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1. 发明授权

US06300252B1 Method for etching fuse windows in IC devices and devices made 有权
标题翻译：在IC器件和器件中刻蚀熔丝窗的方法
公开(公告)号：US06300252B1
公开(公告)日：2001-10-09
申请号：US09410792
申请日：1999-10-01
申请人： Shulan Ying , Shu-Chi Hung
发明人： Shulan Ying , Shu-Chi Hung
IPC分类号： H01L2100
CPC分类号： H01L21/76802 , H01L21/31116 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for etching fuse windows through a passivation layer and at least two inter-metal dielectric layers that are deposited on top of a fuse when the fuse is embedded in an insulating material including a top layer of silicon nitride on a semi-conducting substrate. The method can be carried out by a two-step etching process in which an opening is first etched for the fuse window through a passivation layer by a first etchant that has low selectivity to the passivation material, and then the opening is etched through the IMD layers in a second etching process by a second etchant which has high selectivity to the silicon nitride etch-stop layer. The two-step etching process can be easily controlled so that the quality and yield for the resulting fuse windows can be improved.
摘要翻译：提供了一种用于通过钝化层蚀刻熔丝窗口的方法，以及当熔丝嵌入包括半导电层上的氮化硅顶层的绝缘材料时，沉积在熔丝顶部上的至少两个金属间介电层基质。该方法可以通过两步蚀刻工艺进行，其中首先通过对钝化材料具有低选择性的第一蚀刻剂通过钝化层蚀刻保险丝窗口的开口，然后通过IMD蚀刻开口通过第二蚀刻剂在第二蚀刻工艺中对氮化硅蚀刻停止层具有高选择性的层。可以容易地控制两步蚀刻工艺，从而可以提高所得保险丝窗口的质量和产量。

2. 发明授权

US5694207A Etch rate monitoring by optical emission spectroscopy 失效
标题翻译：通过光发射光谱法进行蚀刻速率监测
公开(公告)号：US5694207A
公开(公告)日：1997-12-02
申请号：US762076
申请日：1996-12-09
申请人： Shu Chi Hung , Hun-Jan Tao
发明人： Shu Chi Hung , Hun-Jan Tao
IPC分类号： G01N21/73 , H01L21/3065 , G01N21/62
CPC分类号： H01L21/3065 , G01N21/73
摘要： The etch rate in a plasma etching system has been monitored in-situ by using optical emission spectroscopy to measure the intensities of two or more peaks in the radiation spectrum and then using the ratio of two such peaks as a direct measure of etch rate. Examples of such peaks occur at 338.5 and 443.7 nm and at 440.6 and 437.6 nm for the fluoride/SOG system. Alternately, the intensities of at least four such peaks may be measured and the product of two ratios may be used. Examples of peaks used in this manner occurred at 440.5, 497.2 and 502.3 nm, also for the fluoride/SOG system. The method is believed to be general and not limited to fluoride/SOG.
摘要翻译：已经通过使用光发射光谱法原位监测等离子体蚀刻系统中的蚀刻速率，以测量辐射光谱中两个或更多个峰的强度，然后使用两个这样的峰的比例作为蚀刻速率的直接测量。对于氟化物/ SOG体系，这些峰的实例在338.5和443.7nm以及440.6和437.6nm处发生。或者，可以测量至少四个这样的峰的强度，并且可以使用两个比率的乘积。以这种方式使用的峰的实例发生在440.5,497.2和502.3nm，也用于氟化物/ SOG体系。该方法被认为是通用的，不限于氟化物/ SOG。

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