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    • 9. 发明申请
    • Roller stand
    • 滚筒架
    • US20050077141A1
    • 2005-04-14
    • US10963866
    • 2004-10-12
    • Robin LeeSteven JonesScott Roger
    • Robin LeeSteven JonesScott Roger
    • B65G13/12B65G13/00
    • B23Q3/105B65G13/12
    • An out-feed roller support stand having a sturdy, stable base that folds for compact storage. A support mast that telescopes into and is adjustable within the base supports a work support head that includes an adjustable cross bar on which a row of pivoting caster wheels are mounted. An alternative embodiment includes a ramp for guiding sagging ends of work-pieces up onto the caster wheels. Both the height and angle between the adjustable cross bar and floor are adjustable after the position of the support mast has been adjusted in order to position the support head in roughly the correct location.
    • 出料辊支撑架具有坚固,稳定的基座,可折叠紧凑的储存空间。 在基座内伸缩并可调节的支撑杆支撑工件支承头,该工件支承头包括一个可调节的横杆,一排枢转脚轮安装在该横杆上。 替代实施例包括用于将工件的下垂端引导到脚轮上的斜坡。 在调节支撑桅杆的位置以便将支撑头定位在大致正确的位置之后,可调节横杆和地板之间的高度和角度都是可调节的。
    • 10. 发明申请
    • APPARATUS AND METHOD FOR SELECTIVE OXIDATION AT LOWER TEMPERATURE USING REMOTE PLASMA SOURCE
    • 使用远程等离子体源在较低温度下选择性氧化的装置和方法
    • US20140034632A1
    • 2014-02-06
    • US13869208
    • 2013-04-24
    • Heng PANMatthew Scott ROGERAgus S. TJANDRAChristopher S. OLSEN
    • Heng PANMatthew Scott ROGERAgus S. TJANDRAChristopher S. OLSEN
    • H01L21/02
    • H01L21/02238H01L21/02068H01L21/02164H01L21/02252
    • Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.
    • 本文描述了用于选择性氧化硅的装置和方法。 用于暴露的硅表面的选择性氧化的设备包括具有多个壁的热处理室,第一入口连接和第二入口连接,其中壁限定处理室内的处理区域,处理室内的衬底支撑件, 与第一入口连接的氢源,与氢源连接的热源以及与第二入口连接和氧源连接的远程等离子体源。 用于非金属表面的选择性氧化的方法可以包括将基底定位在温度低于800℃的处理室中,将氢气流入处理室,产生包含氧气的远程等离子体,将远程等离子体与 处理室中的氢气以产生活化的处理气体,并将基底暴露于活化气体。