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    • 9. 发明授权
    • Electron emission device
    • 电子发射装置
    • US07279830B2
    • 2007-10-09
    • US11068067
    • 2005-02-26
    • Sang-Jo LeeChun-Gyoo LeeSang-Hyuck AhnSu-Bong HongByong-Gon LeeSang-Ho JeonYong-Soo Choi
    • Sang-Jo LeeChun-Gyoo LeeSang-Hyuck AhnSu-Bong HongByong-Gon LeeSang-Ho JeonYong-Soo Choi
    • H01J1/304H01J1/46
    • H01J3/022
    • An electron emission device includes gate electrodes formed on a substrate. The gate electrodes are located on a first plane. An insulating layer is formed on the gate electrodes. Cathode electrodes are formed on the insulating layer. Electron emission regions are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(μm)≦D≦28.1553+1.7060t(μm), where t indicates a thickness of the insulating layer.
    • 电子发射器件包括形成在衬底上的栅电极。 栅电极位于第一平面上。 在栅电极上形成绝缘层。 阴极电极形成在绝缘层上。 电子发射区域电连接到阴极电极。 电子发射区位于第二平面上。 此外,电子发射装置包括基本上放置在电子发射区的第二平面上的相对电极。 栅电极和对电极用于接收相同的电压,并且至少一个电子发射区域和至少一个相对电极之间的距离D满足以下条件:1(mum)<= D < = 28.1553 + 1.7060t(mum),其中t表示绝缘层的厚度。