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    • 3. 发明申请
    • INTEGRATED CIRCUITS AND PROCESSES FOR PROTECTION OF STANDARD CELL PERFORMANCE FROM CONTEXT EFFECTS
    • 集成电路和保护标准电池性能的过程从上下文的影响
    • US20120286331A1
    • 2012-11-15
    • US13454801
    • 2012-04-24
    • Thomas J. AtonRoger Mark TerryRobert L. Pitts
    • Thomas J. AtonRoger Mark TerryRobert L. Pitts
    • H01L27/10H01L21/82G06F17/50
    • H01L27/0207G06F17/5068H01L27/0251H01L27/0296H01L27/11803
    • Integrated circuit (5) includes substrate (10) with surface (20) and structure (30) including base levels (45.i, 45.(i+1)), terminating cells (48, 49), and block (40) of standard cells arranged in rows (42.i, 42.(i+1)), and another type of block (60) outside block (40). Standard cells at at least two edges of block (40) have the following protections: (1) block (60) has strip of separation (41.j) having at least a minimum width from the edges of block (40), and protected by one of the following: (2) terminating cells (48, 49) reduce context effect and some terminating cells (48) are placed at i least one end of rows (42.i, 42.(i+1)) of standard cells within first-named block (40), and (3) the terminating cells (48, 49) reduce context effect and some terminating cells (49) are at one end of a column of standard cells within block (40). Other structures, devices, and processes are also disclosed.
    • 集成电路(5)包括具有表面(20)和结构(30)的衬底(10),包括基底电平(45.i,45.(i + 1)),终端电池(48,49)和块(40) 排列成行(42.i,42.(i + 1))的标准单元和块(40)外的另一种类型的块(60)。 在块(40)的至少两个边缘处的标准电池具有以下保护:(1)块(60)具有从块(40)的边缘至少具有至少最小宽度的分离带(41.j),并且被保护 通过以下之一:(2)终止单元(48,49)减少上下文效应,并且一些终端单元(48)被放置在标准的行(42.i,42.(i + 1))的至少一端 第一命名块(40)内的小区,以及(3)终止小区(48,49)减少上下文影响,并且一些终端小区(49)位于块(40)内的标准小区列的一端。 还公开了其它结构,装置和方法。