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    • 4. 发明授权
    • Security system and method
    • 安全系统和方法
    • US07818572B2
    • 2010-10-19
    • US10902683
    • 2004-07-28
    • Roger Green StewartDaniel Noah Paley
    • Roger Green StewartDaniel Noah Paley
    • H04L9/12H04L9/14H04L9/16
    • H04L9/3271H04L63/0428H04L67/02H04L2209/805
    • A first embodiment provides a process and system for simple, secure exchange of random numbers between two devices by combining a random number and a secret code (e.g., password) to generate a first challenge code, extracting the random number using the password at the second device, combining the first random number with a second random number, and returning the combination to the first device, which extracts the second random number from the second challenge code using its first random number. A CRC can be added to authenticate the sender. Another embodiment provides a system and method for generating a seedless pseudo-random number. The Yet another embodiment provides a system and method for generating data encryption coding with variable clocking.
    • 第一实施例提供了一种用于通过组合随机数和密码(例如密码)来简单,安全地交换两个设备之间的随机数的过程和系统,以产生第一质询代码,使用第二个密码的密码提取随机数 将所述第一随机数与第二随机数进行组合,并将所述组合返回到所述第一设备,所述第一设备使用其第一随机数从所述第二询问代码中提取所述第二随机数。 可以添加CRC来验证发件人。 另一实施例提供了一种用于产生无籽伪随机数的系统和方法。 另一个实施例提供了一种用于利用可变计时产生数据加密编码的系统和方法。
    • 8. 发明授权
    • Active matrix electroluminescent display pixel element having a field
shield means between the pixel and the switch
    • 有源矩阵电致发光显示像素元件在像素和开关之间具有场屏蔽装置
    • US5736752A
    • 1998-04-07
    • US710271
    • 1996-09-16
    • Fu-Lung HseuhAlfred Charles IpriGary Mark DolnyRoger Green Stewart
    • Fu-Lung HseuhAlfred Charles IpriGary Mark DolnyRoger Green Stewart
    • H01L29/786G09G3/30H01L27/088H01L27/12H01L29/04G02F1/1343
    • H01L27/1203G09G3/30H01L27/088H01L27/12G09G2300/0842
    • In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed over the switching circuit and a conductive layer (the field shield) is formed over the insulating layer. A through hole is provided in the field shield such that an electrical connection can be made between the switching circuit and an EL cell. The EL cell is then conventionally formed on top of the shield layer. Consequently, the shield isolates the switching circuit from the EL cell and ensures that any electric fields produced in the EL cell do not interfere with the operation of the switching electronics. Furthermore, the switching circuitry for each cell contains two transistors; a low voltage MOS transistor and a high voltage MOS transistor. The low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. This gate charge is stored between the gate electrode of the high voltage transistor and the electric field shield. Additionally, to improve the breakdown voltage of the high voltage transistor, a capacitive divider network is fabricated proximate the drift region of that transistor. As such, the network uniformly distributes an electric field over the drift region.
    • 在有源矩阵电致发光显示器中,包含EL单元和用于EL单元的开关电子器件之间的接地导电电场屏蔽的像素。 在制造像素的方法中,首先,形成EL单元切换电路,然后在开关电路上形成绝缘层,并且在绝缘层上形成导电层(场屏蔽)。 在屏蔽层中设置通孔,使得可以在开关电路和EL单元之间形成电连接。 然后通常将EL电池形成在屏蔽层的顶部。 因此,屏蔽将开关电路与EL单元隔离,并确保在EL单元中产生的任何电场不会干扰开关电子器件的操作。 此外,每个单元的开关电路包含两个晶体管; 低压MOS晶体管和高压MOS晶体管。 低电压晶体管由数据和选择线上的信号控制。 当激活时,低压晶体管通过对高电压晶体管的栅极充电来激活高电压晶体管。 该栅极电荷存储在高电压晶体管的栅电极和电场屏蔽之间。 另外,为了提高高压晶体管的击穿电压,在该晶体管的漂移区附近制造电容分压网络。 这样,网络在漂移区域上均匀分布电场。
    • 9. 发明授权
    • Memory cell and array
    • 存储单元和数组
    • US4063225A
    • 1977-12-13
    • US664673
    • 1976-03-08
    • Roger Green Stewart
    • Roger Green Stewart
    • G11C11/412G11C11/40H03K3/26H03K3/29
    • G11C11/412
    • An active storage or memory cell includes first and second high input impedance inverters cross coupled to form a flip-flop. The output impedance of the second inverter is significantly lower than the output impedance of the first inverter. Input signals are applied at, and information is read out from, a single input-output point common to the output of the second inverter and the input of the first inverter via a gating means connected between said input-output point and an input-output line which is turned on more slowly than it is turned off.
    • 有源存储器或存储器单元包括交叉耦合以形成触发器的第一和第二高输入阻抗反相器。 第二反相器的输出阻抗明显低于第一反相器的输出阻抗。 输入信号通过连接在所述输入输出点和输入输出端之间的选通装置施加于第二反相器的输出的公共的单个输入输出点和第一反相器的输入端上,并从其中读出信息 线路被打开比它被关闭更慢。
    • 10. 发明授权
    • Memory array
    • 内存阵列
    • US4044341A
    • 1977-08-23
    • US668909
    • 1976-03-22
    • Roger Green StewartJoel Roy Oberman
    • Roger Green StewartJoel Roy Oberman
    • G11C17/00G11C5/06G11C7/12G11C11/401G11C11/41G11C11/417G11C17/12G11C11/00
    • G11C17/12G11C5/063G11C7/12
    • A memory array includes row conductors which have to be charged to a first level prior to each read-out cycle. During a read-out cycle the row conductors may or may not be discharged to a second level depending on whether a "1" or a "0" is stored at selected bit locations. The memory array also includes "dummy" row conductors which are discharged to the second level each time the contents of the array are read out. Means are provided for charging the row conductors including the "dummy" row conductors to the first level prior to each read-out, for sensing the charge level on the "dummy" row conductors, and for terminating the charging cycle when the charge level on the "dummy" row conductors reaches the first level.
    • 存储器阵列包括必须在每个读出周期之前被充电到第一电平的行导体。 在读出周期期间,根据在所选位位置是否存储“1”还是“0”,行导体可以或不会放电到第二电平。 存储器阵列还包括每次读出阵列的内容时排出到第二级的“虚拟”行导体。 提供了用于在每次读出之前将包括“虚拟”行导体的行导体充电到第一电平的装置,用于感测“虚拟”行导体上的电荷水平,并且当充电电平开启时终止充电周期 “虚拟”行导体达到第一级。