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1. 发明授权

US08367035B2 Methods of making spatially aligned nanotubes and nanotube arrays 有权
标题翻译：制作空间对齐的纳米管和纳米管阵列的方法
公开(公告)号：US08367035B2
公开(公告)日：2013-02-05
申请号：US13596343
申请日：2012-08-28
申请人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
发明人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
IPC分类号： D01F9/127 , C01B31/02
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/162 , C01B2202/02 , C01B2202/08 , C01B2202/34 , H01L51/0012 , H01L51/0048 , H01L51/0541 , H01L51/0545
摘要： The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.
摘要翻译：本发明提供了具有特定位置，纳米管密度和取向的纵向排列的碳纳米管的阵列，以及使用引导生长和引导沉积方法制备纳米管阵列的相应方法。还提供了包括一个或多个纵向排列的碳纳米管阵列的电子器件和器件阵列，其包括多层纳米管阵列结构和器件。

2. 发明申请

US20120321785A1 Methods of Making Spatially Aligned Nanotubes and Nanotube Arrays 有权
标题翻译：制备空间对准的纳米管和纳米管阵列的方法
公开(公告)号：US20120321785A1
公开(公告)日：2012-12-20
申请号：US13596343
申请日：2012-08-28
申请人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
发明人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
IPC分类号： C23C16/26 , C23C16/56 , B82Y40/00 , B82Y30/00
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/162 , C01B2202/02 , C01B2202/08 , C01B2202/34 , H01L51/0012 , H01L51/0048 , H01L51/0541 , H01L51/0545
摘要： The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.
摘要翻译：本发明提供了具有特定位置，纳米管密度和取向的纵向排列的碳纳米管的阵列，以及使用引导生长和引导沉积方法制备纳米管阵列的相应方法。还提供了包括一个或多个纵向排列的碳纳米管阵列的电子器件和器件阵列，其包括多层纳米管阵列结构和器件。

3. 发明授权

US08217381B2 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics 有权
标题翻译：半导体互连中的受控弯曲结构和用于可拉伸电子学的纳米膜
公开(公告)号：US08217381B2
公开(公告)日：2012-07-10
申请号：US11851182
申请日：2007-09-06
申请人： John A. Rogers , Matthew Meitl , Yugang Sun , Heung Cho Ko , Andrew Carlson , Won Mook Choi , Mark Stoykovich , Hanqing Jiang , Yonggang Huang , Ralph G. Nuzzo , Keon Jae Lee , Zhengtao Zhu , Etienne Menard , Dahl-Young Khang , Seong Jun Kang , Jong Hyun Ahn , Hoon-sik Kim
发明人： John A. Rogers , Matthew Meitl , Yugang Sun , Heung Cho Ko , Andrew Carlson , Won Mook Choi , Mark Stoykovich , Hanqing Jiang , Yonggang Huang , Ralph G. Nuzzo , Keon Jae Lee , Zhengtao Zhu , Etienne Menard , Dahl-Young Khang , Seong Jun Kang , Jong Hyun Ahn , Hoon-sik Kim
IPC分类号： H01L29/72
CPC分类号： H01L29/72 , H01L21/02422 , H01L21/02628 , H01L21/4846 , H01L21/8258 , H01L23/5387 , H01L27/12 , H01L29/0657 , H01L2924/12041 , H01L2924/13091 , H05K1/0283 , H05K3/20 , H05K3/22 , H05K2201/0133 , H05K2201/09045 , H05K2203/0271 , H01L2924/00
摘要： In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
摘要翻译：一方面，本发明提供了拉伸，压缩，弯曲或其它变形时能够提供良好性能的可拉伸和可选择的可印刷的部件，例如半导体和电子电路，以及制造或调谐这种可拉伸部件的相关方法。对于一些应用而言，优选的可拉伸半导体和电子电路除了是可拉伸的之外是柔性的，因此能够沿着一个或多个轴显着地伸长，弯曲，弯曲或其它变形。此外，本发明的可拉伸半导体和电子电路适用于宽范围的器件配置，以提供完全灵活的电子和光电器件。

4. 发明授权

US5406505A Method of and apparatus for measuring energy gap of semiconductor 失效
标题翻译：测量半导体能隙的方法和装置
公开(公告)号：US5406505A
公开(公告)日：1995-04-11
申请号：US994593
申请日：1992-12-15
申请人： Seong-Jun Kang , Bo-Woo Kim , Yil-Sung Bae
发明人： Seong-Jun Kang , Bo-Woo Kim , Yil-Sung Bae
IPC分类号： G01N21/35 , G01N21/62
CPC分类号： G01N21/3563
摘要： A method and apparatus is disclosed for measuring an energy gap of a semiconductor material. The method contains the steps of analyzing a character of a reference semiconductor sample and setting an energy gap pixel value, estimating a transfer function between the pixel value, positioning the sample properly and imaging the spectrum to obtain a live image, storing the live image and scanning the respective pixel values along an x-axis of the image, sequentially comparing the respective pixel value and the energy gap pixel value, reading an x-coordinate of the pixel and converting the wavelength of the pixel to estimate the energy gap. The apparatus optically measures the energy gap and comprises a light source irradiating a light beam, a lens for focusing the light beam, a polychromator for irradiating the spectrum of light of the light beam to the sample, optical filters for evaluating a spectrum band of the polychromator into wavelength values, an image acquisition apparatus, an image signal processor, an energy gap detecting and displaying apparatus, and a computer for executing operation and control functions necessary to measure the energy gap by use of the image signal processor and the energy gap detecting and displaying apparatus.
摘要翻译：公开了一种用于测量半导体材料的能隙的方法和装置。该方法包括以下步骤：分析参考半导体样本的字符并设置能隙像素值，估计像素值之间的传递函数，适当地定位样本并成像光谱以获得实时图像，存储实时图像;以及沿着图像的x轴扫描各个像素值，顺序地比较各个像素值和能隙像素值，读取像素的x坐标并转换像素的波长以估计能隙。该设备光学测量能隙并包括照射光束的光源，用于聚焦光束的透镜，用于将光束的光束照射到样品的多色分光器，用于评估光束的光谱带的光学滤光器多色分光子变为波长值，图像采集装置，图像信号处理器，能隙检测和显示装置，以及用于执行通过使用图像信号处理器和能隙检测来测量能隙所需的操作和控制功能的计算机和显示装置。

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