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1. 发明授权

US07473571B2 Method for manufacturing vertically structured light emitting diode 有权
标题翻译：制造垂直结构发光二极管的方法
公开(公告)号：US07473571B2
公开(公告)日：2009-01-06
申请号：US11541674
申请日：2006-10-03
申请人： Hae Yeon Hwang , Yung Ho Ryu , Da Mi Shim , Se Hwan Ahn
发明人： Hae Yeon Hwang , Yung Ho Ryu , Da Mi Shim , Se Hwan Ahn
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.
摘要翻译：提供了一种制造能够容易地进行芯片分离处理的垂直结构的LED的方法。在该方法中，在具有多个器件区域和至少一个器件隔离区域的生长衬底上形成发光结构，其中，所述发光结构体具有n型覆盖层，有源层和p- 型覆盖层依次设置在生长基板上。在发光结构上形成p电极。此后，在p电极上形成第一镀层，使得它连接多个器件隔离区。在器件区域的第一镀层上形成第二镀层的图案。去除生长衬底，然后在n型覆盖层上形成n电极。

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