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1. 发明申请

US20160276341A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20160276341A1
公开(公告)日：2016-09-22
申请号：US14974805
申请日：2015-12-18
申请人： Jung-Gun YOU , Se-Wan PARK , Baik-Min SUNG , Myung-Yoon UM
发明人： Jung-Gun YOU , Se-Wan PARK , Baik-Min SUNG , Myung-Yoon UM
IPC分类号： H01L27/088 , H01L29/78 , H01L29/423 , H01L29/06
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823456 , H01L27/0207 , H01L27/1104 , H01L29/0657 , H01L29/42356 , H01L29/785 , H01L29/7854
摘要： A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.
摘要翻译：提供半导体器件。半导体器件可以包括在基板上的场绝缘膜，形成在基板上并从场绝缘膜的上表面向上突出的第一鳍型图案和与第一鳍型图案相交的栅极电极场绝缘膜。栅电极可以包括第一部分和第二部分，第一部分位于第一鳍型图案的一侧，并且包括栅电极的第一末端，而第二部分位于第二部分的另一侧第一鳍型图案。从基板到第一部分的最低部分的高度可以不同于从基板到第二部分的最低部分的高度。

2. 发明申请

US20120172394A1 PHARMACEUTICAL COMPOSITION FOR PREVENTING OR TREATING RHEUMATOID ARTHRITIS, CONTAINING REBAMIPIDE 有权
标题翻译：用于预防或治疗含有雷贝匹丁的湿疹风湿性关节炎药物组合物
公开(公告)号：US20120172394A1
公开(公告)日：2012-07-05
申请号：US13392197
申请日：2009-10-08
申请人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
发明人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
IPC分类号： A61K31/4704 , A61P29/00
CPC分类号： A61K31/4704
摘要： The present invention provides a pharmaceutical composition for preventing or treating rheumatoid arthritis comprising rebamipide as an active ingredient and a pharmaceutically acceptable carrier. The pharmaceutical composition may be for oral administration, for example an oral solid dosage form of a tablet or capsule form. The pharmaceutical composition may be formulated into a unit dosage form suitable for orally administering rebamipide in a dose ranging from 0.5 to 50 mg/kg, preferably from 0.6 to 6 mg/kg.
摘要翻译：本发明提供了一种用于预防或治疗类风湿性关节炎的药物组合物，其包含瑞巴派特作为活性成分和药学上可接受的载体。药物组合物可用于口服给药，例如片剂或胶囊形式的口服固体剂型。药物组合物可以配制成适于以0.5至50mg / kg，优选0.6至6mg / kg的剂量口服施用瑞巴派特的单位剂型。

3. 发明申请

US20160218180A1 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS 有权
标题翻译：用于制造具有精细形状图案的半导体器件的方法
公开(公告)号：US20160218180A1
公开(公告)日：2016-07-28
申请号：US14968999
申请日：2015-12-15
申请人： Jung-Gun You , Se-Wan PARK , Seung-Woo DO , In-Won PARK , Sug-Hyun SUNG
发明人： Jung-Gun You , Se-Wan PARK , Seung-Woo DO , In-Won PARK , Sug-Hyun SUNG
IPC分类号： H01L29/10 , H01L29/417 , H01L21/762 , H01L29/66
CPC分类号： H01L29/66545 , H01L21/30604 , H01L21/3085 , H01L21/76224 , H01L29/165 , H01L29/41766 , H01L29/66795 , H01L29/6681 , H01L29/66818 , H01L29/7848 , H01L29/785
摘要： A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.
摘要翻译：提供一种制造半导体器件的方法。该方法包括在衬底上形成包括上部和下部的第一鳍状图案，通过去除第一鳍状图案的上部的一部分形成第二鳍状图案，形成虚拟栅电极与第二鳍状图案上的第二鳍状图案相交，并且在形成虚拟栅电极之后，通过去除第二鳍状图案的上部的一部分来形成第三鳍状图案，其中宽度第二鳍状图案的上部小于第一鳍状图案的上部的宽度，并且大于第三鳍状图案的上部的宽度。

4. 发明授权

US08691842B2 Pharmaceutical composition for preventing or treating rheumatoid arthritis, containing rebamipide 有权
标题翻译：用于预防或治疗类风湿性关节炎的药物组合物，含有瑞巴派特
公开(公告)号：US08691842B2
公开(公告)日：2014-04-08
申请号：US13392197
申请日：2009-10-08
申请人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
发明人： Jun-Ki Min , Mi-La Cho , Yun-Ju Woo , Hye-Jwa Oh , Joo-Yeon Jhun , Geun-Hyeog Lee , Se-Wan Park , Jin-Ha Park , Eun-Young Kwak
IPC分类号： A01N43/42 , A61K31/47 , A61K9/14 , A01N43/06 , A61K31/38
CPC分类号： A61K31/4704
摘要： The present invention provides a pharmaceutical composition for preventing or treating rheumatoid arthritis comprising rebamipide as an active ingredient and a pharmaceutically acceptable carrier. The pharmaceutical composition may be for oral administration, for example an oral solid dosage form of a tablet or capsule form. The pharmaceutical composition may be formulated into a unit dosage form suitable for orally administering rebamipide in a dose ranging from 0.5 to 50 mg/kg, preferably from 0.6 to 6 mg/kg.
摘要翻译：本发明提供了一种用于预防或治疗类风湿性关节炎的药物组合物，其包含瑞巴派特作为活性成分和药学上可接受的载体。药物组合物可用于口服给药，例如片剂或胶囊形式的口服固体剂型。药物组合物可以配制成适于以0.5至50mg / kg，优选0.6至6mg / kg的剂量口服施用瑞巴派特的单位剂型。

5. 发明授权

US09673330B2 Integrated circuit devices and methods of manufacturing the same 有权
公开(公告)号：US09673330B2
公开(公告)日：2017-06-06
申请号：US14965982
申请日：2015-12-11
申请人： Jae-yup Chung , Yoon-seok Lee , Hyun-jo Kim , Hwa-sung Rhee , Hee-don Jeong , Se-wan Park , Bo-cheol Jeong
发明人： Jae-yup Chung , Yoon-seok Lee , Hyun-jo Kim , Hwa-sung Rhee , Hee-don Jeong , Se-wan Park , Bo-cheol Jeong
IPC分类号： H01L29/78 , H01L29/06 , H01L27/092 , H01L29/10 , H01L29/08 , H01L29/417 , H01L21/8238
CPC分类号： H01L21/823481 , H01L21/8232 , H01L21/823412 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L21/823878 , H01L27/0886 , H01L27/0924 , H01L27/10879 , H01L29/0649 , H01L29/0843 , H01L29/1033 , H01L29/41791 , H01L29/785
摘要： An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalk of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalk of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

6. 发明授权

US09620406B2 Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns 有权
公开(公告)号：US09620406B2
公开(公告)日：2017-04-11
申请号：US14968999
申请日：2015-12-15
申请人： Jung-Gun You , Se-Wan Park , Seung-Woo Do , In-Won Park , Sug-Hyun Sung
发明人： Jung-Gun You , Se-Wan Park , Seung-Woo Do , In-Won Park , Sug-Hyun Sung
IPC分类号： H01L21/762 , H01L29/66 , H01L29/417 , H01L29/78 , H01L29/165
CPC分类号： H01L29/66545 , H01L21/30604 , H01L21/3085 , H01L21/76224 , H01L29/165 , H01L29/41766 , H01L29/66795 , H01L29/6681 , H01L29/66818 , H01L29/7848 , H01L29/785
摘要： A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.

7. 发明申请

US20160204106A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160204106A1
公开(公告)日：2016-07-14
申请号：US14989876
申请日：2016-01-07
申请人： Jung-Gun YOU , Sug-Hyun SUNG , Se-Wan PARK
发明人： Jung-Gun YOU , Sug-Hyun SUNG , Se-Wan PARK
IPC分类号： H01L27/088 , H01L29/423 , H01L29/06
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/0657 , H01L29/42376
摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a fin which comprises long sides and a first short side, a first trench which is immediately adjacent the first short side of the fin and has a first depth, a second trench which is immediately adjacent the first trench and has a second depth greater than the first depth, a first protrusion structure which protrudes from a bottom of the first trench and extends side by side with the first short side, and a gate which is formed on the first protrusion structure to extend side by side with the first short side.
摘要翻译：提供半导体器件及其制造方法。该半导体器件包括一个翅片，它包括长边和第一短边，第一沟槽紧邻翅片的第一短边并且具有第一深度，第二沟槽紧邻第一沟槽并具有第二沟槽深度大于第一深度的第一突出结构，从第一沟槽的底部突出并与第一短边并排延伸的第一突起结构，以及形成在第一突起结构上并与第一突起并排延伸的第一突起结构短边

8. 发明申请

US20160163877A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160163877A1
公开(公告)日：2016-06-09
申请号：US14953769
申请日：2015-11-30
申请人： Jae-Yup Chung , Hee-Soo Kang , Hee-Don Jeong , Se-Wan Park
发明人： Jae-Yup Chung , Hee-Soo Kang , Hee-Don Jeong , Se-Wan Park
IPC分类号： H01L29/786
CPC分类号： H01L29/7848 , H01L27/0886 , H01L29/785
摘要： A semiconductor device includes a first multi-channel active pattern, a field insulation layer disposed on the first multi-channel active pattern and including a first region and a second region, the first region having a top surface protruding from a top surface of the second region to a top surface of the first multi-channel active pattern, a first gate electrode crossing the first multi-channel active pattern, the first gate electrode being disposed on the field insulation layer, and a first source or drain disposed between the first gate electrode and the first region of the field insulation layer and including a first facet, the first facet being disposed adjacent to the first region of the field insulation layer at a point lower than the top surface of the first multi-channel active pattern.
摘要翻译：半导体器件包括第一多通道有源图案，设置在第一多通道有源图案上并包括第一区域和第二区域的场绝缘层，第一区域具有从第二多通道有源图案的顶表面突出的顶表面区域到第一多通道有源图案的顶表面，与第一多通道有源图案交叉的第一栅电极，设置在场绝缘层上的第一栅极电极和设置在第一栅极之间的第一栅极或漏极电极和场绝缘层的第一区域并且包括第一小面，第一面在比第一多通道活性图案的顶表面低的点处邻近场绝缘层的第一区域设置。

9. 发明申请

US20160247876A1 Integrated Circuit Devices and Methods of Manufacturing the Same 有权
标题翻译：集成电路器件及其制造方法
公开(公告)号：US20160247876A1
公开(公告)日：2016-08-25
申请号：US14965982
申请日：2015-12-11
申请人： Jae-yup Chung , Yoon-seok LEE , Hyun-jo KIM , Hwa-sung RHEE , Hee-don JEONG , Se-wan PARK , Bo-cheol JEONG
发明人： Jae-yup Chung , Yoon-seok LEE , Hyun-jo KIM , Hwa-sung RHEE , Hee-don JEONG , Se-wan PARK , Bo-cheol JEONG
IPC分类号： H01L29/06 , H01L29/417 , H01L29/10 , H01L29/08 , H01L27/092 , H01L29/78
CPC分类号： H01L21/823481 , H01L21/8232 , H01L21/823412 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L21/823878 , H01L27/0886 , H01L27/0924 , H01L27/10879 , H01L29/0649 , H01L29/0843 , H01L29/1033 , H01L29/41791 , H01L29/785
摘要： An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalk of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalk of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.
摘要翻译：集成电路器件包括具有不同导电类型沟道区的第一和第二鳍式有源区，覆盖第一鳍式有源区的人行道的第一器件隔离层和覆盖第二鳍的两侧壁的第二器件隔离层型活性区。第一器件隔离层和第二器件隔离层具有不同的堆叠结构。为了制造集成电路器件，覆盖第一鳍式有源区的两个侧壁的第一器件隔离层和覆盖第二鳍式有源区的人行道的第二器件隔离层在第一鳍式有源区并形成第二鳍型有源区。第一器件隔离层和第二器件隔离层形成为具有不同的堆叠结构。

10. 发明申请

US20160211379A1 SEMICONDUCTOR DEVICE HAVING ASYMMETRIC FIN-SHAPED PATTERN 有权
标题翻译：具有不对称精细形状图案的半导体器件
公开(公告)号：US20160211379A1
公开(公告)日：2016-07-21
申请号：US14983904
申请日：2015-12-30
申请人： Jung-Gun You , Se-Wan Park , Baik-Min Sung , Bo-Cheol Jeong
发明人： Jung-Gun You , Se-Wan Park , Baik-Min Sung , Bo-Cheol Jeong
IPC分类号： H01L29/78 , H01L29/06 , H01L27/088
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/7851 , H01L29/7853 , H01L29/7854
摘要： Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.
摘要翻译：提供半导体器件，其包括具有彼此面对的第一和第二侧壁的第一鳍状图案和与第一鳍状图案的至少一部分接触的场绝缘膜。第一鳍状图案包括与场绝缘膜接触的第一鳍状图案的下部; 所述第一鳍状图案的上部不与所述场绝缘膜接触; 第一鳍状图案的下部与第一鳍状图案的上部之间的第一边界; 以及垂直于第一边界并且满足第一鳍状图案的上部的顶部的第一鳍中心线。第一鳍状图案的上部的第一侧壁和第一鳍状图案的上部的第二侧壁相对于第一翅片中心线是不对称的。

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