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1. 发明授权

US06946158B2 Deposition of titanium amides 失效
标题翻译：沉淀钛酰胺
公开(公告)号：US06946158B2
公开(公告)日：2005-09-20
申请号：US10167084
申请日：2002-06-10
申请人： Matthias J. Jahl , Douglas W. Carson , Shantia Riahi , Raymond Nicholas Vrtis
发明人： Matthias J. Jahl , Douglas W. Carson , Shantia Riahi , Raymond Nicholas Vrtis
IPC分类号： C23C16/448 , C23C16/34 , C23C16/44 , C23C16/452 , H01L21/28 , H01L21/285
CPC分类号： C23C16/34 , C23C16/4402
摘要： The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor. It is shown that addition of small amounts of organic amines enhance the deposition rate of titanium nitride, while the presence of hydrocarbons, such as n-decane, retard the deposition rate of titanium nitride.
摘要翻译：本发明是一种用于增强氮化钛的化学气相沉积的方法，所述钛含氮前体选自四（二甲基氨基）钛，四（二乙基氨基）钛及其混合物，与氨反应生成氮化钛通过加入有机胺如二丙胺的半导体衬底，其范围为约10重量％至10重量％，优选为50重量％至1.0重量％，最优选为100重量份至相对于含钛前体的重量百分比为5000ppm，其中在反应之前，对所述含钛前体进行纯化处理以从含钛前体中除去烃杂质。显示加入少量有机胺可提高氮化钛的沉积速率，而碳氢化合物（如正癸烷）的存在会延缓氮化钛的沉积速率。

2. 发明授权

US06602783B1 Deposition of titanium amides 失效
公开(公告)号：US06602783B1
公开(公告)日：2003-08-05
申请号：US09676426
申请日：2000-09-29
申请人： Matthias J. Jahl , Douglas W. Carson , Shantia Riahi , Raymond Nicholas Vrtis
发明人： Matthias J. Jahl , Douglas W. Carson , Shantia Riahi , Raymond Nicholas Vrtis
IPC分类号： C23C1634
CPC分类号： C23C16/34 , C23C16/4402
摘要： The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor. It is shown that addition of small amounts of organic amines enhance the deposition rate of titanium nitride, while the presence of hydrocarbons, such as n-decane, retard the deposition rate of titanium nitride.

3. 发明授权

US4760263A Ion implant using tetrafluoroborate 失效
标题翻译：离子注入使用四氟硼酸盐
公开(公告)号：US4760263A
公开(公告)日：1988-07-26
申请号：US946784
申请日：1986-12-29
申请人： Andre Lagendijk , Shantia Riahi
发明人： Andre Lagendijk , Shantia Riahi
IPC分类号： H01J27/02
CPC分类号： H01J27/022
摘要： Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.
摘要翻译：金属四氟硼酸盐，特别是碱金属和碱土金属四氟硼酸盐，优选四氟硼酸锂作为离子源材料用硼离子注入半导体材料。

4. 发明授权

US4855604A Ion beam implant system 失效
标题翻译：离子束植入系统
公开(公告)号：US4855604A
公开(公告)日：1989-08-08
申请号：US947914
申请日：1987-03-17
申请人： Shantia Riahi
发明人： Shantia Riahi
IPC分类号： H01J27/02 , H01J37/08 , H01J37/317 , H01J49/04
CPC分类号： H01J27/02 , H01J37/08
摘要： A charge forming system and apparatus for introducing ion source materials into the ion source vaporizer of an ion implant instrument is disclosed.
摘要翻译： PCT No.PCT / US85 / 00929 Sec。 371日期1987年3月17日 102（e）1987年3月17日PCT PCT。1985年5月17日PCT公布。出版物WO86 / 06874 日本公报1986年11月20日。公开了一种用于将离子源材料引入离子注入仪器的离子源蒸发器的电荷形成系统和装置。

5. 发明授权

US4851255A Ion implant using tetrafluoroborate 失效
标题翻译：离子注入使用四氟硼酸盐
公开(公告)号：US4851255A
公开(公告)日：1989-07-25
申请号：US190815
申请日：1988-05-06
申请人： Andre Lagendijk , Shantia Riahi
发明人： Andre Lagendijk , Shantia Riahi
IPC分类号： H01J27/02
CPC分类号： H01L21/26513 , H01J27/022 , H01L21/2658
摘要： Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.
摘要翻译：金属四氟硼酸盐，特别是碱金属和碱土金属四氟硼酸盐，优选四氟硼酸锂作为离子源材料用硼离子注入半导体材料。

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