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1. 发明授权

US08853738B2 Power LDMOS device and high voltage device 有权
标题翻译：电源LDMOS器件和高压器件
公开(公告)号：US08853738B2
公开(公告)日：2014-10-07
申请号：US13169058
申请日：2011-06-27
申请人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
发明人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
IPC分类号： H01L29/06 , H01L29/78 , H01L29/10 , H01L29/423
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/42368
摘要： A power LDMOS device including a substrate, source and drain regions, gates and trench insulating structures is provided. The substrate has a finger tip area, a finger body area and a palm area. The source regions are in the substrate in the finger body area and further extend to the finger tip area. The neighboring source regions in the finger tip area are connected. The outmost two source regions further extend to the palm area and are connected. The drain regions are in the substrate in the finger body area and further extend to the palm area. The neighboring drain regions in the palm area are connected. The source and drain regions are disposed alternately. A gate is disposed between the neighboring source and drain regions. The trench insulating structures are in the substrate in the palm area and respectively surround ends of the drain regions.
摘要翻译：提供了包括衬底，源极和漏极区域，栅极和沟槽绝缘结构的功率LDMOS器件。基底具有指尖区域，手指体区域和手掌区域。源区域在手指主体区域中的基底中，并且进一步延伸到指尖区域。指尖区域中的相邻源区域被连接。最远的两个源区域进一步延伸到手掌区域并被连接。漏极区域位于手指主体区域中的基板中，并且进一步延伸到手掌区域。手掌区域中的相邻漏极区域被连接。源区和漏区交替布置。栅极设置在相邻的源区和漏区之间。沟槽绝缘结构位于手掌区域中的基板中，并且分别围绕漏极区域的端部。

2. 发明授权

US08785969B2 Resurf structure and LDMOS device 有权
标题翻译： Resurf结构和LDMOS器件
公开(公告)号：US08785969B2
公开(公告)日：2014-07-22
申请号：US13169052
申请日：2011-06-27
申请人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
发明人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
IPC分类号： H01L29/78
CPC分类号： H01L29/7817 , H01L21/26586 , H01L29/0634 , H01L29/0649 , H01L29/0696 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7816 , H01L29/7826
摘要： A reduced surface field (RESURF) structure and a lateral diffused metal oxide semiconductor (LDMOS) device including the same are provided. The RESURF structure includes a substrate of a first conductivity type, a deep well region of a second conductivity type, an isolation structure, at least one trench insulating structure, and at least one doped region of the first conductivity type. The deep well region is disposed in the substrate. The isolation structure is disposed on the substrate. The trench insulating structure is disposed in the deep well region below the isolation structure. The doped region is disposed in the deep well region and surrounds a sidewall and a bottom of the trench insulating structure.
摘要翻译：提供减小的表面场（RESURF）结构和包括其的横向扩散金属氧化物半导体（LDMOS）器件。 RESURF结构包括第一导电类型的衬底，第二导电类型的深阱区，隔离结构，至少一个沟槽绝缘结构和至少一个第一导电类型的掺杂区。深井区域设置在基板中。隔离结构设置在基板上。沟槽绝缘结构设置在隔离结构下方的深井区域中。掺杂区域设置在深阱区域中并且包围沟槽绝缘结构的侧壁和底部。

3. 发明申请

US20120261752A1 POWER LDMOS DEVICE AND HIGH VOLTAGE DEVICE 有权
标题翻译： POWER LDMOS器件和高压器件
公开(公告)号：US20120261752A1
公开(公告)日：2012-10-18
申请号：US13169058
申请日：2011-06-27
申请人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
发明人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/42368
摘要： A power LDMOS device including a substrate, source and drain regions, gates and trench insulating structures is provided. The substrate has a finger tip area, a finger body area and a palm area. The source regions are in the substrate in the finger body area and further extend to the finger tip area. The neighboring source regions in the finger tip area are connected. The outmost two source regions further extend to the palm area and are connected. The drain regions are in the substrate in the finger body area and further extend to the palm area. The neighboring drain regions in the palm area are connected. The source and drain regions are disposed alternately. A gate is disposed between the neighboring source and drain regions. The trench insulating structures are in the substrate in the palm area and respectively surround ends of the drain regions.
摘要翻译：提供了包括衬底，源极和漏极区域，栅极和沟槽绝缘结构的功率LDMOS器件。基底具有指尖区域，手指体区域和手掌区域。源区域在手指主体区域中的基底中，并且进一步延伸到指尖区域。指尖区域中的相邻源区域被连接。最远的两个源区域进一步延伸到手掌区域并被连接。漏极区域位于手指主体区域中的基板中，并且进一步延伸到手掌区域。手掌区域中的相邻漏极区域被连接。源区和漏区交替布置。栅极设置在相邻的源区和漏区之间。沟槽绝缘结构位于手掌区域中的基板中，并且分别围绕漏极区域的端部。

4. 发明申请

US20120280317A1 RESURF STRUCTURE AND LDMOS DEVICE 有权
标题翻译： RESURF结构和LDMOS器件
公开(公告)号：US20120280317A1
公开(公告)日：2012-11-08
申请号：US13169052
申请日：2011-06-27
申请人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
发明人： Chung-Yeh Lee , Pei-Hsun Wu , Shiang-Wen Huang
IPC分类号： H01L29/772 , H01L29/06
CPC分类号： H01L29/7817 , H01L21/26586 , H01L29/0634 , H01L29/0649 , H01L29/0696 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7816 , H01L29/7826
摘要： A reduced surface field (RESURF) structure and a lateral diffused metal oxide semiconductor (LDMOS) device including the same are provided. The RESURF structure includes a substrate of a first conductivity type, a deep well region of a second conductivity type, an isolation structure, at least one trench insulating structure, and at least one doped region of the first conductivity type. The deep well region is disposed in the substrate. The isolation structure is disposed on the substrate. The trench insulating structure is disposed in the deep well region below the isolation structure. The doped region is disposed in the deep well region and surrounds a sidewall and a bottom of the trench insulating structure.
摘要翻译：提供减小的表面场（RESURF）结构和包括其的横向扩散金属氧化物半导体（LDMOS）器件。 RESURF结构包括第一导电类型的衬底，第二导电类型的深阱区，隔离结构，至少一个沟槽绝缘结构和至少一个第一导电类型的掺杂区。深井区域设置在基板中。隔离结构设置在基板上。沟槽绝缘结构设置在隔离结构下方的深井区域中。掺杂区域设置在深阱区域中并且包围沟槽绝缘结构的侧壁和底部。

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