L21/0262 , H01L21/02686 , H01L21/2026 , H01L29/127 , H01L33/0054 , H01L33/06
摘要： A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an annealing process, wherein the excimer laser emits light on the thin amorphous Si film.
摘要翻译：自组装硅量子点的方法包括以下步骤：通过控制退火工艺期间准分子激光器的能量和拍摄数量来提供衬底，形成薄的非晶Si膜，以及形成多个Si量子点，其中准分子激光器在薄的非晶Si膜上发光。

6. 发明申请

US20130065161A1 WAVE-SHAPED MASK OF FABRICATING NANO-SCALED STRUCTURE 有权
标题翻译：制作纳米结构的波形掩模
公开(公告)号：US20130065161A1
公开(公告)日：2013-03-14
申请号：US13422921
申请日：2012-03-16
申请人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
发明人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
IPC分类号： G03F1/38
CPC分类号： G03F1/50 , G03F1/60
摘要： A wave-shaped mask for fabricating a nano-scale structure is disclosed. The wave-shaped mask comprises an elastomeric transparent substrate having an upper surface and a lower surface, and a light-penetrable thin film layer disposed on the upper surface of the elastomeric transparent substrate. The upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape, and the lower surface of the elastomeric transparent substrate is in a plate shape.
摘要翻译：公开了一种用于制造纳米级结构的波形掩模。波形掩模包括具有上表面和下表面的弹性透明基底和设置在弹性体透明基底的上表面上的可透光薄膜层。弹性体透明基板的上表面和透光薄膜层为周期波形，弹性透明基板的下表面为板状。

7. 发明授权

US5717201A Double four-quadrant angle-position detector 失效
标题翻译：双四象限角位置检测器
公开(公告)号：US5717201A
公开(公告)日：1998-02-10
申请号：US634210
申请日：1996-04-18
申请人： Kang-Chen Lin , Si-Chen Lee
发明人： Kang-Chen Lin , Si-Chen Lee
IPC分类号： H01L31/02 , H01J40/14
CPC分类号： H01L31/02024
摘要： A double four-quadrant angle position detector is disclosed. The angle position detector comprises a first orientation detector, a second orientation detector, and a detecting means. The first orientation detector is composed of two pairs of photo-detecting means, arranged on opposite sides along vertical and horizontal directions, respectively, to generate output currents according to the brightness level. Similarly, the second orientation detector can also generate output currents according to brightness level. The detecting means determines a first angle and a second angle according to these output currents and then compares the difference of the first angle and the second angle with a preset threshold. When the difference is greater than the preset threshold, it indicates that an image angle is passing through the sensor.
摘要翻译：公开了一种双重四象限角位置检测器。角度位置检测器包括第一取向检测器，第二取向检测器和检测装置。第一取向检测器由分别沿垂直和水平方向布置在相对侧上的两对光检测装置组成，以根据亮度级产生输出电流。类似地，第二取向检测器也可以根据亮度级产生输出电流。检测装置根据这些输出电流确定第一角度和第二角度，然后将第一角度和第二角度的差值与预设阈值进行比较。当差值大于预设阈值时，表示图像角度通过传感器。

8. 发明授权

US5506006A Process for depositing silicon dioxide by liquid phase diposition 失效
标题翻译：通过液相沉积沉积二氧化硅的方法
公开(公告)号：US5506006A
公开(公告)日：1996-04-09
申请号：US456425
申请日：1995-06-01
申请人： Jeng-Shiuh Chou , Si-Chen Lee
发明人： Jeng-Shiuh Chou , Si-Chen Lee
IPC分类号： H01L21/316 , B05D1/18
CPC分类号： H01L21/316
摘要： A process for depositing a silicon dioxide (SiO.sub.2) film on a substrate by liquid phase deposition is developed. Silicic acid is used instead of SiO.sub.2 powder to saturate hydrofluorosilicic acid so as to shorten the period required for preparing the solution to 3 hours. Water is used to supersaturate the solution. The corresponding deposition rate of SiO.sub.2 is about 50 nm per hour.
摘要翻译：开发了通过液相沉积在基底上沉积二氧化硅（SiO 2）膜的方法。使用硅酸代替SiO 2粉末以使氢氟硅酸饱和，从而将制备溶液所需的时间缩短至3小时。水用于过饱和溶液。 SiO 2的相应沉积速率为每小时约50nm。

9. 发明授权

US09346196B2 Method for manufacturing flexible substrate with surface structure copying from a template 有权
标题翻译：从模板制造表面结构复制的柔性基板的方法
公开(公告)号：US09346196B2
公开(公告)日：2016-05-24
申请号：US13481857
申请日：2012-05-27
申请人： Si-Chen Lee , Chieh-Hung Yang , Chun-Yuan Hsueh
发明人： Si-Chen Lee , Chieh-Hung Yang , Chun-Yuan Hsueh
IPC分类号： B29C41/00 , B29C41/36 , B29C33/42 , B29C41/38
CPC分类号： B29C41/36 , B29C33/424 , B29C41/38 , Y10T428/24479
摘要： Disclosed herein are a flexible substrate with surface structure and a method for manufacturing the flexible substrate. The disclosure relates to a low-cost process to manufacturing the flexible substrate that is adapted to the large-area mass production. According to one of the embodiments in the disclosure, the method introduces a mold with surface structure. An isolation material is formed on the mold surface in an earlier stage. Upon the isolation layer, a flexible substrate material is coated. After that, a baking step is employed to cure the flexible substrate material. The flexible substrate with surface structure is therefore formed after de-molding the cured substrate. Another aspect to the disclosure adopts the above-formed substrate to be a base substrate. A second flexible substrate with the surface structure identical to the mold is then formed by performing the above steps.
摘要翻译：本文公开了具有表面结构的柔性基板和用于制造柔性基板的方法。本公开涉及适于大面积批量生产的制造柔性基板的低成本方法。根据本公开的一个实施例，该方法引入具有表面结构的模具。在早期阶段，在模具表面上形成隔离材料。在隔离层上涂覆柔性基材。之后，使用烘烤步骤来固化柔性基材。因此，具有表面结构的柔性基板在脱模固化的基板之后形成。本公开的另一方面采用上述形成的基底作为基底。然后通过执行上述步骤形成具有与模具相同的表面结构的第二柔性基板。

10. 发明授权

US08748061B2 Method of fabricating wave-shaped mask for photolithography and exposure method of fabricating nano-scaled structure using the wave-shaped mask 有权
标题翻译：用于光刻的波形掩模的制造方法以及使用波形掩模制造纳米级结构的曝光方法
公开(公告)号：US08748061B2
公开(公告)日：2014-06-10
申请号：US13424119
申请日：2012-03-19
申请人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
发明人： Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G03F1/60
摘要： A method of fabricating wave-shaped mask is disclosed. The method of fabricating wave-shaped mask comprises the steps of providing an elastomeric transparent substrate comprising an upper surface and a lower surface, applying a stable force to the elastomeric transparent substrate for deforming the elastomeric transparent substrate, forming a light-penetrable thin film layer on the upper surface of the elastomeric transparent substrate, and removing the force applying to the elastomeric transparent substrate, whereby the upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape and the lower surface of the elastomeric transparent substrate is in a plate shape.
摘要翻译：公开了制造波形掩模的方法。制造波形掩模的方法包括以下步骤：提供包括上表面和下表面的弹性体透明基底，向弹性体透明基底施加稳定的力，以使弹性体透明基底变形，形成可透光的薄膜层在弹性体透明基材的上表面上，并且去除施加到弹性体透明基材上的力，由此弹性体透明基材的上表面和可透光薄膜层是周期波形，弹性体透明基材为板状。

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