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1. 发明公开

US20240292697A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20240292697A1
公开(公告)日：2024-08-29
申请号：US18689899
申请日：2022-09-05
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masahiro KATAYAMA , Yukinori SHIMA , Masataka NAKADA , Shingo EGUCHI , Daiki NAKAMURA , Koji KUSUNOKI
IPC分类号： H10K59/32 , G09G3/3233 , H10K59/131 , H10K59/38 , H10K59/80
CPC分类号： H10K59/32 , H10K59/131 , H10K59/38 , H10K59/805 , G09G3/3233 , G09G2300/0814 , G09G2300/0842 , G09G2320/0223
摘要： A display device in which a voltage drop is inhibited adequately is provided. The display device includes a first light-emitting device including a first light-emitting layer, a first charge-generation layer over the first light-emitting layer, and a second light-emitting layer over the first charge-generation layer; a first color filter overlapping with the first light-emitting device; a second light-emitting device including a third light-emitting layer, a second charge-generation layer over the third light-emitting layer, and a fourth light-emitting layer over the second charge-generation layer; a second color filter overlapping with the second light-emitting device; a common electrode included in the first light-emitting device and the second light-emitting device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring includes a first wiring layer and a second wiring layer, the second wiring layer is electrically connected to the first wiring layer through a contact hole of an insulating layer, and the second wiring layer has a lattice shape in a top view.

2. 发明公开

US20240292669A1 DISPLAY APPARATUS AND METHOD FOR MANUFACTURING DISPLAY APPARATUS 审中-公开
公开(公告)号：US20240292669A1
公开(公告)日：2024-08-29
申请号：US18569769
申请日：2022-06-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shinya SASAGAWA , Ryota HODO , Kentaro SUGAYA , Yoshikazu HIURA , Takahiro FUJIE
IPC分类号： H10K59/122 , H10K59/12
CPC分类号： H10K59/122 , H10K59/1201
摘要： A display apparatus having high display quality is provided. The display apparatus includes a first pixel, a second pixel, a first insulating layer, and a second insulating layer over the first insulating layer; the first pixel includes a first pixel electrode, a first EL layer covering the first pixel electrode, a third insulating layer over the first EL layer, and a common electrode over the first EL layer and the third insulating layer; the second pixel includes a second pixel electrode, a second EL layer covering the second pixel electrode, a fourth insulating layer over the second EL layer, and the common electrode over the second EL layer and the fourth insulating layer; the first insulating layer and the third insulating layer each include a first protruding portion over the first pixel electrode; the first protruding portion is positioned outward from an end portion of the second insulating layer; the first insulating layer and the fourth insulating layer each include a second protruding portion over the second pixel electrode; the second protruding portion is positioned outward from an end portion of the second insulating layer; a side surface of the first protruding portion and a side surface of the second protruding portion each have a tapered shape in a cross-sectional view of the display apparatus.

3. 发明公开

US20240292648A1 Light-Emitting Device, Light-Emitting Apparatus, Electronic Device, and Lighting Device 审中-公开
公开(公告)号：US20240292648A1
公开(公告)日：2024-08-29
申请号：US18645743
申请日：2024-04-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Satoshi SEO , Hiromi SEO , Kunihiko SUZUKI , Kanta ABE , Yuji IWAKI , Naoaki HASHIMOTO , Tsunenori SUZUKI
IPC分类号： H10K50/16 , H10K50/11 , H10K50/15 , H10K50/17 , H10K50/81 , H10K50/82 , H10K59/00 , H10K85/30 , H10K101/40
CPC分类号： H10K50/16 , H10K50/11 , H10K50/15 , H10K50/171 , H10K50/81 , H10K50/82 , H10K59/00 , H10K85/321 , H10K2101/40
摘要： A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

4. 发明公开

US20240290252A1 DISPLAY APPARATUS, ITS OPERATING METHOD, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240290252A1
公开(公告)日：2024-08-29
申请号：US18655975
申请日：2024-05-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Susumu KAWASHIMA , Koji KUSUNOKI , Kazunori WATANABE , Satoshi YOSHIMOTO
IPC分类号： G09G3/32 , H10K59/131
CPC分类号： G09G3/32 , H10K59/131 , G09G2300/0819 , G09G2300/0842 , G09G2310/02 , G09G2310/08 , G09G2330/021
摘要： A display apparatus having a wide range of threshold voltage compensation function is provided. In the display apparatus, a p-channel transistor is used as a driving transistor of the light-emitting device. Discharging is performed through a source-drain path while constant voltage is supplied to a gate so that Vth is extracted between the gate and the source. In addition, when a drain potential is set to the sum of forward voltage and a cathode potential of the light-emitting device or a potential sufficiently lower than the sum, it is possible to continue the discharging even when Vth is positive voltage. That is, compensation can be performed even in the case where Vth variation occurs from positive voltage to negative voltage.

5. 发明授权

US12074224B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US12074224B2
公开(公告)日：2024-08-27
申请号：US17591690
申请日：2022-02-03
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yoshinobu Asami , Yutaka Okazaki , Satoru Okamoto , Shinya Sasagawa
IPC分类号： H01L29/786 , C23C16/40 , C23C16/455 , H01L21/475 , H01L21/4757 , H01L21/67 , H01L27/12 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/66 , H01L21/02
CPC分类号： H01L29/7869 , C23C16/40 , C23C16/45531 , H01L21/475 , H01L21/47573 , H01L21/67207 , H01L27/1207 , H01L27/1225 , H01L29/0649 , H01L29/41733 , H01L29/42356 , H01L29/42376 , H01L29/42384 , H01L29/66969 , H01L29/78603 , H01L29/78618 , H01L29/78696 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要： A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

6. 发明公开

US20240284766A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240284766A1
公开(公告)日：2024-08-22
申请号：US18569497
申请日：2022-06-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Nobuharu OHSAWA , Takumu OKUYAMA , Satoshi SEO
IPC分类号： H10K59/80 , H10K59/131
CPC分类号： H10K59/878 , H10K59/131
摘要： A novel display device that is highly convenient, useful, or reliable is provided. The display device includes a first light-emitting device, a second light-emitting device, an insulating film, a conductive film, a first reflective film, and a second reflective film; the first light-emitting device includes a first electrode, a second electrode, and a first unit; and the first electrode is interposed between the first unit and the insulating film. The second light-emitting device includes a third electrode, a fourth electrode, and a second unit; the third electrode is interposed between the second unit and the insulating film; and a first gap is provided between the third electrode and the first electrode. The conductive film electrically connects the second electrode and the fourth electrode to each other, and the first gap is interposed between the conductive film and the insulating film. The first reflective film is interposed between the first electrode and the insulating film, and there is a first distance DR between the first reflective film and the second electrode. The second reflective film is interposed between the third electrode and the insulating film, and there is a second distance DG between the second reflective film and the fourth electrode. The second distance DG is longer than the first distance DR and the difference is larger than 20 nm and smaller than 85 nm.

7. 发明公开

US20240284674A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240284674A1
公开(公告)日：2024-08-22
申请号：US18586866
申请日：2024-02-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Hajime KIMURA , Takanori MATSUZAKI , Kiyoshi KATO , Satoru OKAMOTO
IPC分类号： H10B43/27 , H01L29/24 , H01L29/51 , H10B43/10 , H10B43/35 , H10B43/40 , H10B43/50
CPC分类号： H10B43/27 , H10B43/10 , H10B43/35 , H10B43/40 , H10B43/50 , H01L29/24 , H01L29/513
摘要： A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

8. 发明授权

US12068198B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US12068198B2
公开(公告)日：2024-08-20
申请号：US17605187
申请日：2020-04-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Tsutomu Murakawa , Shinya Sasagawa , Naoto Yamade , Takashi Hamada , Hiroki Komagata
IPC分类号： H01L21/8234 , H01L21/225 , H01L21/28 , H01L29/66 , H01L27/088 , H01L29/786
CPC分类号： H01L21/823412 , H01L21/2253 , H01L21/28185 , H01L29/6675 , H01L27/088 , H01L29/7869 , H01L29/78696
摘要： To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and a second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

9. 发明公开

US20240274696A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20240274696A1
公开(公告)日：2024-08-15
申请号：US18606052
申请日：2024-03-15
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei YAMAZAKI , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA , Masashi TSUBUKU
IPC分类号： H01L29/66 , H01L21/02 , H01L27/12 , H01L27/146 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/02565 , H01L27/1225 , H01L27/127 , H01L27/14616 , H01L27/14689 , H01L29/7869 , H01L29/78696
摘要： The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

10. 发明公开

US20240274627A1 Image Detection Module and Information Management System 审中-公开
公开(公告)号：US20240274627A1
公开(公告)日：2024-08-15
申请号：US18644613
申请日：2024-04-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takahiro FUKUTOME , Hiromichi GODO
IPC分类号： H01L27/146 , G01J1/42 , G01K13/00 , G06F18/214 , G06N3/04 , G06N3/08 , G06V10/147 , G06V10/44 , G06V10/82 , G06V10/94 , G06V20/68 , H04N25/75 , H04N25/77
CPC分类号： H01L27/14612 , G06F18/214 , G06N3/04 , G06N3/08 , G06V10/147 , G06V10/454 , G06V10/82 , G06V10/95 , H04N25/75 , H04N25/77 , G01J1/42 , G01K13/00 , G06V20/68
摘要： Environmental information is managed by a neural network.
An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.

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