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1. 发明申请

US20070020842A1 Method of manufacturing mask ROM 审中-公开
标题翻译：掩膜ROM的制造方法
公开(公告)号：US20070020842A1
公开(公告)日：2007-01-25
申请号：US11482715
申请日：2006-07-10
申请人： Li Tang , Shiu Lo , Chon Jou
发明人： Li Tang , Shiu Lo , Chon Jou
IPC分类号： H01L21/8238
CPC分类号： H01L27/112 , H01L27/1122
摘要： A method of manufacturing a ROM is disclosed. The method comprises steps of (a) providing a substrate and forming a plurality of gate structures on said substrate, (b) forming a first oxide layer on said substrate and said plurality of gate structures, (c) forming a mask layer on said first oxide layer and partially etching said mask layer to form a writing opening, (d) performing an ion implantation process through said mask layer, (e) removing said mask layer to expose said first oxide layer, (f) forming a second oxide layer on said first oxide layer, (g) partially etching said second oxide layer and said first oxide layer to expose a part of said substrate as a contact opening, and (h) forming a metal layer on said contact opening. Thereby, the damage of the gate structure and the problem of metal line short can be effectively avoided.
摘要翻译：公开了一种制造ROM的方法。该方法包括以下步骤：（a）提供衬底并在所述衬底上形成多个栅极结构，（b）在所述衬底和所述多个栅极结构上形成第一氧化物层，（c）在所述衬底上形成掩模层氧化层和部分蚀刻所述掩模层以形成书写开口，（d）通过所述掩模层进行离子注入工艺，（e）去除所述掩模层以暴露所述第一氧化物层，（f）在第所述第一氧化物层，（g）部分地蚀刻所述第二氧化物层和所述第一氧化物层以暴露所述衬底的一部分作为接触开口，和（h）在所述接触开口上形成金属层。因此，可以有效地避免栅极结构的损坏和金属线短路的问题。

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