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    • 6. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US08294207B2
    • 2012-10-23
    • US13168301
    • 2011-06-24
    • Sang-Hoon ChoYun-Seok ChoMyung-Ok KimSang-Hoon ParkYoung-Kyun Jung
    • Sang-Hoon ChoYun-Seok ChoMyung-Ok KimSang-Hoon ParkYoung-Kyun Jung
    • H01L29/78
    • H01L21/823487H01L29/66666
    • In a method of fabricating a semiconductor device on a substrate which includes a plurality of pillar patterns, an impurity region between adjacent pillar patterns, a gate electrode on each pillar pattern, a first capping layer covering the gate electrode, and a separation layer covering the first capping layer between the gate electrodes of adjacent pillar patterns, the first capping layer is removed except for a portion contacting the separation layer, a sacrificial layer is formed to cover the gate electrode, a second capping layer is formed on sidewalls of each pillar pattern, the sacrificial layer is removed and a word line connecting the gate electrodes of the adjacent pillar patterns is formed. In the manufactured device, the first capping layer isolates the impurity region from the word line and the second capping region prevents the sidewalls of the respective pillar pattern from being exposed.
    • 在一种在包括多个柱状图案的基板上制造半导体器件的方法中,相邻柱状图案之间的杂质区域,每个柱状图案上的栅极电极,覆盖栅电极的第一覆盖层和覆盖该栅极电极的分离层 在相邻柱状图案的栅电极之间的第一覆盖层除去除了与分离层接触的部分之外的第一覆盖层,形成覆盖栅电极的牺牲层,在每个柱状图案的侧壁上形成第二覆盖层 ,去除牺牲层,并且形成连接相邻柱状图案的栅电极的字线。 在所制造的器件中,第一覆盖层将杂质区域与字线隔离,并且第二封盖区域防止相应柱状图案的侧壁暴露。