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    • 2. 发明授权
    • Organic EL element, display apparatus, and light-emitting apparatus
    • 有机EL元件,显示装置和发光装置
    • US08664669B2
    • 2014-03-04
    • US13360984
    • 2012-01-30
    • Satoru OhuchiHirofumi FujitaShinya Fujimura
    • Satoru OhuchiHirofumi FujitaShinya Fujimura
    • H01L27/32
    • H01L51/5088H01L2251/55
    • An organic EL element has an anode, a cathode, a hole injection layer and at least one functional layer disposed between the anode and the cathode. The at least one functional layer contains an organic material. Holes are injected into the functional layer from the hole injection layer, which contains a tungsten oxide. A Ultraviolet Photoelectron Spectroscopy (UPS) spectrum obtained from a UPS measurement has a protrusion near a Fermi surface and within a region corresponding to a binding energy range lower than a top of the valence band. The tungsten oxide contained in the hole injection layer satisfies a condition, determined from an X-ray Photoelectronic Spectroscopy measurement, that a ratio in a number density of atoms other than tungsten and oxygen atoms to the tungsten atoms does not exceed approximately 0.83.
    • 有机EL元件具有阳极,阴极,空穴注入层和设置在阳极和阴极之间的至少一个功能层。 所述至少一个功能层含有有机材料。 从包含氧化钨的空穴注入层将孔注入功能层。 从UPS测量获得的紫外光电子能谱(UPS)光谱在费米面附近具有突起,并且在与低于价带顶部的结合能范围相对应的区域内。 包含在空穴注入层中的氧化钨满足从X射线光电子能谱测定确定的钨原子和氧原子之间的原子数与钨原子之间的比率不超过约0.83的条件。
    • 6. 发明申请
    • ORGANIC LIGHT-EMITTING ELEMENT
    • 有机发光元件
    • US20140145172A1
    • 2014-05-29
    • US14128727
    • 2011-07-15
    • Ryuuta YamadaSatoru OhuchiTakahiro KomatsuShinya FujimuraHirofumi Fujita
    • Ryuuta YamadaSatoru OhuchiTakahiro KomatsuShinya FujimuraHirofumi Fujita
    • H01L51/50H01L51/56
    • H01L51/5088H01L51/5215H01L51/56H01L2251/303
    • An organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.
    • 包括阳极,空穴注入层,缓冲层,发光层和阴极的有机EL元件,按照所述顺序层叠在基板上,以及限定发光区域的堤,并且具有优异的发光特性,由于 在预定条件下形成具有优异的空穴注入效率的空穴注入层,所述空穴注入层是包含氧空位结构的氧化钨层,以使其占据能级在1.8eV至3.6eV以下的结合能范围内,低于化合价的最低结合能 并且在形成之后,在200℃-230℃的温度范围内进行大气烧制,其中包括处理时间为15-45分钟,以提高膜密度和改善对蚀刻溶液的耐溶解性,清洗 液体等,用于银行形成过程。