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1. 发明授权

US08569742B2 Organic field-effect transistor and semiconductor device including the same 有权
标题翻译：有机场效应晶体管和包括其的半导体器件
公开(公告)号：US08569742B2
公开(公告)日：2013-10-29
申请号：US11792232
申请日：2005-12-05
申请人： Nobuharu Ohsawa , Yoshiharu Hirakata , Shinobu Furukawa
发明人： Nobuharu Ohsawa , Yoshiharu Hirakata , Shinobu Furukawa
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L27/3248 , H01L27/3274 , H01L51/0012 , H01L51/0053 , H01L51/0055 , H01L51/0059 , H01L51/0097 , H01L51/0541 , H01L51/0545
摘要： It is an object to provide an electrode for an organic field-effect transistor having a semiconductor layer formed of an organic semiconductor material (in the present invention, referred to as an organic field-effect transistor), which can reduce the energy barrier at an interface with the semiconductor layer. A composite layer including an organic compound and a metal oxide is used for the electrode for the organic field-effect transistor, in other words the composite layer is used for at least a part of either a source electrode or a drain electrode in the organic field-effect transistor.
摘要翻译：本发明的目的是提供一种具有由有机半导体材料（在本发明中称为有机场效应晶体管）形成的半导体层的有机场效应晶体管的电极，其能够降低在与半导体层接口。对于有机场效应晶体管的电极，使用包含有机化合物和金属氧化物的复合层，换句话说，复合层用于有机场中的源电极或漏电极的至少一部分 - 影响晶体管。

2. 发明申请

US20120199839A1 SEMICONDUCTOR ELEMENT, ORGANIC TRANSISTOR, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：半导体元件，有机晶体管，发光器件和电子器件
公开(公告)号：US20120199839A1
公开(公告)日：2012-08-09
申请号：US13447446
申请日：2012-04-16
申请人： Shinobu FURUKAWA , Ryota IMAHAYASHI
发明人： Shinobu FURUKAWA , Ryota IMAHAYASHI
IPC分类号： H01L51/52
CPC分类号： H01L51/105 , H01L51/0061 , H01L51/0072 , H01L51/0541 , H01L51/0545 , H01L51/5203 , H01L51/5296
摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.
摘要翻译：本发明的目的是提供一种具有低驱动电压的有机晶体管。本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

3. 发明申请

US20120083078A1 METHOD FOR MANUFACTURING TRANSISTOR 有权
标题翻译：制造晶体管的方法
公开(公告)号：US20120083078A1
公开(公告)日：2012-04-05
申请号：US13236837
申请日：2011-09-20
申请人： Satoshi TORIUMI , Shinobu FURUKAWA
发明人： Satoshi TORIUMI , Shinobu FURUKAWA
IPC分类号： H01L21/336
CPC分类号： H01L29/66765 , H01L27/1251 , H01L29/04 , H01L29/78648 , H01L29/78696
摘要： To provide a method for manufacturing a transistor which has little variation in characteristics and favorable electric characteristics. A gate insulating film is formed over a gate electrode; a semiconductor layer including a microcrystalline semiconductor is formed over the gate insulating film; an impurity semiconductor layer is formed over the semiconductor layer; a mask is formed over the impurity semiconductor layer, and then the semiconductor layer and the impurity semiconductor layer are etched with use of the mask to form a semiconductor stacked body; the mask is removed and then the semiconductor stacked body is exposed to plasma generated in an atmosphere containing a rare gas to form a barrier region on a side surface of the semiconductor stacked body; and a wiring over the impurity semiconductor layer of the semiconductor stacked body is formed.
摘要翻译：提供一种几何特性变化小，电气特性好的晶体管的制造方法。在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成包含微晶半导体的半导体层; 在半导体层上形成杂质半导体层; 在杂质半导体层上形成掩模，然后使用掩模蚀刻半导体层和杂质半导体层，以形成半导体层叠体; 去除掩模，然后将半导体层叠体暴露于在含有稀有气体的气氛中产生的等离子体，以在半导体层叠体的侧面上形成阻挡区域; 并且形成半导体层叠体的杂质半导体层上的布线。

4. 发明授权

US08049206B2 Organic field effect transistor and semiconductor device 有权
标题翻译：有机场效应晶体管和半导体器件
公开(公告)号：US08049206B2
公开(公告)日：2011-11-01
申请号：US11657718
申请日：2007-01-25
申请人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
发明人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
IPC分类号： H01L51/30
CPC分类号： C07D209/88 , H01L51/0059 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0508
摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
摘要翻译：本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物）用来。通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

5. 发明申请

US20110147745A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110147745A1
公开(公告)日：2011-06-23
申请号：US12973123
申请日：2010-12-20
申请人： Shinya SASAGAWA , Akihiro ISHIZUKA , Shinobu FURUKAWA , Motomu KURATA
发明人： Shinya SASAGAWA , Akihiro ISHIZUKA , Shinobu FURUKAWA , Motomu KURATA
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： An embodiment is a thin film transistor which includes a gate electrode layer, a gate insulating layer provided so as to cover the gate electrode layer; a first semiconductor layer entirely overlapped with the gate electrode layer; a second semiconductor layer provided over and in contact with the first semiconductor layer and having a lower carrier mobility than the first semiconductor layer; an impurity semiconductor layer provided in contact with the second semiconductor layer; a sidewall insulating layer provided so as to cover at least a sidewall of the first semiconductor layer; and a source and drain electrode layers provided in contact with at least the impurity semiconductor layer. The second semiconductor layer may consist of parts which are apart from each other over the first semiconductor layer.
摘要翻译：一个实施例是一种薄膜晶体管，其包括栅极电极层，设置为覆盖栅极电极层的栅极绝缘层; 与栅电极层完全重叠的第一半导体层; 第二半导体层，设置在第一半导体层上并与第一半导体层接触，并具有比第一半导体层低的载流子迁移率; 设置成与所述第二半导体层接触的杂质半导体层; 侧壁绝缘层，设置成覆盖所述第一半导体层的至少一个侧壁; 以及与至少所述杂质半导体层接触地设置的源极和漏极电极层。第二半导体层可以由在第一半导体层上彼此分开的部分组成。

6. 发明授权

US07919772B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07919772B2
公开(公告)日：2011-04-05
申请号：US11791502
申请日：2005-12-08
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L29/08
CPC分类号： H01L51/0512 , H01L21/28273 , H01L51/0059 , H01L51/0062 , H01L51/0078 , H01L51/0081
摘要： A nonvolatile memory has a problem in that applied voltage is high. This is because a carrier needs to be injected into a floating gate through an insulating film by a tunneling effect. In addition, there is concern about deterioration of the insulating film by performing such carrier injection. An object of the present invention is to provide a memory in which applied voltage is lowered and deterioration of an insulating film is prevented. One feature is to use a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound as a layer functioning as a floating gate of a memory. A specific example is an element having a transistor structure where a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound and which is sandwiched between insulating layers is used as a floating gate.
摘要翻译：非易失性存储器具有施加电压高的问题。这是因为载体需要通过隧道效应通过绝缘膜注入浮栅。此外，通过进行这样的载体注入，担心绝缘膜的劣化。本发明的目的是提供一种其中施加电压降低并且防止绝缘膜劣化的存储器。一个特征是使用具有电荷转移络合物的无机化合物与有机化合物混合的层作为用作存储器的浮动栅极的层。具体实例是具有晶体管结构的元件，其中将具有电荷转移络合物的无机化合物与有机化合物混合并且夹在绝缘层之间的层用作浮栅。

7. 发明申请

US20080099757A1 Organic field effect transistor and semiconductor device 有权
标题翻译：有机场效应晶体管和半导体器件
公开(公告)号：US20080099757A1
公开(公告)日：2008-05-01
申请号：US11657718
申请日：2007-01-25
申请人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
发明人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
IPC分类号： H01L29/08 , H01L29/76 , H01L35/24 , H01L51/00
CPC分类号： C07D209/88 , H01L51/0059 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0508
摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
摘要翻译：本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物）用来。通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

8. 发明申请

US20060214160A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060214160A1
公开(公告)日：2006-09-28
申请号：US11376198
申请日：2006-03-16
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , B82Y10/00 , H01L27/283 , H01L27/3244 , H01L51/0046 , H01L51/0059 , H01L51/0068 , H01L51/0078 , H01L51/0562
摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.
摘要翻译：本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

9. 发明授权

US08592821B2 Semiconductor element, organic transistor, light-emitting device, and electronic device 有权
公开(公告)号：US08592821B2
公开(公告)日：2013-11-26
申请号：US13447446
申请日：2012-04-16
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L27/14
CPC分类号： H01L51/105 , H01L51/0061 , H01L51/0072 , H01L51/0541 , H01L51/0545 , H01L51/5203 , H01L51/5296
摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.

10. 发明授权

US08501530B2 Method for manufacturing semiconductor device with organic semiconductor layer 有权
标题翻译：用于制造具有有机半导体层的半导体器件的方法
公开(公告)号：US08501530B2
公开(公告)日：2013-08-06
申请号：US13010395
申请日：2011-01-20
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L21/00 , H01L51/40 , H01L21/22 , H01L21/38
CPC分类号： H01L51/0545 , B82Y10/00 , H01L27/283 , H01L27/3244 , H01L51/0046 , H01L51/0059 , H01L51/0068 , H01L51/0078 , H01L51/0562
摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.
摘要翻译：本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

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