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1. 发明授权

US08552106B2 Dispersion of fluorosilicones and fluorine- and silicon-containing surface treatment agent 有权
标题翻译：氟硅氧烷和含氟和硅的表面处理剂的分散
公开(公告)号：US08552106B2
公开(公告)日：2013-10-08
申请号：US12935344
申请日：2009-03-12
申请人： Ikuo Yamamoto , Tetsuya Masutani , Masahiro Miyahara , Takashi Enomoto , Shinichi Minami , Peter Cheshire Hupfield , Samantha Reed , Avril E. Surgenor
发明人： Ikuo Yamamoto , Tetsuya Masutani , Masahiro Miyahara , Takashi Enomoto , Shinichi Minami , Peter Cheshire Hupfield , Samantha Reed , Avril E. Surgenor
IPC分类号： C08L83/00
CPC分类号： C08F283/122 , C08F14/18 , C08F14/22 , C08F214/186 , C08F283/124 , C08J3/03 , C08J2383/10 , D06M15/277 , D06M15/3568 , D06M15/643 , D06M15/6436 , D06M15/657 , D06M2200/11 , D06M2200/12 , D06M2200/50 , C08F2/30
摘要： A fluorosilicone reaction product of a mercapto or vinyl functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2═C(X)COOYRf, and (B) a mercapto or vinyl functional organopolysiloxane.
摘要翻译：公开了巯基或乙烯基官能的有机聚硅氧烷和含氟单体的氟硅酮反应产物，以及氟硅氧烷的制备方法。氟硅氧烷产品适用于纺织品，特别是织物等基材，以赋予纺织品防油性能。氟化硅反应产物由（A）式为CH2 = C（X）COOYRf的含氟单体和（B）巯基或乙烯基官能的有机聚硅氧烷制备。

2. 发明授权

US08022156B2 Greaseproof paper 有权
标题翻译：防油纸
公开(公告)号：US08022156B2
公开(公告)日：2011-09-20
申请号：US12375086
申请日：2007-07-24
申请人： Peter Cheshire Hupfield , Tetsuya Masutani , Shinichi Minami , Ikuo Yamamoto
发明人： Peter Cheshire Hupfield , Tetsuya Masutani , Shinichi Minami , Ikuo Yamamoto
IPC分类号： C08F30/08
CPC分类号： C09D133/16 , C08F283/122 , D21H17/59 , D21H21/16 , Y10T428/31663 , C08F220/24
摘要： A greaseproof paper is provided for use in food processing and/or packaging of foods in which paper has been rendered oleophobic by treatment with a fluorine-containing polymer. The fluorine-containing polymer may be prepared by polymerizing a fluorine-containing monomer in the presence of a mercapto group-containing organopolysiloxane. The fluorine-containing polymer may be applied to paper by coating onto pre-formed paper, or by applying the polymer as a size during a papermaking process.
摘要翻译：提供防油纸用于食品加工和/或包装通过用含氟聚合物处理已经产生疏油性的食品。含氟聚合物可以通过在含巯基的有机聚硅氧烷的存在下聚合含氟单体来制备。含氟聚合物可以通过涂布在预成型纸上或通过在造纸过程中以聚合物的尺寸施加到纸上。

3. 发明申请

US20110057142A1 FLUOROSILICONES AND FLUORINE- AND SILICON-CONTAINING SURFACE TREATMENT AGENT 有权
标题翻译：氟代氟化物和含氟和含硅表面处理剂
公开(公告)号：US20110057142A1
公开(公告)日：2011-03-10
申请号：US12866074
申请日：2009-02-04
申请人： Ikuo Yamamoto , Tetsuya Masutani , Shinichi Minami , Peter Cheshire Hupfield , Avril E. Surgenor , Samantha Reed
发明人： Ikuo Yamamoto , Tetsuya Masutani , Shinichi Minami , Peter Cheshire Hupfield , Avril E. Surgenor , Samantha Reed
IPC分类号： C08F18/20 , D06M15/263
CPC分类号： C08F283/12 , C08F290/068 , C08F290/148 , C08L51/003 , C08L51/085 , C09D151/003 , C09D151/085 , C08L2666/02
摘要： A fluorosilicone reaction product of a vinyl functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2═C(X)COOYRf, and (B) a vinyl functional organopolysiloxane.
摘要翻译：公开了一种乙烯基官能的有机聚硅氧烷和含氟单体的氟硅酮反应产物，以及氟硅氧烷的制备方法。氟硅氧烷产品适用于纺织品，特别是织物等基材，以赋予纺织品防油性能。氟硅酮反应产物由（A）式为CH2 = C（X）COOYRf的含氟单体和（B）乙烯基官能的有机聚硅氧烷制备。

4. 发明申请

US20090030143A1 FLUOROSILICONES AND FLUORINE- AND SILICON-CONTAINING SURFACE TREATMENT AGENT 有权
标题翻译：氟代氟化物和含氟和含硅表面处理剂
公开(公告)号：US20090030143A1
公开(公告)日：2009-01-29
申请号：US11913814
申请日：2006-05-08
申请人： Ikuo Yamamoto , Shinichi Minami , Tetsuya Masutani , Peter C. Hupfield , Avril E. Surgenor
发明人： Ikuo Yamamoto , Shinichi Minami , Tetsuya Masutani , Peter C. Hupfield , Avril E. Surgenor
IPC分类号： C08L83/06 , C08G77/14
CPC分类号： D06M15/277 , C08F283/122 , C08G77/26 , C08G77/28 , C08G77/442 , D06M15/6436 , D06M15/657 , D06M2200/11 , Y10T428/31663 , Y10T442/60 , C08F220/24 , C08F214/18
摘要： A fluorosilicone reaction product of a mercapto functional organopolysiloxane and a fluorine-containing monomer, and methods of preparing the fluorosilicone are disclosed. The fluorosilicone products are suitable for application to substrates such as textiles, particularly fabrics, to impart oil repellent properties to the textile. The fluorosilicone reaction product is prepared from (A) a fluorine-containing monomer of the formula CH2═C(X)COOYRf, and (B) a mercapto functional organopolysiloxane.
摘要翻译：公开了巯基官能化有机聚硅氧烷和含氟单体的氟硅酮反应产物及氟硅氧烷的制备方法。氟硅氧烷产品适用于纺织品，特别是织物等基材，以赋予纺织品防油性能。氟硅酮反应产物由（A）式为CH2-C（X）COOYRf的含氟单体和（B）巯基官能的有机聚硅氧烷制备。

5. 发明申请

US20070295245A1 Fluorine-Containing Treatment Composition 有权
标题翻译：含氟处理组合物
公开(公告)号：US20070295245A1
公开(公告)日：2007-12-27
申请号：US11666428
申请日：2005-10-27
申请人： Ikuo Yamamoto , Shinichi Minami
发明人： Ikuo Yamamoto , Shinichi Minami
IPC分类号： C08G18/28 , B05D3/04 , C08K5/205
CPC分类号： C09K3/18 , C08F220/22 , C08F220/24 , C08F2220/185 , C08G18/2885 , C08G18/792 , C08K5/34924 , C09D133/16 , C09D175/04 , D06M15/277 , D06M15/576 , C08L33/16 , C08L2666/20
摘要： Disclosed is a composition containing a fluorine-containing urethane compound (A) and a fluorine-containing polymer (B) having a repeating unit derived from a fluorine-containing monomer represented by the following formula (I): CH2═C(—X)—C(═O)-A-Rf (I) (wherein X represents a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a CFX1X2 group (wherein X1 and X2 respectively represent a hydrogen atom, a fluorine atom or a chlorine atom), a cyano group, a straight or branched chain fluoroalkyl group having 1-20 carbon atoms, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted phenyl group; A represents a divalent group; and Rf represents a straight or branched chain perfluoroalkyl group having 1-6 carbon atoms).
摘要翻译：公开了含有由下式（I）表示的含氟单体衍生的重复单元的含氟氨基甲酸酯化合物（A）和含氟聚合物（B）的组合物：<β在线式描述=“在线公式”end =“lead”？> CH 2 -C（-X）-C（-O）-A-Rf（I）<β在线式描述=“In-line Formulas”end =“tail”？>（其中X表示氟原子，氯原子，溴原子，碘原子，CFX <1> X 2 基团（其中X 1和X 2分别表示氢原子，氟原子或氯原子），氰基，直链或支链具有1-20个碳原子的氟代烷基，取代或未取代的苄基或取代或未取代的苯基; A表示二价基团; Rf表示具有1-6个碳原子的直链或支链全氟烷基）。

6. 发明申请

US20060133146A1 Semiconductor device and a method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060133146A1
公开(公告)日：2006-06-22
申请号：US11297392
申请日：2005-12-09
申请人： Keiichi Maekawa , Shinichi Minami , Kozo Watanabe , Shiro Kamohara , Shoji Yoshida
发明人： Keiichi Maekawa , Shinichi Minami , Kozo Watanabe , Shiro Kamohara , Shoji Yoshida
IPC分类号： G11C16/04
CPC分类号： G11C16/0416 , G11C16/3418 , G11C16/3427 , H01L29/66833 , H01L29/792
摘要： A semiconductor device having a well region of a first conduction type formed in a main surface of a semiconductor substrate, and a nonvolatile memory element formed at the well region is provided. The nonvolatile memory element comprises a gate electrode formed over the well region through an insulating film for charge storage, and a source region and drain region of a second conduction type which are separated from each other and are disposed in the well region. The well region includes a third semiconductor region, a second semiconductor region which is arranged at a position deeper than the third semiconductor region, and a first semiconductor region that is arranged at a position deeper than the second semiconductor region. The first and third semiconductor regions, respectively, have an impurity concentration higher than the second semiconductor region.
摘要翻译：提供一种形成在半导体衬底的主表面中的具有第一导电类型的阱区域的半导体器件和形成在阱区域的非易失性存储元件。非易失性存储元件包括通过用于电荷存储的绝缘膜在阱区上形成的栅电极，以及彼此分离并设置在阱区中的第二导电类型的源极区和漏极区。阱区域包括第三半导体区域，布置在比第三半导体区域更深的位置处的第二半导体区域以及布置在比第二半导体区域更深的位置的第一半导体区域。第一和第三半导体区域分别具有高于第二半导体区域的杂质浓度。

7. 发明授权

US07064090B2 Method of manufacturing a semiconductor integrated circuit device 失效
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US07064090B2
公开(公告)日：2006-06-20
申请号：US10942860
申请日：2004-09-17
申请人： Shinichi Minami , Yoshiaki Kamigaki , Hideki Yasuoka , Fukuo Owada
发明人： Shinichi Minami , Yoshiaki Kamigaki , Hideki Yasuoka , Fukuo Owada
IPC分类号： H01L21/00
CPC分类号： H01L27/11526 , H01L27/0629 , H01L27/105 , H01L27/1052 , H01L27/11521 , H01L27/11546 , Y10S438/983
摘要： A manufacturing technique for a zener diode which includes forming a first semiconductor region in a region such as a well region at a primary face of a semiconductor substrate and then forming a second semiconductor region of opposite conductivity type thereover. The second semiconductor region covers an area greater than the underlying first semiconductor region. The method further calls for forming an insulating film on the primary face of the substrate followed by the forming connection holes in the insulating film to expose an upper part of the second semiconductor region located outside the area covered by the junction affected between the first and second semiconductor regions. This is followed by the formation of a wire at the upper part of the insulating film in which an electrical connection is affected between the wire and the second semiconductor region through the plural connection holes which are distributively arranged.
摘要翻译：一种用于齐纳二极管的制造技术，其包括在半导体衬底的初级面的诸如阱区域的区域中形成第一半导体区域，然后在其上形成相反导电类型的第二半导体区域。第二半导体区域覆盖大于下面的第一半导体区域的面积。该方法还要求在衬底的主面上形成绝缘膜，然后在绝缘膜中形成连接孔，以暴露第二半导体区域的上部，该第二半导体区域的上部位于由第一和第二半导体区域。接着在绝缘膜的上部形成通过分布布置的多个连接孔在电线和第二半导体区域之间形成电连接的导线。

8. 发明申请

US20060102967A1 Semiconductor integrated circuit 失效
公开(公告)号：US20060102967A1
公开(公告)日：2006-05-18
申请号：US11320850
申请日：2005-12-30
申请人： Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Masataka Kato
发明人： Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Masataka Kato
IPC分类号： H01L29/76
CPC分类号： G11C16/0475 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42332 , H01L29/7887
摘要： A multi-storage nonvolatile memory of high density, high speed and high reliability has a memory transistor and switch transistors disposed on both the sides of the memory transistor. The memory transistor includes a gate insulating film having discrete traps and a memory gate electrode, whereas the switch transistors include switch gate electrodes. The gate insulating film has the discrete traps for storing information charge, can locally inject carriers, and one memory cell constitutes a multi-storage cell for storing at least information of 2 bits. The switch transistors having the switch gate electrodes realize source side injection. The memory transistor is fommed together with the switch transistors in self-aligned diffusion. The memory gate electrode of the memory transistor is connected to a word line so as to perform word-line erase.

9. 发明授权

US06936888B2 Nonvolatile memory device with multi-bit memory cells having plural side gates 有权
标题翻译：具有多个存储单元的非易失性存储器件具有多个侧栅极
公开(公告)号：US06936888B2
公开(公告)日：2005-08-30
申请号：US10676158
申请日：2003-10-02
申请人： Kozo Katayama , Yoshiaki Kamigaki , Shinichi Minami
发明人： Kozo Katayama , Yoshiaki Kamigaki , Shinichi Minami
IPC分类号： B42D15/10 , G06K19/07 , G06K19/077 , G11C16/02 , G11C16/04 , G11C16/06 , G11C16/10 , G11C16/14 , G11C16/26 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/115 , G11C16/0475 , G11C16/10 , G11C16/14 , G11C16/26 , H01L29/7923
摘要： A nonvolatile memory device has a plurality of nonvolatile memory cells in which a memory gate electrode is formed over a first semiconductor region with a gate insulating film and a gate nitride film interposed therebetween. First and second switch gate electrodes, and first and second signal electrodes used as source/drain electrodes are formed on both sides of the memory gate electrode. Electrons are injected into the gate nitride film from the source side to store information in the memory cells. The memory gate electrode and the switch gate electrodes extend in the same direction. The application of a high electric field to a memory cell which is not selected for writing can be avoided owing to the switch gate electrodes being held in a cut-off state.
摘要翻译：非易失性存储器件具有多个非易失性存储单元，其中存储栅极电极形成在第一半导体区域上，栅极绝缘膜和栅极氮化物膜介于其间。第一和第二开关栅电极以及用作源/漏电极的第一和第二信号电极形成在存储栅电极的两侧。从源极将电子注入到栅极氮化物膜中，以将信息存储在存储单元中。存储栅电极和开关栅电极沿相同方向延伸。由于开关栅极被保持在截止状态，因此可以避免对未被选择用于写入的存储单元施加高电场。

10. 发明申请

US20050032298A1 Method of manufacturing a semiconductor integrated circuit device 失效
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US20050032298A1
公开(公告)日：2005-02-10
申请号：US10942860
申请日：2004-09-17
申请人： Shinichi Minami , Yoshiaki Kamigaki , Hideki Yasuoka , Fukuo Owada
发明人： Shinichi Minami , Yoshiaki Kamigaki , Hideki Yasuoka , Fukuo Owada
IPC分类号： H01L21/822 , H01L21/8234 , H01L21/8239 , H01L21/8247 , H01L27/04 , H01L27/06 , H01L27/088 , H01L27/105 , H01L27/115 , H01L29/76 , H01L29/866 , H01L29/94
CPC分类号： H01L27/11526 , H01L27/0629 , H01L27/105 , H01L27/1052 , H01L27/11521 , H01L27/11546 , Y10S438/983
摘要： A manufacturing technique for a zener diode which includes forming a first semiconductor region in a region such as a well region at a primary face of a semiconductor substrate and then forming a second semiconductor region of opposite conductivity type thereover. The second semiconductor region covers an area greater than the underlying first semiconductor region. The method further calls for forming an insulating film on the primary face of the substrate followed by the forming connection holes in the insulating film to expose an upper part of the second semiconductor region located outside the area covered by the junction affected between the first and second semiconductor regions. This is followed by the formation of a wire at the upper part of the insulating film in which an electrical connection is affected between the wire and the second semiconductor region through the plural connection holes which are distributively arranged.
摘要翻译：一种用于齐纳二极管的制造技术，其包括在半导体衬底的初级面的诸如阱区域的区域中形成第一半导体区域，然后在其上形成相反导电类型的第二半导体区域。第二半导体区域覆盖大于下面的第一半导体区域的面积。该方法还要求在衬底的主面上形成绝缘膜，然后在绝缘膜中形成连接孔，以暴露第二半导体区域的上部，该第二半导体区域的上部位于由第一和第二半导体区域。接着在绝缘膜的上部形成通过分布布置的多个连接孔在电线和第二半导体区域之间形成电连接的导线。

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