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1. 发明申请

US20070273030A1 Semiconductor device having metal lines with slits 有权
标题翻译：具有狭缝的金属线的半导体装置
公开(公告)号：US20070273030A1
公开(公告)日：2007-11-29
申请号：US11882805
申请日：2007-08-06
申请人： Sang-Hyun Yi , Young-Nam Kim
发明人： Sang-Hyun Yi , Young-Nam Kim
IPC分类号： H01L23/522
CPC分类号： H01L23/562 , H01L21/8221 , H01L23/528 , H01L23/585 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/1112 , H01L27/115 , H01L27/11521 , H01L27/11551 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.
摘要翻译：包括半导体衬底，半导体衬底上的集成电路，覆盖集成电路的绝缘层和绝缘层上的多个金属线图案的半导体器件。多个金属线图案的第一和第二相邻的金属线图案彼此间隔一个间隔，并且第一和第二相邻金属线图案中的每一个具有至少一个狭缝。

2. 发明申请

US20130133778A1 INCUBATING CONTAINER AND SAMPLE INJECTION METHOD THEREFOR 审中-公开
标题翻译：泄漏容器和样品注射方法
公开(公告)号：US20130133778A1
公开(公告)日：2013-05-30
申请号：US13588800
申请日：2012-08-17
申请人： Sang Hyun YI , Dong Woo LEE , Jeong Suong YANG , Bo Sung KU
发明人： Sang Hyun YI , Dong Woo LEE , Jeong Suong YANG , Bo Sung KU
IPC分类号： C12M1/00 , B65B3/04 , C12M1/12
CPC分类号： C12M29/02 , C12M23/12
摘要： There are provided an incubating container capable of preventing bubble generation within a cell incubating container when a sample is injected into the container, and a sample injection method therefor. The incubating container includes: a plurality of wells to be filled with a sample through an injection of the sample; and at least one bubble discharge hole formed as a hole penetrating through a bottom of each of the plurality of wells, and discharging, to the outside, bubbles generated when the sample is injected into the plurality of wells.
摘要翻译：提供了一种能够防止在将样品注入容器时细胞孵育容器内产生气泡的培养容器及其注射方法。孵化容器包括：通过注射样品而填充样品的多个孔; 以及至少一个气泡排出孔，其形成为穿透多个孔中的每一个的底部的孔，并且将样品注入多个孔时产生的气泡排出到外部。

3. 发明申请

US20120309649A1 CELL CHIP AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：细胞芯片及其制造方法
公开(公告)号：US20120309649A1
公开(公告)日：2012-12-06
申请号：US13482316
申请日：2012-05-29
申请人： Dong Woo LEE , Sang Hyun Yi , Bo Sung Ku
发明人： Dong Woo LEE , Sang Hyun Yi , Bo Sung Ku
IPC分类号： C40B40/02 , C40B50/06
CPC分类号： C40B60/12 , B01J2219/00509 , B01J2219/00743
摘要： Disclosed herein are a cell chip and a method for manufacturing the same. The cell chip may include: a substrate; and a first contact member disposed on the substrate, wherein a top end of the first contact member is provided with a first inclined contact surface inclined with respect to the substrate.
摘要翻译：本文公开了一种电池芯片及其制造方法。电池芯片可以包括：基板; 以及设置在所述基板上的第一接触构件，其中，所述第一接触构件的顶端设置有相对于所述基板倾斜的第一倾斜接触面。

4. 发明申请

US20110068474A1 SEMICONDUCTOR DEVICE HAVING METAL LINES WITH SLITS 有权
标题翻译：具有锯齿的金属线的半导体器件
公开(公告)号：US20110068474A1
公开(公告)日：2011-03-24
申请号：US12958287
申请日：2010-12-01
申请人： SANG-HYUN YI , Young-Nam Kim
发明人： SANG-HYUN YI , Young-Nam Kim
IPC分类号： H01L23/485
CPC分类号： H01L23/562 , H01L21/8221 , H01L23/528 , H01L23/585 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/1112 , H01L27/115 , H01L27/11521 , H01L27/11551 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.
摘要翻译：包括半导体衬底，半导体衬底上的集成电路，覆盖集成电路的绝缘层和绝缘层上的多个金属线图案的半导体器件。多个金属线图案的第一和第二相邻的金属线图案彼此间隔一个间隔，并且第一和第二相邻金属线图案中的每一个具有至少一个狭缝。

5. 发明授权

US07847403B2 Semiconductor device having no cracks in one or more layers underlying a metal line layer 有权
标题翻译：在金属线层下面的一个或多个层中没有裂纹的半导体器件
公开(公告)号：US07847403B2
公开(公告)日：2010-12-07
申请号：US11806562
申请日：2007-06-01
申请人： Sang Hyun Yi , Young Nam Kim
发明人： Sang Hyun Yi , Young Nam Kim
IPC分类号： H01L23/48
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a method of manufacturing the same which yields high reliability and a high manufacturing yield. The semiconductor device includes a metal line layer having a plurality of metal line patterns spaced apart from each other, and at least one underlying layer under the metal line layer, wherein the space between two adjacent metal line patterns has a sufficient width to prevent a crack from occurring in one or more of the underlying layers. The cracking of an underlying layer may also be prevented by providing a slit in a direction parallel to the space between two adjacent metal line patterns at a sufficient distance from the space between the two adjacent metal line patterns.
摘要翻译：一种半导体器件及其制造方法，其产生高可靠性和高制造成品率。半导体器件包括具有彼此间隔开的多个金属线图案的金属线层和金属线层下面的至少一个下层，其中两个相邻金属线图案之间的空间具有足够的宽度以防止裂纹发生在一个或多个下层。也可以通过在与两个相邻的金属线图案之间的空间足够的距离处在与两个相邻的金属线图案之间的空间平行的方向上设置狭缝来防止下层的破裂。

6. 发明申请

US20130193583A1 SEMICONDUCTOR DEVICE HAVING METAL LINES WITH SLITS 有权
标题翻译：具有锯齿的金属线的半导体器件
公开(公告)号：US20130193583A1
公开(公告)日：2013-08-01
申请号：US13826163
申请日：2013-03-14
申请人： Sang-Hyun YI , Young-Nam KIM
发明人： Sang-Hyun YI , Young-Nam KIM
IPC分类号： H01L23/528
CPC分类号： H01L23/562 , H01L21/8221 , H01L23/528 , H01L23/585 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/1112 , H01L27/115 , H01L27/11521 , H01L27/11551 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.
摘要翻译：包括半导体衬底，半导体衬底上的集成电路，覆盖集成电路的绝缘层和绝缘层上的多个金属线图案的半导体器件。多个金属线图案的第一和第二相邻的金属线图案彼此间隔一个空间，并且第一和第二相邻金属线图案中的每一个具有至少一个狭缝。

7. 发明授权

US08673622B2 Cell chip and method for manufacturing the same 失效
标题翻译：电池芯片及其制造方法
公开(公告)号：US08673622B2
公开(公告)日：2014-03-18
申请号：US13482316
申请日：2012-05-29
申请人： Dong Woo Lee , Sang Hyun Yi , Bo Sung Ku
发明人： Dong Woo Lee , Sang Hyun Yi , Bo Sung Ku
IPC分类号： C12M1/00 , C12Q1/68 , G01N33/567 , G01N33/48 , C40B40/00 , C40B40/02 , C40B50/06
CPC分类号： C40B60/12 , B01J2219/00509 , B01J2219/00743
摘要： Disclosed herein are a cell chip and a method for manufacturing the same. The cell chip may include: a substrate; and a first contact member disposed on the substrate, wherein a top end of the first contact member is provided with a first inclined contact surface inclined with respect to the substrate.
摘要翻译：本文公开了一种电池芯片及其制造方法。电池芯片可以包括：基板; 以及设置在所述基板上的第一接触构件，其中，所述第一接触构件的顶端设置有相对于所述基板倾斜的第一倾斜接触面。

8. 发明授权

US08421229B2 Semiconductor device having metal lines with slits 有权
公开(公告)号：US08421229B2
公开(公告)日：2013-04-16
申请号：US12958287
申请日：2010-12-01
申请人： Sang-Hyun Yi , Young-Nam Kim
发明人： Sang-Hyun Yi , Young-Nam Kim
IPC分类号： H01L29/40
CPC分类号： H01L23/562 , H01L21/8221 , H01L23/528 , H01L23/585 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/1112 , H01L27/115 , H01L27/11521 , H01L27/11551 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.

9. 发明授权

US07863746B2 Semiconductor device having metal lines with slits 有权
标题翻译：具有狭缝的金属线的半导体装置
公开(公告)号：US07863746B2
公开(公告)日：2011-01-04
申请号：US11882805
申请日：2007-08-06
申请人： Sang-Hyun Yi , Young-Nam Kim
发明人： Sang-Hyun Yi , Young-Nam Kim
IPC分类号： H01L29/40
CPC分类号： H01L23/562 , H01L21/8221 , H01L23/528 , H01L23/585 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/1112 , H01L27/115 , H01L27/11521 , H01L27/11551 , H01L27/11568 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit.
摘要翻译：包括半导体衬底，半导体衬底上的集成电路，覆盖集成电路的绝缘层和绝缘层上的多个金属线图案的半导体器件。多个金属线图案的第一和第二相邻的金属线图案彼此间隔一个间隔，并且第一和第二相邻金属线图案中的每一个具有至少一个狭缝。

10. 发明授权

US07233070B2 Semiconductor device having no cracks in one or more layers underlying a metal line layer and method of manufacturing the same 有权
标题翻译：在金属线层下面的一层或多层中没有裂纹的半导体器件及其制造方法
公开(公告)号：US07233070B2
公开(公告)日：2007-06-19
申请号：US10885971
申请日：2004-07-08
申请人： Sang Hyun Yi , Young Nam Kim
发明人： Sang Hyun Yi , Young Nam Kim
IPC分类号： H01L29/40
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a method of manufacturing the same which yields high reliability and a high manufacturing yield. The semiconductor device includes a metal line layer having a plurality of metal line patterns spaced apart from each other, and at least one underlying layer under the metal line layer, wherein the space between two adjacent metal line patterns has a sufficient width to prevent a crack from occurring in one or more of the underlying layers. The cracking of an underlying layer may also be prevented by providing a slit in a direction parallel to the space between two adjacent metal line patterns at a sufficient distance from the space between the two adjacent metal line patterns.
摘要翻译：一种半导体器件及其制造方法，其产生高可靠性和高制造成品率。半导体器件包括具有彼此间隔开的多个金属线图案的金属线层和金属线层下面的至少一个下层，其中两个相邻金属线图案之间的空间具有足够的宽度以防止裂纹发生在一个或多个下层。也可以通过在与两个相邻的金属线图案之间的空间足够的距离处在与两个相邻的金属线图案之间的空间平行的方向上设置狭缝来防止下层的破裂。

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