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1. 发明授权

US08289791B2 Test method and device for memory device 有权
标题翻译：存储设备的测试方法和设备
公开(公告)号：US08289791B2
公开(公告)日：2012-10-16
申请号：US12662270
申请日：2010-04-08
申请人： SeongHwan Moon , Chul-Hoon Byun
发明人： SeongHwan Moon , Chul-Hoon Byun
IPC分类号： G11C29/00
CPC分类号： G11C29/50 , G11C5/144 , G11C29/021 , G11C29/12005 , G11C29/50016 , G11C2029/5002
摘要： Provided is a test method for a memory device including a plurality of storage regions and an SPO recovery unit. The test method stores data in the plurality of storage regions. The test method shuts off supply of power to the memory device and resupplies the power to the memory device. The test method determines an operational state of the SPO recovery unit after the resupplying step based on the stored data.
摘要翻译：提供了一种包括多个存储区域和SPO恢复单元的存储器件的测试方法。测试方法将数据存储在多个存储区域中。该测试方法会关闭存储设备的电源供应，并重新将存储设备的电源重新供电。测试方法基于所存储的数据确定在重新供应步骤之后的SPO恢复单元的操作状态。

2. 发明申请

US20100195418A1 SEMICONDUCTOR MEMORY DEVICE AND SYSTEM 有权
标题翻译：半导体存储器件和系统
公开(公告)号：US20100195418A1
公开(公告)日：2010-08-05
申请号：US12697543
申请日：2010-02-01
申请人： SeongHwan MOON , Jun-Ho JANG
发明人： SeongHwan MOON , Jun-Ho JANG
IPC分类号： G11C7/00 , G11C29/00 , G11C8/00
CPC分类号： G11C16/06 , G06F12/0246 , G06F2212/7203 , G06F2212/7208
摘要： Provided is a semiconductor memory device. The semiconductor memory device includes first and second memory chips and a control logic configured to execute an interleave program between the first and second memory chips. The control logic receives write data to be written into first and second memory blocks of the first memory chip. If the first and second memory blocks are normal blocks, the control logic simultaneously performs a program operation for the first and second memory blocks. If one memory block of the first and second memory blocks is a bad block, the control logic writes the received write data corresponding to the one memory block into a storage circuit.
摘要翻译：提供了一种半导体存储器件。半导体存储器件包括第一和第二存储器芯片以及被配置为在第一和第二存储器芯片之间执行交织程序的控制逻辑。控制逻辑接收要写入第一存储器芯片的第一和第二存储器块的写入数据。如果第一和第二存储器块是正常块，则控制逻辑同时对第一和第二存储器块执行编程操作。如果第一和第二存储器块的一个存储块是坏块，则控制逻辑将接收到的与一个存储器块相对应的写入数据写入存储电路。

3. 发明授权

US08663738B2 Armature for fuel pump and manufacturing method thereof 有权
标题翻译：燃油泵用电枢及其制造方法
公开(公告)号：US08663738B2
公开(公告)日：2014-03-04
申请号：US13024026
申请日：2011-02-09
申请人： Kisang Moon , Seonghwan Moon
发明人： Kisang Moon , Seonghwan Moon
IPC分类号： F04D13/06 , F04D29/00
CPC分类号： H02K3/44 , H02K15/12
摘要： Disclosed herein are an armature for fuel pumps and a manufacturing method thereof, in which a polymer coating film is formed on an armature core such that the armature has corrosion resistance to an alcohol fuel and to a highly corrosive fuel.
摘要翻译：本发明公开了一种用于燃料泵的衔铁及其制造方法，其中聚合物涂膜形成在电枢芯上，使得电枢具有对酒精燃料和高腐蚀性燃料的耐腐蚀性。

4. 发明授权

US08154925B2 Semiconductor memory device and system capable of executing an interleave programming for a plurality of memory chips and a 2-plane programming at the respective memory chips 有权
标题翻译：半导体存储器件和系统能够对各个存储器芯片执行多个存储器芯片的交织编程和2平面编程
公开(公告)号：US08154925B2
公开(公告)日：2012-04-10
申请号：US12697543
申请日：2010-02-01
申请人： SeongHwan Moon , Jun-Ho Jang
发明人： SeongHwan Moon , Jun-Ho Jang
IPC分类号： G11C16/10
CPC分类号： G11C16/06 , G06F12/0246 , G06F2212/7203 , G06F2212/7208
摘要： A semiconductor memory device includes first and second memory chips and a control logic configured to execute an interleave program between the first and second memory chips. The control logic receives write data to be written into first and second memory blocks of the first memory chip. If the first and second memory blocks are normal blocks, the control logic simultaneously performs a program operation for the first and second memory blocks. If one memory block of the first and second memory blocks is a bad block, the control logic writes the received write data corresponding to the one memory block into a storage circuit.
摘要翻译：半导体存储器件包括第一和第二存储器芯片以及被配置为在第一和第二存储器芯片之间执行交织程序的控制逻辑。控制逻辑接收要写入第一存储器芯片的第一和第二存储器块的写入数据。如果第一和第二存储器块是正常块，则控制逻辑同时对第一和第二存储器块执行编程操作。如果第一和第二存储器块的一个存储块是坏块，则控制逻辑将接收到的与一个存储器块相对应的写入数据写入存储电路。

5. 发明申请

US20110032782A1 Test method and device for memory device 有权
标题翻译：存储设备的测试方法和设备
公开(公告)号：US20110032782A1
公开(公告)日：2011-02-10
申请号：US12662270
申请日：2010-04-08
申请人： SeongHwan Moon , Chul-Hoon Byun
发明人： SeongHwan Moon , Chul-Hoon Byun
IPC分类号： G11C29/00 , G11C5/14
CPC分类号： G11C29/50 , G11C5/144 , G11C29/021 , G11C29/12005 , G11C29/50016 , G11C2029/5002
摘要： Provided is a test method for a memory device including a plurality of storage regions and an SPO recovery unit. The test method stores data in the plurality of storage regions. The test method shuts off supply of power to the memory device and resupplies the power to the memory device. The test method determines an operational state of the SPO recovery unit after the resupplying step based on the stored data.
摘要翻译：提供了一种包括多个存储区域和SPO恢复单元的存储器件的测试方法。测试方法将数据存储在多个存储区域中。该测试方法会关闭存储设备的电源供应，并重新将存储设备的电源重新供电。测试方法基于所存储的数据确定在重新供应步骤之后的SPO恢复单元的操作状态。

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