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1. 发明授权

US07420348B2 Drive apparatus 失效
标题翻译：驱动装置
公开(公告)号：US07420348B2
公开(公告)日：2008-09-02
申请号：US11358523
申请日：2006-02-21
申请人： Shingo Fukamizu , Yasunori Yamamoto , Shuji Tamaoka
发明人： Shingo Fukamizu , Yasunori Yamamoto , Shuji Tamaoka
IPC分类号： G05B11/01
CPC分类号： G11B7/0946 , G11B7/0948 , G11B7/0956 , G11B19/02
摘要： Optical disc drives designed for reduced power consumption switch the supply voltage in three stages between first, second, and third power supplies. The reduction in power consumption that is possible in the focusing and tracking drive circuits with three stage switching control is limited. This drive apparatus enables further reductions in power consumption. A drive output tracking signal is generated according to the drive conditions of the focusing or tracking drive circuit. The drive output tracking signal is applied to the drive circuit power supply, and the power supply is controlled according to the drive output tracking signal. A power supply change detector detects sudden changes in the drive output tracking signal, and inputs the detection signal to the DSP controlling the entire system. The DSP determines whether to improve the power supply response by comparison with predetermined conditions, and returns the result to the power supply.
摘要翻译：设计用于降低功耗的光盘驱动器将电源电压在第一，第二和第三电源之间分三级进行切换。在具有三级切换控制的聚焦和跟踪驱动电路中可能的功耗的降低是有限的。该驱动装置能够进一步降低功耗。根据聚焦或跟踪驱动电路的驱动条件产生驱动输出跟踪信号。驱动输出跟踪信号被施加到驱动电路电源，并且根据驱动输出跟踪信号来控制电源。电源变化检测器检测驱动输出跟踪信号的突然变化，并将检测信号输入到控制整个系统的DSP。 DSP通过与预定条件相比较来确定是否改善电源响应，并将结果返回给电源。

2. 发明申请

US20050134211A1 Stepping motor drive device and method 有权
标题翻译：步进电机驱动装置及方法
公开(公告)号：US20050134211A1
公开(公告)日：2005-06-23
申请号：US10971689
申请日：2004-10-25
申请人： Shingo Fukamizu , Katsuhiro Onishi
发明人： Shingo Fukamizu , Katsuhiro Onishi
IPC分类号： H02P8/10 , H02P8/32 , H02P8/00
CPC分类号： H02P8/32
摘要： A reference signal generation unit 110a generates a reference signal VCA representing a limit indicator. Under the control of a PWM control unit 120a, a bridge rectification circuit 130a controls the current supplied to a coil 19a to the limit indicator, using a current chopper method. Therewith, the circuit 130a implements synchronous rectification where transistors 10 and 12 are brought into conduction when the current supply is stopped, forming a closed circuit with the coil 19a, and a regenerative current circulates in the closed circuit. During a time period when the reference signal is decreasing relatively rapidly, a SR prohibition unit 115a prohibits the transistor 10 or 12 from being brought into conduction when the current supply is stopped, and thereby the decay of regenerative current is accelerated.
摘要翻译：基准信号生成部110a生成表示极限指示符的基准信号VCA。在PWM控制单元120a的控制下，桥式整流电路130a使用电流斩波方法将提供给线圈19a的电流控制到极限指示器。因此，电路130a实现同步整流，其中当电流供应停止时晶体管10和12导通，与线圈21a形成闭合电路，并且再生电流在闭路中循环。在参考信号相对快速地减小的时间段期间，当停止供电时，SR禁止单元115a禁止晶体管10或12导通，从而加速再生电流的衰减。

3. 发明授权

US07531976B2 Motor drive device 有权
标题翻译：电机驱动装置
公开(公告)号：US07531976B2
公开(公告)日：2009-05-12
申请号：US11676644
申请日：2007-02-20
申请人： Shingo Fukamizu , Yasunori Yamamoto , Shinichi Kuroshima
发明人： Shingo Fukamizu , Yasunori Yamamoto , Shinichi Kuroshima
IPC分类号： H02P6/18
CPC分类号： H02P6/182 , H02P6/21
摘要： Problems with accuracy reading position detection signal peaks and minute phase differences in the detection current make motor drive control easily susceptible to differences in motor characteristics. The rotor position is determined based on whether or not a neutral point difference voltage, which is the difference voltage between the neutral point voltage and the pseudo-neutral-point voltage when the motor phases are selectively energized, exceeds a specific threshold value. The phase energized to start the motor is determined based on this determination and the motor is energized accordingly to start. Instead of switching directly from the search step at the initial rotor position to the back-EMF voltage mode, a search and start mode that creates initial rotor speed sufficient to start the motor is executed before entering the back-EMF voltage mode.
摘要翻译：读取位置检测信号峰值和检测电流的微小相位差的问题使电机驱动控制容易受到电机特性的差异的影响。转子位置是基于当电动机相位被选择性地通电时中性点电压和伪中性点电压之间的差分电压是否中性点差电压是否超过特定阈值来确定。基于该确定确定启动电动机的相位，相应地启动电动机起动。代替直接从初始转子位置处的搜索步骤切换到反电动势电压模式，在进入反电动势电压模式之前执行产生足以启动电动机的初始转子速度的搜索和启动模式。

4. 发明申请

US20060238160A1 Drive apparatus 审中-公开
标题翻译：驱动装置
公开(公告)号：US20060238160A1
公开(公告)日：2006-10-26
申请号：US11398399
申请日：2006-04-05
申请人： Shingo Fukamizu , Yasunori Yamamoto
发明人： Shingo Fukamizu , Yasunori Yamamoto
IPC分类号： G05B1/06
CPC分类号： G11B19/02 , G11B7/0953 , G11B7/0956
摘要： Optical disc drives designed for reduced power consumption switch the supply voltage in three stages between first, second, and third power supplies, but the reduction in power consumption that is possible in the drive circuits with three stage switching control is limited. A drive output tracking signal is generated according to the waveform of the drive output that drives the focus and tracking actuators, and this drive output tracking signal is applied to a step-up type focusing and tracking power supply. The step-up power supply controls the fixed output according to the drive output tracking signal, and when the drive output is greater than the fixed output, control output that is greater than or equal to the fixed output and slightly greater than the drive output is generated. This control output is supplied to the focus and tracking drive circuits to produce drive output.
摘要翻译：设计用于降低功耗的光盘驱动器将电源电压在第一，第二和第三电源之间分三级切换，但是在具有三级切换控制的驱动电路中可能的功耗的降低是有限的。根据驱动焦点和跟踪执行器的驱动输出的波形产生驱动输出跟踪信号，该驱动输出跟踪信号被应用于升压型聚焦跟踪电源。升压电源根据驱动输出跟踪信号控制固定输出，当驱动输出大于固定输出时，大于或等于固定输出的控制输出略大于驱动输出，生成。该控制输出提供给焦点和跟踪驱动电路以产生驱动输出。

5. 发明授权

US07687900B2 Semiconductor integrated circuit device and fabrication method for the same 失效
标题翻译：半导体集成电路器件及其制造方法相同
公开(公告)号：US07687900B2
公开(公告)日：2010-03-30
申请号：US12038060
申请日：2008-02-27
申请人： Shingo Fukamizu , Yutaka Nabeshima
发明人： Shingo Fukamizu , Yutaka Nabeshima
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L22/32 , G01R31/2884 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05009 , H01L2224/05073 , H01L2224/05552 , H01L2224/05553 , H01L2224/05624 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/49431 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/20753 , H01L2924/20754 , H01L2924/20752 , H01L2924/00 , H01L2924/20755 , H01L2224/45099 , H01L2924/00015 , H01L2924/2075
摘要： The semiconductor integrated circuit device includes: an active element, an interlayer insulting film, first and second metal patterns made of a first metal layer formed right above the active element, first and second buses made of a second metal layer formed right above the first metal layer, and contact pads provided on the first and second buses. The contact pad has a probe testing region and a bonding region.
摘要翻译：半导体集成电路器件包括：有源元件，层间绝缘膜，由形成在有源元件正上方的第一金属层制成的第一和第二金属图案，由形成在第一金属正上方的第二金属层制成的第一和第二总线层和在第一和第二总线上提供的接触焊盘。接触垫具有探针测试区域和结合区域。

6. 发明申请

US20080128755A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US20080128755A1
公开(公告)日：2008-06-05
申请号：US11946282
申请日：2007-11-28
申请人： Shingo Fukamizu , Yutaka Nabeshima , Yasunori Yamamoto
发明人： Shingo Fukamizu , Yutaka Nabeshima , Yasunori Yamamoto
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L27/088 , H01L21/823475 , H01L23/4952 , H01L23/49562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05567 , H01L2224/05571 , H01L2224/05599 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48011 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01045 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3011 , H01L2924/20651 , H01L2924/00 , H01L2924/2075 , H01L2924/20755
摘要： A semiconductor integrated circuit relating to one aspect of the present invention includes a power transistor, at least one or more of first metal patterns functioning as a first electrode of the power transistor and at least one or more of second metal patterns functioning as a second electrode of the power transistor formed in an interlayer insulation film on the transistor, at least one or more of first busses electrically connected to a corresponding first metal pattern of the at least one or more of the first metal patterns, a single second bus electrically connected to the at least one or more of second metal patterns, and a contact pad provided to each of the at least one or more of first busses and the single second bus.
摘要翻译：涉及本发明的一个方面的半导体集成电路包括功率晶体管，用作功率晶体管的第一电极的至少一个或多个第一金属图案以及用作第二电极的至少一个或多个第二金属图案形成在晶体管上的层间绝缘膜中的功率晶体管，至少一个或多个电连接到所述至少一个或多个所述第一金属图案中的对应的第一金属图案的第一总线，一个第二总线电连接到所述至少一个或多个第二金属图案以及提供给所述至少一个或多个所述第一总线和所述单个第二总线中的每一个的接触焊盘。

7. 发明申请

US20080099783A1 Semiconductor integrated circuit and method for manufacturing the same 失效
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US20080099783A1
公开(公告)日：2008-05-01
申请号：US11976963
申请日：2007-10-30
申请人： Shingo Fukamizu , Yutaka Nabeshima , Takashi Katsuyama
发明人： Shingo Fukamizu , Yutaka Nabeshima , Takashi Katsuyama
IPC分类号： H01L23/49 , H01L21/44
CPC分类号： H01L23/49562 , H01L23/4952 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05073 , H01L2224/05093 , H01L2224/05094 , H01L2224/05096 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/13023 , H01L2224/13099 , H01L2224/16 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/49111 , H01L2224/49113 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/20753 , H01L2924/20754 , H01L2924/00014 , H01L2924/20752 , H01L2924/00
摘要： A semiconductor integrated circuit includes a power transistor formed on a semiconductor substrate, a plurality of first metal patterns and a plurality of second metal patterns which are formed right above the power transistor and function as a first electrode and as a second electrode of the power transistor, respectively, a plurality of first buses each electrically connected with, of a plurality of first metal patterns, a corresponding first metal pattern, a plurality of second buses each electrically connected with, of a plurality of second metal patterns, a corresponding second metal pattern, wherein one contact pad is provided to each of a plurality of first buses and a plurality of second buses.
摘要翻译：半导体集成电路包括形成在半导体衬底上的功率晶体管，多个第一金属图案和多个第二金属图案，其形成在功率晶体管的正上方并用作第一电极和作为功率晶体管的第二电极分别与多个第一金属图形电连接的多个第一总线，相应的第一金属图案，与多个第二金属图案电连接的多个第二总线，相应的第二金属图案其中，一个接触垫被提供给多个第一总线和多个第二总线中的每一个。

8. 发明申请

US20070194731A1 MOTOR DRIVE METHOD 审中-公开
标题翻译：电机驱动方式
公开(公告)号：US20070194731A1
公开(公告)日：2007-08-23
申请号：US11676680
申请日：2007-02-20
申请人： Shingo FUKAMIZU , Yasunori YAMAMOTO , Shinichi KUROSHIMA
发明人： Shingo FUKAMIZU , Yasunori YAMAMOTO , Shinichi KUROSHIMA
IPC分类号： H02P7/06
CPC分类号： H02P6/182 , H02P6/21 , H02P6/22
摘要： Problems with accuracy reading position detection signal peaks and minute phase differences in the detection current make motor drive control easily susceptible to differences in motor characteristics. The rotor position is determined based on whether or not a neutral point difference voltage, which is the difference voltage between the neutral point voltage and the pseudo-neutral-point voltage when the motor phases are selectively energized, exceeds a specific threshold value. The phase energized to start the motor is determined based on this determination and the motor is energized accordingly to start. Instead of switching directly from the search step at the initial rotor position to the back-EMF voltage mode, a search and start mode that creates initial rotor speed sufficient to start the motor is executed before entering the back-EMF voltage mode.
摘要翻译：读取位置检测信号峰值和检测电流的微小相位差的问题使电机驱动控制容易受到电机特性的差异的影响。转子位置是基于当电动机相位被选择性地通电时中性点电压和伪中性点电压之间的差分电压是否中性点差电压是否超过特定阈值来确定。基于该确定确定启动电动机的相位，相应地启动电动机起动。代替直接从初始转子位置处的搜索步骤切换到反电动势电压模式，在进入反电动势电压模式之前执行产生足以启动电动机的初始转子速度的搜索和启动模式。

9. 发明授权

US08138615B2 Semiconductor integrated circuit providing for wire bonding directly above an active circuit region, and manufacturing method thereof 有权
标题翻译：提供直接在有源电路区域上方引线接合的半导体集成电路及其制造方法
公开(公告)号：US08138615B2
公开(公告)日：2012-03-20
申请号：US11946282
申请日：2007-11-28
申请人： Shingo Fukamizu , Yutaka Nabeshima , Yasunori Yamamoto
发明人： Shingo Fukamizu , Yutaka Nabeshima , Yasunori Yamamoto
IPC分类号： H01L23/48
CPC分类号： H01L27/088 , H01L21/823475 , H01L23/4952 , H01L23/49562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05567 , H01L2224/05571 , H01L2224/05599 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48011 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01045 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3011 , H01L2924/20651 , H01L2924/00 , H01L2924/2075 , H01L2924/20755
摘要： A semiconductor integrated circuit relating to one aspect of the present invention includes a power transistor, at least one or more of first metal patterns functioning as a first electrode of the power transistor and at least one or more of second metal patterns functioning as a second electrode of the power transistor formed in an interlayer insulation film on the transistor, at least one or more of first busses electrically connected to a corresponding first metal pattern of the at least one or more of the first metal patterns, a single second bus electrically connected to the at least one or more of second metal patterns, and a contact pad provided to each of the at least one or more of first busses and the single second bus.
摘要翻译：涉及本发明的一个方面的半导体集成电路包括功率晶体管，用作功率晶体管的第一电极的至少一个或多个第一金属图案以及用作第二电极的至少一个或多个第二金属图案形成在晶体管上的层间绝缘膜中的功率晶体管，至少一个或多个电连接到所述至少一个或多个所述第一金属图案中的对应的第一金属图案的第一总线，一个第二总线电连接到所述至少一个或多个第二金属图案以及提供给所述至少一个或多个所述第一总线和所述单个第二总线中的每一个的接触焊盘。

10. 发明申请

US20080128826A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND FABRICATION METHOD FOR THE SAME 审中-公开
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US20080128826A1
公开(公告)日：2008-06-05
申请号：US11945605
申请日：2007-11-27
申请人： Shingo Fukamizu , Yutaka Nabeshima , Hideki Nishino
发明人： Shingo Fukamizu , Yutaka Nabeshima , Hideki Nishino
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L23/49562 , H01L23/4952 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05009 , H01L2224/05552 , H01L2224/05553 , H01L2224/05647 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/49111 , H01L2224/49113 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/00 , H01L2224/45099
摘要： The semiconductor integrated circuit includes: a power transistor formed on a semiconductor substrate; a plurality of first metal patterns and a plurality of second metal patterns formed right above the power transistor for acting as first and second electrodes of the power transistor; a first bus electrically connected with the first metal patterns; a second bus electrically connected with the second metal patterns; and one contact pad provided for each of the first and second buses. Each of the first and second buses has at least one slit.
摘要翻译：半导体集成电路包括：形成在半导体衬底上的功率晶体管; 形成在功率晶体管正上方的多个第一金属图形和多个第二金属图案，用作功率晶体管的第一和第二电极; 与所述第一金属图案电连接的第一总线; 与所述第二金属图案电连接的第二总线; 以及为第一和第二总线中的每一个设置的一个接触垫。第一和第二总线中的每一个具有至少一个狭缝。

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