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1. 发明授权

US07199390B2 Window interface layer of a light-emitting diode 有权
标题翻译：窗口接口层的发光二极管
公开(公告)号：US07199390B2
公开(公告)日：2007-04-03
申请号：US11500330
申请日：2006-08-08
申请人： Pei-Jih Wang , Rupert Wu
发明人： Pei-Jih Wang , Rupert Wu
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/02 , H01L33/14
摘要： This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6≦x≦0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP. In this way, the p-GaInP interface layer is interposed between a p-GaP window layer and a p-AlGaInP cladding layer for enhancing the film quality and the luminous efficiency as well as improving the electric property.
摘要翻译：本发明涉及发光二极管中的窗口界面层，其包括在其底侧具有n型欧姆电极的n型GaAs衬底; 形成在衬底顶上的n型AlGaInP包覆层; 形成在n型包覆层顶上的未掺杂的AlGaInP有源层; 形成在有源层顶上的p-AlGaInP包层; 由GaP制成的p型窗口层; 形成在p型窗口层顶上的p型欧姆电极; 以及由Ga x In 1-x P（0.6 <= x <= 0.9）制成的高掺杂p型界面层，并且介于p型包覆层和p型窗口层，其中高度掺杂的p-GaInP界面层具有比有源层的带隙高的带隙，然而，小于p型包覆层的带隙，并且其中晶格常数位于 GaAs和GaP。以这种方式，p-GaInP界面层插入在p-GaP窗口层和p-AlGaInP包覆层之间，以提高膜质量和发光效率以及改善电性能。

2. 发明申请

US20070045608A1 WINDOW INTERFACE LAYER OF A LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管的窗口界面层
公开(公告)号：US20070045608A1
公开(公告)日：2007-03-01
申请号：US11500330
申请日：2006-08-08
申请人： Pei-Jih Wang , Rupert Wu
发明人： Pei-Jih Wang , Rupert Wu
IPC分类号： H01L31/00
CPC分类号： H01L33/02 , H01L33/14
摘要： This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6≦x≦0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP. In this way, the p-GaInP interface layer is interposed between a p-GaP window layer and a p-AlGaInP cladding layer for enhancing the film quality and the luminous efficiency as well as improving the electric property.
摘要翻译：本发明涉及发光二极管中的窗口界面层，其包括在其底侧具有n型欧姆电极的n型GaAs衬底; 形成在衬底顶上的n型AlGaInP包覆层; 形成在n型包覆层顶上的未掺杂的AlGaInP有源层; 形成在有源层顶上的p-AlGaInP包覆层; 由GaP制成的p型窗口层; 形成在p型窗口层顶上的p型欧姆电极; 以及由Ga x In 1-x P（0.6 <= x <= 0.9）制成的高掺杂p型界面层，并且介于p型包覆层和p型窗口层，其中高度掺杂的p-GaInP界面层具有比有源层的带隙高的带隙，然而，小于p型包覆层的带隙，并且其中晶格常数位于 GaAs和GaP。以这种方式，p-GaInP界面层插入在p-GaP窗口层和p-AlGaInP包覆层之间，以提高膜质量和发光效率以及改善电性能。

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