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1. 发明授权

US5023801A Programmable - voltage - generator interface for decreasing the minimum voltage step 失效
标题翻译：可编程 - 电压 - 发生器接口，用于降低最小电压阶跃
公开(公告)号：US5023801A
公开(公告)日：1991-06-11
申请号：US323172
申请日：1989-03-15
申请人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carolo Paorici , Lucio Zanotti , Giovanni Zuccalli
发明人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carolo Paorici , Lucio Zanotti , Giovanni Zuccalli
IPC分类号： G05B19/02 , G05D23/19 , G06G7/14
CPC分类号： G06G7/14 , G05D23/1904
摘要： An interface circuit to the output of a programmable voltage ramp generator for decreasing the minimum voltage step of such a generator having two voltage channels and a minimum voltage step greater than 1 millivolt. The interface circuit receives an input from each of the two voltage channels (V.sub.2, V.sub.3), along with an inserted voltage (V.sub.1). The circuit includes a summing amplifier for (i) compressing the minimum voltage step from one voltage channel (V.sub.2) by a factor equal to or greater than such minimum voltage step, (ii) adding the voltage from the other channel (V.sub.3) to the compressed voltage, and (iii) subtracting the inserted voltage (V.sub.1) (or adding an inserted voltage which is negative). The inserted voltage (V.sub.1) is equal in magnitude to the maximum output value from the voltage channel that has the voltage compressed (V.sub.2). The output of the summing amplifier (V.sub.out) may be represented by:V.sub.out =(V.sub.3 /X)+(V.sub.2 /Y)+(V.sub.1 /Z)where X, Y, Z=attenuation or amplication factors. The interface circuit decreases the minimum voltage step at channel V.sub.2 by a factor Y down to a minimum voltage step of 1 millivolt or less.
摘要翻译：一个可编程电压斜坡发生器的输出的接口电路，用于减小具有两个电压通道的这种发电机的最小电压阶跃，以及大于1毫伏的最小电压步长。接口电路接收来自两个电压通道（V2，V3）中的每一个的输入以及插入的电压（V1）。该电路包括一个加法放大器，用于（i）将来自一个电压通道（V2）的最小电压阶跃压缩等于或大于该最小电压阶跃的因子，（ii）将来自另一个通道（V3）的电压加到压缩电压，以及（iii）减去插入电压（V1）（或加上为负的插入电压）。插入电压（V1）的大小与从压缩电压（V2）的电压通道的最大输出值相等。求和放大器（Vout）的输出可以由下式表示：Vout =（V3 / X）+（V2 / Y）+（V1 / Z）其中X，Y，Z =衰减或放大因子。接口电路将通道V2处的最小电压阶降低到一个1毫伏或更小的最小电压步长。

2. 发明授权

US10208399B2 Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 有权
公开(公告)号：US10208399B2
公开(公告)日：2019-02-19
申请号：US14394858
申请日：2012-04-24
申请人： Zbigniew Galazka , Roberto Fornari , Reinhard Uecker
发明人： Zbigniew Galazka , Roberto Fornari , Reinhard Uecker
IPC分类号： C30B11/00 , C30B30/04 , C30B15/00 , C30B11/14 , C30B29/16 , H01F1/01
摘要： A method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In2O3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting In2O3 starting material (23) during heating-up of a noble metal crucible (4) containing the In2O3 starting material (23) and thus increasing electrical conductivity of the In2O3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of In2O3. Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid In2O3 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid In2O3 starting material at least one bulk In2O3 single crystal (28.1, 28.2) is formed. We named this novel crystal growth method the “Levitation-Assisted Self-Seeding Crystal Growth Method”. The apparatus for growing bulk In2O3 single crystals from the melt comprises an inductively heated thermal system with a noble metal crucible (4) and evacuation passages (22, 22.1) for gaseous decomposition products of In2O3, while keeping very low temperature gradients. Various configurations of the induction coil (6), the noble metal crucible (4) and a lid (12) covering the crucible can be utilized to obtain very low temperature gradients, sufficient evacuation passages and a high levitation force. The electrical properties of the melt grown In2O3 single crystals can be modified in a wide range by at least one heat treatment in suitable atmospheres and appropriate temperatures.

3. 发明授权

US4776971A Gallium arsenide single crystals with low dislocation density and high purity 失效
标题翻译：砷化镓单晶，位错密度低，纯度高
公开(公告)号：US4776971A
公开(公告)日：1988-10-11
申请号：US867514
申请日：1986-05-28
申请人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carlo Paorici , Lucio Zanotti , Giovanni Zuccalli
发明人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carlo Paorici , Lucio Zanotti , Giovanni Zuccalli
IPC分类号： C30B29/42 , C30B15/00 , C30B27/02 , H01L21/18 , H01L21/208 , C30B15/04 , C30B15/20
CPC分类号： C30B15/00 , C30B29/42
摘要： Undoped GaAs single crystals with low dislocation density, low impurity content, 0.20-1 Kg in weight and constant diameter of 1"-2" (inches), said single crystals being obtained with LEC technology at low or high pressure with synthesis of the polycrystal in situ and subsequent growth of the single crystal.
摘要翻译：未掺杂的GaAs单晶具有低位错密度，低杂质含量，重量为0.20-1Kg，1“-2”（英寸）恒定直径，所述单晶在低压或高压下用LEC技术获得，合成多晶原位和随后的单晶生长。

4. 发明申请

US20150125717A1 METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (IN2O3) SINGLE CRYSTALS AND INDIUM OXIDE (IN203) SINGLE CRYSTAL 审中-公开
标题翻译：用于生长氧化铟（In2O3）单晶和氧化铟（IN203）单晶的方法和装置
公开(公告)号：US20150125717A1
公开(公告)日：2015-05-07
申请号：US14394858
申请日：2012-04-24
申请人： Zbigniew Galazka , Roberto Fornari , Reinhard Uecker
发明人： Zbigniew Galazka , Roberto Fornari , Reinhard Uecker
IPC分类号： C30B30/04 , C30B29/16 , H01F1/01 , C30B11/00
CPC分类号： C30B30/04 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/14 , C30B15/00 , C30B29/16 , H01F1/01 , Y10T117/1004
摘要： A method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In2O3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting In2O3 starting material (23) during heating-up of a noble metal crucible (4) containing the In2O3 starting material (23) and thus increasing electrical conductivity of the In2O3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of In2O3. Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid In2O3 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid In2O3 starting material at least one bulk In2O3 single crystal (28.1, 28.2) is formed. We named this novel crystal growth method the “Levitation-Assisted Self-Seeding Crystal Growth Method”. The apparatus for growing bulk In2O3 single crystals from the melt comprises an inductively heated thermal system with a noble metal crucible (4) and evacuation passages (22, 22.1) for gaseous decomposition products of In2O3, while keeping very low temperature gradients. Various configurations of the induction coil (6), the noble metal crucible (4) and a lid (12) covering the crucible can be utilized to obtain very low temperature gradients, sufficient evacuation passages and a high levitation force. The electrical properties of the melt grown In2O3 single crystals can be modified in a wide range by at least one heat treatment in suitable atmospheres and appropriate temperatures.
摘要翻译：公开了一种用于从熔体中生长真正体积的In 2 O 3单晶以及熔融生长的本体In 2 O 3单晶的方法和装置。生长方法包括在含有In 2 O 3起始材料（23）的贵金属坩埚（4）的加热期间初始不导电的In 2 O 3原料（23）的受控分解，从而增加In 2 O 3起始材料的电导率随着上升温度足以与感应线圈（6）的电磁场通过坩埚壁（24）在In 2 O 3的熔点附近耦合。这种耦合导致液体In 2 O 3起始材料的至少一部分（23.1）的电磁悬浮，其中颈部（26）形成作为结晶种子。在使用液体In 2 O 3起始材料冷却贵金属坩埚（4）时，形成至少一个体积的In 2 O 3单晶（28.1,28.2）。我们将这种新型晶体生长方法命名为“悬浮辅助自种晶体生长法”。用于从熔体生长大块In2O3单晶的装置包括用于惰性金属坩埚（4）的感应加热热系统和用于In 2 O 3气态分解产物的排气通道（22,22.1），同时保持非常低的温度梯度。可以利用感应线圈（6），贵金属坩埚（4）和覆盖坩埚的盖（12）的各种构造来获得非常低的温度梯度，足够的排气通道和高悬浮力。熔体生长的In 2 O 3单晶的电性能可以在适当的气氛和合适的温度下通过至少一种热处理在宽范围内进行改性。

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