专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050064619A1 Process for a monolithically-integrated micromachined sensor and circuit 审中-公开
标题翻译：单片集成微机械传感器和电路的工艺
公开(公告)号：US20050064619A1
公开(公告)日：2005-03-24
申请号：US10955128
申请日：2004-09-30
申请人： Abhijeet Chavan , James Logsdon , Dan Chilcott , John Christenson , Robert Speck
发明人： Abhijeet Chavan , James Logsdon , Dan Chilcott , John Christenson , Robert Speck
IPC分类号： H01L27/16 , H01L21/00
CPC分类号： B81B3/0072 , B81B2201/0278 , B81B2203/0127 , G01J5/02 , G01J5/024 , G01J5/12 , H01L27/16 , H01L2224/48463
摘要： A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm. The dry etching step terminates at the oxide layer, such that the diaphragm comprises the dielectric layers and conductive layer. A special absorber is preferably fabricated on the diaphragm to promote efficient absorption of incoming infrared radiation.
摘要翻译：使用集成传感器技术的方法，其中微机械感测元件和信号处理电路组合在单个半导体衬底上以形成例如红外传感器。该方法基于在电路制造过程完成之后修改CMOS工艺以产生改进的分层微加工构件，例如隔膜。该方法通常需要通过处理步骤在衬底上形成电路器件，该步骤包括在衬底上形成多个电介质层和至少一个导电层。电介质层包括在衬底的表面上的氧化物层和处于张力的至少两个电介质层，导电层位于两个电介质层之间。然后将基板的表面干蚀刻以形成空腔并描绘膜片和围绕隔膜的框架。干蚀刻步骤终止于氧化物层，使得隔膜包括电介质层和导电层。优选地在隔膜上制造特殊的吸收体以促进进入的红外辐射的有效吸收。

IPRDB

热门服务

关于我们

友情链接

联系方式