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1. 发明申请

US20160181521A1 VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME 有权
标题翻译：可变电阻材料层和包括其的可变电阻存储器件
公开(公告)号：US20160181521A1
公开(公告)日：2016-06-23
申请号：US14965616
申请日：2015-12-10
申请人： Do-Hyung Kim , Jong-Uk KIM , Dong-Ho AHN , Sung-Lae CHO
发明人： Do-Hyung Kim , Jong-Uk KIM , Dong-Ho AHN , Sung-Lae CHO
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/144 , C01B19/007 , C01P2006/40 , H01L27/2409 , H01L27/2418 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/126 , H01L45/1683
摘要： A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of Xp(GeaSb(1-a-b)Teb)(1-p), wherein an atomic concentration of the impurities X is in a range of 0
摘要翻译：包含锗（Ge），锑（Sb），碲（Te）和至少一种类型的杂质X的可变电阻材料层。具有化学式Xp（GeaSb（1- ab）Teb）（1-p），其中杂质X的原子浓度在0

2. 发明授权

US08502184B2 Nonvolatile memory device using variable resistive element 有权
标题翻译：使用可变电阻元件的非易失性存储器件
公开(公告)号：US08502184B2
公开(公告)日：2013-08-06
申请号：US13103013
申请日：2011-05-06
申请人： Hyeong-Geun An , Sung-Lae Cho , Ik-Soo Kim , Dong-Hyun Im , Eun-Hee Cho
发明人： Hyeong-Geun An , Sung-Lae Cho , Ik-Soo Kim , Dong-Hyun Im , Eun-Hee Cho
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L27/2427 , H01L27/249 , H01L45/1226
摘要： A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.
摘要翻译：提供了一种非易失性存储器件及其制造方法。非易失性存储器件包括从第一方向从衬底延伸的导电柱，围绕导电柱的可变电阻器，围绕可变电阻器的开关材料层，沿第二方向延伸的第一导电层，以及第一电极，其在第三方向上延伸并接触第一导电层和开关材料层。第一，第二和第三方向中没有一个平行于第一，第二和第三方向的另一个。

3. 发明申请

US20110197812A1 APPARATUS AND METHOD FOR FABRICATING A PHASE-CHANGE MATERIAL LAYER 审中-公开
标题翻译：一种改变相变材料层的装置和方法
公开(公告)号：US20110197812A1
公开(公告)日：2011-08-18
申请号：US12965184
申请日：2010-12-10
申请人： Dong Hyun IM , Ik-Soo Kim , Sung-Lae Cho , Hyeong-Geun An
发明人： Dong Hyun IM , Ik-Soo Kim , Sung-Lae Cho , Hyeong-Geun An
IPC分类号： B05C11/10
CPC分类号： H01L45/1616 , C23C16/305 , C23C16/4481 , C23C16/4482 , C23C16/45553 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/144
摘要： Apparatus for fabricating a phase-change material layer include a process chamber. A first source supplier including a liquid delivery system (LDS) structure is coupled between a tellurium (Te) source container and the process chamber. A second source supplier including a bubbler method structure is coupled between at least one metal organic (MO) source container and the process chamber. Methods are also provided.
摘要翻译：用于制造相变材料层的装置包括处理室。包括液体输送系统（LDS）结构的第一源供应器耦合在碲（Te）源容器和处理室之间。包括起泡器方法结构的第二源供应器耦合在至少一个金属有机（MO）源容器和处理室之间。还提供了方法。

4. 发明申请

US20110180774A1 Phase Change Memory Device 有权
标题翻译：相变存储器件
公开(公告)号：US20110180774A1
公开(公告)日：2011-07-28
申请号：US13082557
申请日：2011-04-08
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/34 , C23C16/45536 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要翻译：提供了一种相变存储器件和用于形成相变存储器件的方法。该方法包括通过向基底提供反应性基团来形成相变材料层。反应性基团可以包括相变材料和氮的前体。

5. 发明授权

US07867880B2 Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors 有权
标题翻译：用于低温沉积的金属前体和形成金属薄层的方法，以及使用金属前体制造相变存储器件
公开(公告)号：US07867880B2
公开(公告)日：2011-01-11
申请号：US11772494
申请日：2007-07-02
申请人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
发明人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
IPC分类号： H01L21/205
CPC分类号： H01L45/1233 , C07F7/30 , C23C16/18 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1683 , Y10T428/31678
摘要： The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
摘要翻译：本发明提供用于低温沉积的金属前体。金属前体包括金属环化合物，其包含至少一种金属作为形成环的多个元素之一。还提供了形成金属薄层的方法和制造包括使用金属前体的相变存储器件。

6. 发明授权

US07807497B2 Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices 失效
标题翻译：相变材料层，其形成方法，具有该相变材料层的相变存储器件，以及形成相变存储器件的方法
公开(公告)号：US07807497B2
公开(公告)日：2010-10-05
申请号：US11826048
申请日：2007-07-12
申请人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
发明人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： C23C16/45523 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers.
摘要翻译：示例性实施例可以提供相变材料层以及通过在反应室中产生包括氦和/或氩的等离子体来形成相变材料层的方法和使用该相变材料层的装置，通过引入在物体上形成第一材料层包括第一材料的第一源气体，通过将包括第二材料的第二源气体引入反应室，在物体上形成第一复合材料层，通过引入第三源气体在第一复合材料层上形成第三材料层包括第三材料，并且通过引入包括第四材料的第四源气体，在所述第一复合材料层上形成第二复合材料层。示例性实施例包括碳的相变材料层可以在较低温度下在氦/氩等离子体环境下更容易地和/或快速地形成，方法是提供用于各种进料时间的源气体。示例性实施例还可以包括使用相变存储器层的存储器件。

7. 发明申请

US20090097305A1 METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE 有权
标题翻译：使用GE（II）源形成相变材料层的方法和制备相变存储器件的方法
公开(公告)号：US20090097305A1
公开(公告)日：2009-04-16
申请号：US12248964
申请日：2008-10-10
申请人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
发明人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
IPC分类号： G11C11/00 , H01L51/40
CPC分类号： H01L45/06 , C23C16/305 , C23C16/45534 , G11C13/0004 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/1683 , H01L45/1691
摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要翻译：一方面，提供了形成相变材料层的方法。该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。

8. 发明授权

US07487606B2 Functional shoe 有权
标题翻译：功能鞋
公开(公告)号：US07487606B2
公开(公告)日：2009-02-10
申请号：US11403168
申请日：2006-04-12
申请人： Sung Jin Koo , Sung Lae Cho , Jin Bok Moon
发明人： Sung Jin Koo , Sung Lae Cho , Jin Bok Moon
IPC分类号： A61F5/14
CPC分类号： A43B7/146 , A43B1/0054 , A43B3/0005 , A43B7/00 , A61H39/002 , A61H39/04 , A61H2205/125
摘要： Disclosed herein is a functional shoe, capable of applying micro current to the sole. The shoe includes a micro-current generating part, an acupressure part, and a conduction part. The micro-current generating part is inserted in a side of the shoe, thus generating predetermined micro current and voltage. The acupressure part is made of a conductive material, and is provided on a portion where nerve points of a sole connected to organs in a body are located, thus simultaneously performing physical acupressure action and conduction of micro current. The conduction part is connected between the micro-current generating part and the acupressure part, thus transmitting the generated micro current and voltage to the acupressure part. Thereby, the functional shoe simultaneously performs physical acupressure action on specific nerve points of the sole, and transmits micro current to the nerve points using external force applied when walking.
摘要翻译：本文公开了一种能够将微电流施加到鞋底的功能鞋。鞋包括微电流产生部分，指压部分和导电部分。微电流产生部分插入到鞋的侧面，从而产生预定的微电流和电压。指压部分由导电材料制成，并且设置在与身体中的器官相连的鞋底的神经点位于的部分上，从而同时进行物理性指压作用和微电流的传导。导电部分连接在微电流产生部分和指压部分之间，从而将产生的微电流和电压传输到指压部分。因此，功能靴同时对鞋底的特定神经点进行物理指压作用，并且使用在行走时施加的外力将微电流传递到神经点。

9. 发明申请

US20080308785A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：相变存储器件及其形成方法
公开(公告)号：US20080308785A1
公开(公告)日：2008-12-18
申请号：US12136176
申请日：2008-06-10
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/34 , C23C16/45536 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要翻译：提供了一种相变存储器件和用于形成相变存储器件的方法。该方法包括通过向基底提供反应性基团来形成相变材料层。反应性基团可以包括相变材料和氮的前体。

10. 发明授权

US07411208B2 Phase-change memory device having a barrier layer and manufacturing method 有权
标题翻译：具有阻挡层的相变存储器件和制造方法
公开(公告)号：US07411208B2
公开(公告)日：2008-08-12
申请号：US11027255
申请日：2004-12-30
申请人： Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
发明人： Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
IPC分类号： H01L45/00
CPC分类号： H01L29/7843 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666
摘要： A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

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