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1. 发明授权

US5820922A Method for localized deposition of noble metal catalysts with control of morphology 失效
标题翻译：用于形态学控制的贵金属催化剂的局部沉积方法
公开(公告)号：US5820922A
公开(公告)日：1998-10-13
申请号：US767987
申请日：1996-12-17
申请人： Antonio J. Ricco , Ronald P. Manginell , Robert J. Huber
发明人： Antonio J. Ricco , Ronald P. Manginell , Robert J. Huber
IPC分类号： C23C16/18 , C23C16/46 , G01N27/16 , C23C16/40
CPC分类号： G01N27/16 , C23C16/18 , C23C16/46
摘要： A combustible gas sensor that uses a resistively heated, noble metal-coated, micromachined polycrystalline Si filament to calorimetrically detect the presence and concentration of combustible gases. A thin catalytic Pt film was deposited by CVD from the precursor Pt(acac).sub.2 onto microfilaments resistively heated to approximately 500 .degree. C.; Pt deposits only on the hot filament. The filaments tested to date are 2 .mu.m thick .times.10 .mu.m wide .times.100, 250, 500, or 1000 .mu.m-long polycrystalline Si; some are overcoated with a 0.25 .mu.m-thick protective CVD Si.sub.3 N.sub.4 layer.
摘要翻译：一种可燃气体传感器，其使用电阻加热的贵金属涂覆的微加工多晶硅丝来量热检测可燃气体的存在和浓度。通过CVD将Pt催化Pt薄膜从前体Pt（acac）2沉积到电阻加热至约500℃的微丝上; Pt仅在热丝上沉积。迄今为止测试的长丝为2μm厚x10μm宽x100,250,500或1000μm长的多晶Si; 有些被外涂了0.25μm厚的保护性CVD Si 3 N 4层。

2. 发明授权

US06393913B1 Microelectromechanical dual-mass resonator structure 有权
标题翻译：微机电双质量谐振器结构
公开(公告)号：US06393913B1
公开(公告)日：2002-05-28
申请号：US09500120
申请日：2000-02-08
申请人： Christopher W. Dyck , James J. Allen , Robert J. Huber
发明人： Christopher W. Dyck , James J. Allen , Robert J. Huber
IPC分类号： G01P904
CPC分类号： H03H9/2405 , G01P15/0802 , G01P15/097 , G01P15/125 , G01P15/131 , G01P2015/0814 , H03H2009/02496 , H03H2009/02511
摘要： A dual-mass microelectromechanical (MEM) resonator structure is disclosed in which a first mass is suspended above a substrate and driven to move along a linear or curved path by a parallel-plate electrostatic actuator. A second mass, which is also suspended and coupled to the first mass by a plurality of springs is driven by motion of the first mass. Various modes of operation of the MEM structure are possible, including resonant and antiresonant modes, and a contacting mode. In each mode of operation, the motion induced in the second mass can be in the range of several microns up to more than 50 &mgr;m while the first mass has a much smaller displacement on the order of one micron or less. The MEM structure has applications for forming microsensors that detect strain, acceleration, rotation or movement.
摘要翻译：公开了一种双质量微机电（MEM）谐振器结构，其中第一质量块悬挂在衬底上并被平行板静电致动器沿着线性或弯曲路径驱动。还通过多个弹簧悬挂并联接到第一质量块的第二质量被第一质量块的运动驱动。 MEM结构的各种操作模式是可能的，包括谐振和反谐振模式以及接触模式。在每种操作模式中，在第二质量中诱发的运动可以在几微米到大于50微米的范围内，而第一质量具有大大小于1微米的位移的更小的位移。 MEM结构具有用于形成检测应变，加速度，旋转或运动的微传感器的应用。

3. 发明授权

US07009547B2 Current steering folding circuit 失效
公开(公告)号：US07009547B2
公开(公告)日：2006-03-07
申请号：US10322341
申请日：2002-12-17
申请人： Weidong Guo , Robert J. Huber , Kent F. Smith
发明人： Weidong Guo , Robert J. Huber , Kent F. Smith
IPC分类号： H03M1/12
CPC分类号： H03M1/141 , H03K17/04106
摘要： A current steering folding circuit is provided. The current steering folding circuit includes a load and at least one current source for drawing a current from the load. The current steering folding circuit also includes a first output signal terminal for providing a first output signal, and a second output signal terminal for providing a second output signal. A current steering section is also provided. The current steering section steers the current between the first output signal terminal and the second output signal terminal based on an input signal. The first output signal is substantially equal to the second output signal for N values of the input signal. Advantageously, the number of current sources does not exceed N.

4. 发明授权

US5834627A Calorimetric gas sensor 失效
标题翻译：热量气体传感器
公开(公告)号：US5834627A
公开(公告)日：1998-11-10
申请号：US766142
申请日：1996-12-17
申请人： Antonio J. Ricco , Robert C. Hughes , James H. Smith , Daniel J. Moreno , Ronald P. Manginell , Stephen D. Senturia , Robert J. Huber
发明人： Antonio J. Ricco , Robert C. Hughes , James H. Smith , Daniel J. Moreno , Ronald P. Manginell , Stephen D. Senturia , Robert J. Huber
IPC分类号： G01N27/16 , G01N7/00
CPC分类号： G01N27/16
摘要： A combustible gas sensor that uses a resistively heated, noble metal-coated, micromachined polycrystalline Si filament to calorimetrically detect the presence and concentration of combustible gases. The filaments tested to date are 2 .mu.m thick.times.10 .mu.m wide.times.100, 250, 500, or 1000 .mu.m-long polycrystalline Si; some are overcoated with a 0.25 .mu.m-thick protective CVD Si.sub.3 N.sub.4 layer. A thin catalytic Pt film was deposited by CVD from the precursor Pt(acac).sub.2 onto microfilaments resistively heated to approximately 500.degree. C.; Pt deposits only on the hot filament. Using a constant-resistance-mode feedback circuit, Pt-coated filaments operating at ca. 300.degree. C. (35 mW input power) respond linearly, in terms of the change in supply current required to maintain constant resistance (temperature), to H.sub.2 concentrations between 100 ppm and 1% in an 80/20 N.sub.2 /O.sub.2 mixture. Other catalytic materials can also be used.
摘要翻译：一种可燃气体传感器，其使用电阻加热的贵金属涂覆的微加工多晶硅丝来量热检测可燃气体的存在和浓度。到目前为止测试的长丝是2μm厚的10μm宽×100,250,500或1000μm长的多晶Si; 有些被外涂了0.25μm厚的保护性CVD Si 3 N 4层。通过CVD将Pt催化Pt薄膜从前体Pt（acac）2沉积到电阻加热至约500℃的微丝上; Pt仅在热丝上沉积。使用恒电阻模式反馈电路，Pt涂层长丝在约在80/20 N2 / O2混合物中，在保持恒定电阻（温度）所需的电源电流变化为100 ppm和1％之间，300°C（35 mW输入功率）线性响应。也可以使用其它催化剂。

5. 发明授权

US4397714A System for measuring the concentration of chemical substances 失效
标题翻译：用于测量化学物质浓度的系统
公开(公告)号：US4397714A
公开(公告)日：1983-08-09
申请号：US159994
申请日：1980-06-16
申请人： Jiri Janata , Robert J. Huber , Rosemary L. Smith
发明人： Jiri Janata , Robert J. Huber , Rosemary L. Smith
IPC分类号： G01N27/414 , G01N27/26
CPC分类号： G01N27/4148
摘要： A solid state chemically sensitive integrated circuit includes three field-effect transistors (FETs) fabricated on a single semiconductor substrate. The gate of a first FET is overlaid with a chemically sensitive element that is adapted to create an electrochemical potential at the gate when exposed to selected chemical substances. This gate is also electrically connected to the source of a second FET and the drain of a third FET. The second and third FETs are used as switches to selectively connect the gate of the first FET to ground, to an external reference potential, or to isolate it from all external signals. In the latter case, only the interaction between the chemically sensitive element and external chemical substances may affect the first FET's operation thus allowing the first FET, when so isolated, to provide a measure of the chemical properties of the substance to which its chemically sensitive element is exposed. The presence of the second and third FETs allows the first FET to be protected from static shock during routine handling and when the device is not in use. They also allow the performance of the first FET to be fully characterized by permitting a controlled gate voltage to be applied to the first FET.
摘要翻译：固体化学敏感集成电路包括制造在单个半导体衬底上的三个场效应晶体管（FET）。第一FET的栅极覆盖有化学敏感元件，其适于在暴露于选定的化学物质时在栅极处产生电化学电位。该栅极也电连接到第二FET的源极和第三FET的漏极。第二和第三FET用作选择性地将第一FET的栅极接地，连接到外部参考电位或将其与所有外部信号隔离的开关。在后一种情况下，只有化学敏感元件与外部化学物质之间的相互作用可能会影响第一FET的操作，从而允许第一FET在这样隔离时提供其化学敏感元件的化学性质的量度被暴露。第二和第三FET的存在允许在常规处理期间以及当器件不使用时，保护第一FET免受静电冲击。它们还允许通过允许将受控的栅极电压施加到第一FET来完全表征第一FET的性能。

6. 发明授权

US5020030A Nonvolatile SNOS memory cell with induced capacitor 失效
标题翻译：具有感应电容器的非易失性SNOS存储单元
公开(公告)号：US5020030A
公开(公告)日：1991-05-28
申请号：US265409
申请日：1988-10-31
申请人： Robert J. Huber
发明人： Robert J. Huber
IPC分类号： G11C14/00 , H01L27/108 , H01L27/115 , H01L29/792
CPC分类号： H01L27/115 , G11C14/00 , H01L27/108 , H01L29/792
摘要： A silicon substrate with a drain area formed therein is used for the base of the device. A first polysilicon gate is disposed above the substrate with a layer of gate oxide therebetween. Adjacent to the first gate and contiguous to the same plane is a second polysilicon gate. The second gate and the substrate are separated by a layer of tunnel oxide and silicon nitride. The silicon nitride being used to store a charge. The state of the device is determined by the presence of a capacitance in the substrate generated by the charge on the silicon nitride. This device may function as a nonvolatile memory or a dynamic random access memory with the capability of capturing its DRAM state.
摘要翻译：其中形成有漏极区的硅衬底用于器件的基底。第一多晶硅栅极设置在衬底上方，其间具有一层栅极氧化物。与第一个栅极相邻并且与相同的平面邻接的是第二个多晶硅栅极。第二栅极和衬底被隧道氧化物层和氮化硅层隔开。用于存储电荷的氮化硅。器件的状态由在氮化硅上的电荷产生的衬底中的电容的存在来确定。该装置可以用作具有捕获其DRAM状态的能力的非易失性存储器或动态随机存取存储器。

7. 发明授权

US4776944A Chemical selective sensors utilizing admittance modulated membranes 失效
标题翻译：采用导纳调制膜的化学选择传感器
公开(公告)号：US4776944A
公开(公告)日：1988-10-11
申请号：US92159
申请日：1987-09-01
申请人： Jiri Janata , Robert J. Huber , Michael Thompson
发明人： Jiri Janata , Robert J. Huber , Michael Thompson
IPC分类号： G01N27/414 , G01N27/30
CPC分类号： G01N27/4035
摘要： A chemical selective sensor system utilizes admittance modulated to detect the presence of chemicals or chemical species in a fluid. The sensor system includes a film or membrane adapted to pass ions when selected chemicals which are to be detected are present at the membrane surface. The membrane is attached to a hydrophilic layer of material which, in turn, is attached to a transformed layer which is deposited on a base substrate. When the selected chamicals are present in the fluid, the membrane interacts with the chemicals to allow ions, also in the fluid, to permeate the membrane. This ion current in the membrane is transformed or converted by the transformer layer to an electronic current which is measured by an electrical circuit coupled to the transformer layer of material. An alternating current source is coupled at one terminal to the transformer layer and to the measuring circuit, and at another terminal to a circuit return electrode.
摘要翻译：化学选择性传感器系统利用调制的导纳来检测流体中化学物质或化学物质的存在。传感器系统包括当要检测的选定化学物质存在于膜表面时适于通过离子的膜或膜。膜附着到亲水层材料上，该亲水层又连接到沉积在基底基底上的转化层。当所选择的腔室存在于流体中时，膜与化学物质相互作用以允许离子（也在流体中）渗透到膜中。膜中的离子电流被变压器层转换或转换成电流，该电流由耦合到材料的变压器层的电路测量。交流电源在一个端子处耦合到变压器层和测量电路，并且在另一端子耦合到电路返回电极。

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