专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明申请

US20050185489A1 Dynamic data restore in thyristor-based memory device 失效
标题翻译：基于晶闸管的存储器件中的动态数据恢复
公开(公告)号：US20050185489A1
公开(公告)日：2005-08-25
申请号：US11112090
申请日：2005-04-22
申请人： Farid Nemati , Hyun-Jin Cho , Robert Igehy
发明人： Farid Nemati , Hyun-Jin Cho , Robert Igehy
IPC分类号： G11C7/00 , G11C11/00 , G11C11/39 , H01L29/866
CPC分类号： G11C11/39
摘要： A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the internal positive feedback loop in the thyristor is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.
摘要翻译：使用动态操作的恢复电路将电压或电流恢复脉冲信号施加到基于晶闸管的存储器单元，并且其中使用晶闸管的内部正反馈回路在单元中恢复数据。在一个示例实现中，晶闸管中的内部正反馈环路用于在晶闸管电流下降到保持电流以下之前恢复器件的导通状态。定义并施加脉冲和/或周期波形以确保晶闸管不从其导通状态释放。晶闸管周期性恢复电流的时间平均值可能低于保持电流阈值。虽然不一定限于基于晶闸管的存储器单元，但是已经发现本发明的各种实施例对于其中使用薄电容耦合晶闸管来提供双向的高速，低功率存储器单元特别有用稳定存储元件

IPRDB

热门服务

关于我们

友情链接

联系方式