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1. 发明授权

US06703298B2 Self-aligned process for fabricating memory cells with two isolated floating gates 有权
标题翻译：用于制造具有两个隔离浮动栅极的存储器单元的自对准工艺
公开(公告)号：US06703298B2
公开(公告)日：2004-03-09
申请号：US10154395
申请日：2002-05-23
申请人： Yakov Roizin , Efraim Aloni , Ruth Shima-Edelstein , Christopher Cork
发明人： Yakov Roizin , Efraim Aloni , Ruth Shima-Edelstein , Christopher Cork
IPC分类号： H01L213205
CPC分类号： H01L29/66825 , H01L21/28273 , H01L29/7887
摘要： A self-aligned process for fabricating a non-volatile memory cell having two isolated floating gates. The process includes forming a gate dielectric layer over a semiconductor substrate. A floating gate layer is then formed over the gate dielectric layer. A disposable layer is formed over the floating gate layer, and patterned to form a disposable mask having a minimum line width. Sidewall spacers are formed adjacent to the disposable mask, and source/drain regions are implanted in the substrate, using the disposable mask and the sidewall spacers as an implant mask. The disposable mask is then removed, and the floating gate layer is etched through the sidewall spacers, thereby forming a pair of floating gate regions. The sidewall spacers are removed, and an oxidation step is performed, thereby forming an oxide region that surrounds the floating gate regions. A control gate is then formed over the oxide region.
摘要翻译：一种用于制造具有两个隔离的浮动栅极的非易失性存储单元的自对准工艺。该工艺包括在半导体衬底上形成栅介电层。然后在栅介质层上形成浮栅层。在浮动栅极层上形成一次性层，并被图案化以形成具有最小线宽的一次性掩模。侧壁间隔物形成为与一次性掩模相邻，并且使用一次性掩模和侧壁间隔物作为植入物掩模将源极/漏极区域注入到衬底中。然后去除一次性掩模，并且通过侧壁间隔物蚀刻浮栅，从而形成一对浮栅区域。去除侧壁间隔物，进行氧化步骤，从而形成围绕浮动栅极区域的氧化物区域。然后在氧化物区域上形成控制栅极。

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