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1. 发明授权

US08845838B2 Method for producing a steering wheel 有权
标题翻译：方向盘的制造方法
公开(公告)号：US08845838B2
公开(公告)日：2014-09-30
申请号：US12619724
申请日：2009-11-17
申请人： Robert Binder , Maik Adelberger , Norbert Zwiessler
发明人： Robert Binder , Maik Adelberger , Norbert Zwiessler
IPC分类号： B27D1/08 , B62D1/06
CPC分类号： B62D1/06 , B27D1/08 , Y10T74/20834 , Y10T156/1044 , Y10T156/1048 , Y10T156/1062
摘要： A method for producing a steering wheel (10) including a multilayered decorative trim (16) comprises the following steps: providing a multilayered body composed of flat layers joined to each other, the body being bent transversely or perpendicular to the plane of the layers into a shape adapted to the geometry of a steering wheel body part (14), cutting off a thin arcuate decorative layer (26) from a lateral surface of the body, in particular essentially perpendicular to the bending axis, and adapting said decorative layer (26) to and applying it onto said steering wheel body part (14).
摘要翻译：一种用于制造包括多层装饰装饰件（16）的方向盘（10）的方法包括以下步骤：提供由彼此连接的平坦层构成的多层体，所述主体横向或垂直于所述层的平面弯曲成一种适于方向盘主体部分（14）的几何形状的形状，从主体的侧表面，特别是基本上垂直于弯曲轴线切断薄的弧形装饰层（26），并使所述装饰层（26 ）并将其施加到所述方向盘主体部分（14）上。

2. 发明申请

US20130344692A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH FLUORINE PASSIVATION 有权
标题翻译：用氟化物钝化整合电路的方法
公开(公告)号：US20130344692A1
公开(公告)日：2013-12-26
申请号：US13529327
申请日：2012-06-21
申请人： Dina Triyoso , Elke Erben , Robert Binder
发明人： Dina Triyoso , Elke Erben , Robert Binder
IPC分类号： H01L21/283 , H01L21/31
CPC分类号： H01L21/3105 , H01L21/02181 , H01L21/02343 , H01L21/02359 , H01L21/28185 , H01L21/3115 , H01L29/513 , H01L29/517
摘要： Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate and forming a gate structure on the semiconductor substrate. The gate includes a high-k dielectric material. In the method, a fluorine-containing liquid is contacted with the high-k dielectric material and fluorine is incorporated into the high-k dielectric material.
摘要翻译：提供了制造集成电路的方法。在一个实施例中，制造集成电路的方法包括提供半导体衬底并在半导体衬底上形成栅极结构。栅极包括高k电介质材料。在该方法中，含氟液体与高k电介质材料接触，并且氟被并入到高k电介质材料中。

3. 发明申请

US20130224927A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH NARROW, METAL FILLED OPENINGS 有权
标题翻译：用NARROW，金属填充开口制造集成电路的方法
公开(公告)号：US20130224927A1
公开(公告)日：2013-08-29
申请号：US13408291
申请日：2012-02-29
申请人： Sven Schmidbauer , Dina H. Triyoso , Elke Erben , Hao Zhang , Robert Binder
发明人： Sven Schmidbauer , Dina H. Triyoso , Elke Erben , Hao Zhang , Robert Binder
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/51 , H01L29/7833
摘要： Methods are provided for fabricating an integrated circuit that includes metal filled narrow openings. In accordance with one embodiment a method includes forming a dummy gate overlying a semiconductor substrate and subsequently removing the dummy gate to form a narrow opening. A layer of high dielectric constant insulator and a layer of work function-determining material are deposited overlying the semiconductor substrate. The layer of work function-determining material is exposed to a nitrogen ambient in a first chamber. A layer of titanium is deposited into the narrow opening in the first chamber in the presence of the nitrogen ambient to cause the first portion of the layer of titanium to be nitrided. The deposition of titanium continues, and the remaining portion of the layer of titanium is deposited as substantially pure titanium. Aluminum is deposited overlying the layer of titanium to fill the narrow opening and to form a gate electrode.
摘要翻译：提供了用于制造包括金属填充的窄开口的集成电路的方法。根据一个实施例，一种方法包括形成覆盖半导体衬底的虚拟栅极，随后去除虚拟栅极以形成窄的开口。在半导体衬底上沉积一层高介电常数绝缘体和一层功函数确定材料。工作层功能确定材料暴露于第一室中的氮气环境。在氮气环境的存在下，将钛层沉积在第一室中的窄开口中，以使钛层的第一部分被氮化。钛的沉积继续，并且钛层的剩余部分沉积为基本上纯的钛。沉积铝覆盖在钛层上以填充窄开口并形成栅电极。

4. 发明授权

US08383500B2 Semiconductor device formed by a replacement gate approach based on an early work function metal 有权
标题翻译：基于早期功能金属的替代门法形成的半导体器件
公开(公告)号：US08383500B2
公开(公告)日：2013-02-26
申请号：US12914234
申请日：2010-10-28
申请人： Gerd Marxsen , Joachim Metzger , Robert Binder , Markus Lenski
发明人： Gerd Marxsen , Joachim Metzger , Robert Binder , Markus Lenski
IPC分类号： H01L21/3205
CPC分类号： H01L21/823842 , H01L21/823807 , H01L21/823857 , H01L29/4966 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66583 , H01L29/7833 , H01L29/7843 , H01L29/7845
摘要： In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.
摘要翻译：在替代栅极方法中，可以在早期制造阶段（即，在沉积栅极层堆叠时）提供一个功函数金属，从而减少后续制造阶段所需的沉积步骤的数量。因此，与传统的替代栅极方法相比，基于优越的工艺条件，可以将另外的功函数金属和电极金属填充到栅极沟槽中。

5. 发明申请

US20100221906A1 ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP LAYER AFTER DEPOSITION 有权
标题翻译：通过在沉积后配置金属盖层来提高高K栅格叠层的完整性
公开(公告)号：US20100221906A1
公开(公告)日：2010-09-02
申请号：US12711481
申请日：2010-02-24
申请人： Joachim Metzger , Robert Binder , Markus Lenski , Klaus Hempel
发明人： Joachim Metzger , Robert Binder , Markus Lenski , Klaus Hempel
IPC分类号： H01L21/28
CPC分类号： H01L29/7833 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/66772
摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.
摘要翻译：在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

6. 发明授权

US07741581B2 Heatable steering wheel 有权
标题翻译：令人放心的方向盘
公开(公告)号：US07741581B2
公开(公告)日：2010-06-22
申请号：US11241664
申请日：2005-09-30
申请人： Martin Kreuzer , Jan Isensee , Robert Binder , Christian Stricker
发明人： Martin Kreuzer , Jan Isensee , Robert Binder , Christian Stricker
IPC分类号： B62D1/06
CPC分类号： B62D1/065 , B62D1/06 , Y10T74/20834 , Y10T74/2087
摘要： A heatable steering wheel includes a steering wheel blank, a heating mat wrapped around the steering wheel blank, a first, visible hard sheathing whose surface is refinished after having been installed, a second, visible softer sheathing, both of the sheathings abutting each other in an abutting area, and a coupling element in the abutting area. The coupling element, as seen from the outside, has a depression and that, starting from the first sheathing, extends under the abutting area all the way to an abutting edge of the second sheathing. The heating mat extends continuously under the first sheathing and under the coupling element all the way to under the second sheathing.
摘要翻译：可加热方向盘包括方向盘坯料，缠绕在方向盘坯料上的加热垫，第一可见的硬质护套，其表面在安装之后被修补，第二可见较软的护套，两个护套彼此邻接邻接区域和邻接区域中的联接元件。从外部看，联接元件具有凹陷，并且从第一护套开始，在邻接区域下方一直延伸到第二护套的邻接边缘。加热垫在第一护套下方连续地延伸并且在连接元件下方一直延伸到第二护套下方。

7. 发明申请

US20100147103A1 METHOD FOR PRODUCING A STEERING WHEEL 有权
标题翻译：生产转向轮的方法
公开(公告)号：US20100147103A1
公开(公告)日：2010-06-17
申请号：US12619724
申请日：2009-11-17
申请人： Robert Binder , Maik Adelberger , Norbert Zwiessler
发明人： Robert Binder , Maik Adelberger , Norbert Zwiessler
IPC分类号： B62D1/06 , B62D1/04 , B32B37/12
CPC分类号： B62D1/06 , B27D1/08 , Y10T74/20834 , Y10T156/1044 , Y10T156/1048 , Y10T156/1062
摘要： A method for producing a steering wheel (10) including a multilayered decorative trim (16) comprises the following steps: providing a multilayered body composed of flat layers joined to each other, the body being bent transversely or perpendicular to the plane of the layers into a shape adapted to the geometry of a steering wheel body part (14), cutting off a thin arcuate decorative layer (26) from a lateral surface of the body, in particular essentially perpendicular to the bending axis, and adapting said decorative layer (26) to and applying it onto said steering wheel body part (14).
摘要翻译：一种用于制造包括多层装饰装饰件（16）的方向盘（10）的方法包括以下步骤：提供由彼此连接的平坦层构成的多层体，所述主体横向或垂直于所述层的平面弯曲成一种适于方向盘主体部分（14）的几何形状的形状，从主体的侧表面，特别是基本上垂直于弯曲轴线切断薄的弧形装饰层（26），并使所述装饰层（26 ）并将其施加到所述方向盘主体部分（14）上。

8. 发明授权

US08653605B2 Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum 有权
标题翻译：通过使用镧在晶体管制造后的高K栅电极结构中的功函数调整
公开(公告)号：US08653605B2
公开(公告)日：2014-02-18
申请号：US13689992
申请日：2012-11-30
申请人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
发明人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
IPC分类号： H01L21/70 , H01L27/088
CPC分类号： H01L27/088 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.
摘要翻译：高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如作为氮化钛。为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

9. 发明授权

US08652890B2 Methods for fabricating integrated circuits with narrow, metal filled openings 有权
标题翻译：用于制造具有窄的金属填充开口的集成电路的方法
公开(公告)号：US08652890B2
公开(公告)日：2014-02-18
申请号：US13408291
申请日：2012-02-29
申请人： Sven Schmidbauer , Dina H. Triyoso , Elke Erben , Hao Zhang , Robert Binder
发明人： Sven Schmidbauer , Dina H. Triyoso , Elke Erben , Hao Zhang , Robert Binder
IPC分类号： H01L21/338
CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/51 , H01L29/7833
摘要： Methods are provided for fabricating an integrated circuit that includes metal filled narrow openings. In accordance with one embodiment a method includes forming a dummy gate overlying a semiconductor substrate and subsequently removing the dummy gate to form a narrow opening. A layer of high dielectric constant insulator and a layer of work function-determining material are deposited overlying the semiconductor substrate. The layer of work function-determining material is exposed to a nitrogen ambient in a first chamber. A layer of titanium is deposited into the narrow opening in the first chamber in the presence of the nitrogen ambient to cause the first portion of the layer of titanium to be nitrided. The deposition of titanium continues, and the remaining portion of the layer of titanium is deposited as substantially pure titanium. Aluminum is deposited overlying the layer of titanium to fill the narrow opening and to form a gate electrode.
摘要翻译：提供了用于制造包括金属填充的窄开口的集成电路的方法。根据一个实施例，一种方法包括形成覆盖半导体衬底的虚拟栅极，随后去除虚拟栅极以形成窄的开口。在半导体衬底上沉积一层高介电常数绝缘体和一层功函数确定材料。工作层功能确定材料暴露于第一室中的氮气环境。在氮气环境的存在下，将钛层沉积在第一室中的窄开口中，以使钛层的第一部分被氮化。钛的沉积继续，并且钛层的剩余部分沉积为基本上纯的钛。沉积铝覆盖在钛层上以填充窄开口并形成栅电极。

10. 发明授权

US08343837B2 Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum 有权
标题翻译：通过使用镧在晶体管制造后的高k栅电极结构中的功函数调整
公开(公告)号：US08343837B2
公开(公告)日：2013-01-01
申请号：US12691192
申请日：2010-01-21
申请人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
发明人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
IPC分类号： H01L21/8234 , H01L21/8238
CPC分类号： H01L27/088 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.
摘要翻译：高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如作为氮化钛。为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

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