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1. 发明授权

US5606090A Conversion of high-boiling residue from direct process to monosilanes 失效
标题翻译：将高沸点残余物从直接过程转化为单硅烷
公开(公告)号：US5606090A
公开(公告)日：1997-02-25
申请号：US663338
申请日：1996-06-13
申请人： Jonathan A. Brinson , Steven K. Freeburne , Robert F. Jarvis, Jr.
发明人： Jonathan A. Brinson , Steven K. Freeburne , Robert F. Jarvis, Jr.
IPC分类号： B01J27/125 , C07B61/00 , C07F7/12 , C07F7/16 , C07F7/08
CPC分类号： C07F7/128 , C07F7/16
摘要： A process for the production of monosilanes from the high-boiling residue resulting from the reaction of organochlorides with silicon metalloid in a process typically referred to as the "direct process." The present process comprises forming a mixture comprising an organosilane and the high-boiling residue and contacting the mixture in the presence of hydrogen gas with a catalytic amount of a catalyst composition effective in promoting the formation of monosilanes from the high-boiling residue. A preferred catalyst composition comprises aluminum trichloride, at least a portion of which may be formed in situ during conduct of the direct process and isolation of the high-boiling residue.
摘要翻译：在通常称为“直接法”的过程中，由有机氯化物与硅准金属反应产生的高沸点残留物生产单硅烷的方法。本方法包括形成包含有机硅烷和高沸点残余物的混合物，并在氢气存在下使该混合物与催化量的有效促进高沸点残余物形成单硅烷的催化剂组合物接触。优选的催化剂组合物包含三氯化铝，其中至少一部分可以在进行直接过程和高沸点残余物的分离过程中就地形成。

2. 发明授权

US5629438A Hydrochlorination process for converting high-boiling residue from direct process to monosilanes 失效
标题翻译：将高沸点残余物从直接过程转化为单硅烷的氢氯化方法
公开(公告)号：US5629438A
公开(公告)日：1997-05-13
申请号：US712226
申请日：1996-09-11
申请人： Steven K. Freeburne , Robert F. Jarvis, Jr.
发明人： Steven K. Freeburne , Robert F. Jarvis, Jr.
IPC分类号： C07F7/08 , C07F7/12 , C07F7/16
CPC分类号： C07F7/16 , C07F7/125 , C07F7/128
摘要： A hydrochlorination process for the production of monosilanes from the high-boiling residue resulting from the reaction of organochlorides with silicon metalloid in a process typically referred to as the "direct process." The process comprises (A) forming a mixture comprising the high-boiling residue and an organosilane and (B) contacting the mixture with hydrogen chloride in the presence of a catalytic amount of a catalyst composition effective in promoting the formation of monosilanes from the high-boiling residue. A preferred catalyst composition comprises aluminum trichloride, at least a portion of which may be formed in situ during conduct of the direct process and isolation of the high-boiling residue.
摘要翻译：在通常称为“直接方法”的过程中，由有机氯化物与硅准金属反应产生的高沸点残余物生产单硅烷的氢氯化方法。该方法包括（A）形成包含高沸点残余物和有机硅烷的混合物，和（B）在催化量催化剂组合物存在下使该混合物与氯化氢接触，该催化剂组合物有效促进从高沸点残留物形成单硅烷，沸腾残渣。优选的催化剂组合物包含三氯化铝，其中至少一部分可在进行直接方法和高沸点残余物的分离过程中原位形成。

3. 发明授权

US5627298A One step process for converting high-boiling residue from direct process to monosilanes 失效
标题翻译：将高沸点残余物从直接过程转化为单硅烷的一步法
公开(公告)号：US5627298A
公开(公告)日：1997-05-06
申请号：US662576
申请日：1996-06-13
申请人： Steven K. Freeburne , Robert F. Jarvis, Jr.
发明人： Steven K. Freeburne , Robert F. Jarvis, Jr.
IPC分类号： C01B33/107 , C07F7/12 , C07F7/16 , C07F7/08
CPC分类号： C07F7/16 , C07F7/128
摘要： A one-step process for the production of monosilanes from the high-boiling residue resulting from the reaction of organochlorides with silicon metalloid in a process typically referred to as the "direct process." The process comprises contacting a mixture comprising the high-boiling residue, an organotrichlorosilane, and hydrogen chloride with a catalytic amount of catalyst composition effective in promoting the formation of monosilanes from the high-boiling residue. A preferred catalyst composition comprises aluminum trichloride, at least a portion of which may be formed in situ during conduct of the direct process and isolation of the high-boiling residue. Typically, the monosilane product of the present process comprises almost exclusively methyltrichlorosilane and tetrachlorosilane.
摘要翻译：在通常称为“直接法”的过程中，由有机氯化物与硅准金属反应产生的高沸点残余物生产单硅烷的一步法。该方法包括使包含高沸点残余物，有机三氯硅烷和氯化氢的混合物与催化剂量的催化剂组合物接触，所述催化剂组合物有效促进从高沸点残余物形成单硅烷。优选的催化剂组合物包含三氯化铝，其中至少一部分可以在进行直接过程和高沸点残余物的分离过程中就地形成。通常，本方法的单硅烷产物几乎仅包括甲基三氯硅烷和四氯硅烷。

4. 发明授权

US5110768A Rapid solid-state synthesis of refractory materials 失效
$Rapid solid-state synthesis of refractory materials$
标题翻译：快速固态合成耐火材料
公开(公告)号：US5110768A
公开(公告)日：1992-05-05
申请号：US647380
申请日：1991-01-28
申请人： Richard B. Kaner , Philippe R. Bonneau , Edward G. Gillan , John B. Wiley , Robert F. Jarvis, Jr. , Rande Treece
发明人： Richard B. Kaner , Philippe R. Bonneau , Edward G. Gillan , John B. Wiley , Robert F. Jarvis, Jr. , Rande Treece
IPC分类号： C01B21/06 , C01B21/068 , C01B21/076 , C01B25/08 , C01B31/30 , C01B31/34 , C01B31/36 , C01B33/06
CPC分类号： B82Y30/00 , C01B21/06 , C01B21/068 , C01B21/0763 , C01B25/08 , C01B31/30 , C01B31/34 , C01B31/36 , C01B33/06 , C01B21/0615 , C01B21/0635 , C01P2002/77 , C01P2004/64 , C01P2006/80
摘要： A process for producing a refractory material having the form TB.sub.o, e.g. zirconium nitride (ZrN), includes a first step of mixing a first salt having the form TX.sub.n, e.g. zirconium tetrachloride (ZrCl.sub.4) and a second salt having the form A.sub.m B, e.g. lithium nitride (Li.sub.3 N) in a ratio of n/m in a container. The process also includes a second step of igniting the mixture of the first and second salts, e.g. ZrCl.sub.4 and Li.sub.3 N, whereby the refractory material, e.g. ZrN, is produced along with byproducts having forms nAX and (n/m-o)B, e.g. 4LiCl and (1/6)N.sub.2, respectively. The process further includes a third step of separating the refractory material from the byproducts by solvent extraction. The stoichiometric ratio of the second salt to the first salt is n/m, e.g. 4/3. T is selected from the group consisting of transition metals, e.g. zirconium, and tetrelides, i.e. carbon, silicon, germanium, tin and lead. X is selected from the halide group consisting of fluorine, chlorine, bromine and iodine. A is selected from the group consisting of alkali metals, i.e. lithium, sodium, potassium, rubidium and cesium, and alkaline earth metals, i.e. beryllium, magnesium, calcium, strontium and barium. B is a base selected from the group consisting of pnictides, i.e. nitrogen, hosphorus, arsenic, antimony and bismuth, and tetrelides, i.e. carbon, silicon, germanium, tin and lead, m and n are integers and o is a fraction, e.g. 3/3=1.
摘要翻译：制备具有TBo形式的耐火材料的方法，例如氮化锆（ZrN），包括混合具有形式TXn的第一盐的第一步骤，例如，四氯化锆（ZrCl 4）和具有AmB形式的第二盐，例如氮化锂（Li 3 N）在容器中的比率为n / m。该方法还包括点燃第一和第二盐的混合物的第二步骤，例如， ZrCl 4和Li 3 N，由此使耐火材料例如。 ZrN与具有形式nAX和（n / m-o）B的副产物一起产生，例如。 4LiCl和（1/6）N2。该方法还包括通过溶剂萃取将耐火材料与副产物分离的第三步骤。第二盐与第一盐的化学计量比为n / m，例如 4/3。 T选自过渡金属，例如锆和四氢呋喃，即碳，硅，锗，锡和铅。 X选自氟，氯，溴和碘组成的卤化物基团。 A选自碱金属，即锂，钠，钾，铷和铯以及碱土金属，即铍，镁，钙，锶和钡。 B是选自pnictides（即氮，霍氏，砷，锑和铋）和tetrel（即碳，硅，锗，锡和铅）的基团，m和n是整数，o是一个馏分， 3/3 = 1。

5. 发明授权

US5430168A Alumimum trichloride catalyzed hydrogenation of high-boiling residue from direct process 失效
标题翻译：三氯化铝催化氢化来自直接过程的高沸点残留物
公开(公告)号：US5430168A
公开(公告)日：1995-07-04
申请号：US329758
申请日：1994-10-27
申请人： Stephen P. Ferguson , Robert F. Jarvis, Jr. , Brian M. Naasz , Kimberly K. Oltmanns , Gordon L. Warrick , Darrel L. Whiteley
发明人： Stephen P. Ferguson , Robert F. Jarvis, Jr. , Brian M. Naasz , Kimberly K. Oltmanns , Gordon L. Warrick , Darrel L. Whiteley
IPC分类号： B01J27/10 , C07B61/00 , C07F7/08 , C07F7/12
CPC分类号： C07F7/0896 , C07F7/128
摘要： A process for the production of monosilanes from the high-boiling residue resulting from the reaction of organohalides with silicon metalloid in a process typically referred to as the "direct process." The present process comprises forming a mixture comprising an organotrihalosilane and the high-boiling residue in the presence of hydrogen gas and a catalytic amount of aluminum trichloride. The present process results in consumption of the organotrihalosilane rather than a net increase which typically occurs in processes for hydrogenation of the high-boiling residue. At least a portion of the catalytic amount of aluminum trichloride may be formed in situ during conduct of the direct process and isolation of the high-boiling residue.
摘要翻译：在通常称为“直接法”的过程中，由有机卤化物与硅准金属反应产生的高沸点残留物生产单硅烷的方法。本方法包括在氢气和催化量的三氯化铝的存在下形成包含有机三卤硅烷和高沸点残余物的混合物。本方法导致有机三卤代硅烷的消耗，而不是通常在高沸点残余物的氢化方法中发生的净增加。催化量的三氯化铝的至少一部分可以在进行直接过程和高沸点残余物的分离期间原位形成。

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