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1. 发明授权

US5141817A Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability 失效
标题翻译：具有嵌入式间隙填充RIE蚀刻的介电结构阻止具有高热稳定性的聚合材料
公开(公告)号：US5141817A
公开(公告)日：1992-08-25
申请号：US366089
申请日：1989-06-13
申请人： Edward D. Babich , Michael Hatzakis , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Jane M. Shaw
发明人： Edward D. Babich , Michael Hatzakis , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Jane M. Shaw
IPC分类号： B32B7/02 , C08L83/14 , H01B3/18 , H01L21/302 , H01L21/3065 , H01L21/48 , H01L23/14 , H01L23/498
CPC分类号： H01L21/4807 , C08L83/14 , H01L23/145 , H01L23/49866 , H01L2924/0002 , Y10S428/901 , Y10T428/31663 , Y10T428/31721
摘要： Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.
摘要翻译：包含其中嵌入有聚合物反应离子蚀刻屏障的电介质材料的结构。优选的介电材料是聚合物，优选聚酰亚胺材料。 RIE蚀刻阻挡层是具有高热稳定性且具有选自金属环丁烷，金属和乙烯基的交联成分的芳香族成分的共聚物。蚀刻阻挡层被沉积为无溶剂的液体，其可以填充介电材料和嵌入其中的电导体之间的间隙。液体聚合物固化成固体不溶性状态。具有嵌入其中的电导体的结构对于电子应用是有用的。

2. 发明授权

US5565529A Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability 失效
公开(公告)号：US5565529A
公开(公告)日：1996-10-15
申请号：US85465
申请日：1993-06-30
申请人： Edward D. Babich , Michael Hatzakis , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Jane M. Shaw
发明人： Edward D. Babich , Michael Hatzakis , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Jane M. Shaw
IPC分类号： B32B7/02 , C08L83/14 , H01B3/18 , H01L21/302 , H01L21/3065 , H01L21/48 , H01L23/14 , H01L23/498 , C08L83/00
CPC分类号： H01L21/4807 , C08L83/14 , H01L23/145 , H01L23/49866 , H01L2924/0002 , Y10S428/901 , Y10T428/31663 , Y10T428/31721
摘要： Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.

3. 发明授权

US4308592A Patterned kill of magnetoresistive layer in bubble domain chip 失效
标题翻译：在气泡区芯片中图案化的磁阻层的杀死
公开(公告)号：US4308592A
公开(公告)日：1981-12-29
申请号：US53489
申请日：1979-06-29
申请人： Richard P. McGouey
发明人： Richard P. McGouey
IPC分类号： G11C11/14 , H01F10/00 , H01F41/34 , G11C19/08
CPC分类号： H01F41/34
摘要： A technique and structure is described in which bubble domain devices can be made, and particularly bubble domain devices comprisng contiguous propagation elements. A thin magnetoresistive layer, such as permalloy, is blanket deposited over a substrate including a bubble domain film, and is then selectively "poisoned" to destroy its magnetization except in those areas where thin sensors are to be provided. The poisoned portions of the magnetoresistive layer serve as a plating base for conductor metallurgy which can be used as an ion implantation mask, and for carrying electrical current. This eliminates some process steps which had been required in the prior art, and does not leave magnetic permalloy in those areas of the bubble domain chip were they would adversely affect propagation of domains by ion implanted contiguous propagation elements. This technique can also be used to make bubble domain devices having gapped propagation elements.
摘要翻译：描述了可以制造气泡域装置的技术和结构，特别是包括连续传播元件的气泡域装置。诸如坡莫合金之类的薄磁阻层被覆盖在包括气泡区域膜的衬底上，然后被选择性地“中毒”以破坏其磁化，除了在那些提供薄传感器的区域中。磁阻层的中毒部分用作导体冶金的电镀基底，其可以用作离子注入掩模，并且用于承载电流。这消除了现有技术中已经需要的一些工艺步骤，并且在气泡区域芯片的那些区域中不留下磁性坡莫合金，它们会不利地影响离子注入的连续传播元件的畴的传播。该技术也可用于制备具有间隙传播元件的气泡域装置。

4. 发明授权

US5286599A Base developable negative photoresist composition and use thereof 失效
标题翻译：碱显影性负性光致抗蚀剂组合物及其用途
公开(公告)号：US5286599A
公开(公告)日：1994-02-15
申请号：US766596
申请日：1991-09-26
申请人： Edward D. Babich , Eileen A. Galligan , Jeffrey D. Gelorme , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Russell J. Serino , David F. Witman
发明人： Edward D. Babich , Eileen A. Galligan , Jeffrey D. Gelorme , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Russell J. Serino , David F. Witman
IPC分类号： G03F7/004 , G03F7/029 , G03F7/038 , G03F7/075 , H01L21/027 , H01L21/30 , G03C1/72 , G03C1/73
CPC分类号： G03F7/038 , Y10S430/107 , Y10S430/11 , Y10S430/115
摘要： A composition containing novolak polymer, and/or poly(p-vinylphenol), an organometallic material, an amino polymer a cationic photocatalyst. The composition can also include a cosensitizer material which makes a composition sensitive to near U.V. radiation.
摘要翻译：含有酚醛清漆聚合物和/或聚（对乙烯基苯酚），有机金属材料，氨基聚合物阳离子光催化剂的组合物。组合物还可以包括使组合物对近紫外线敏感的敏感剂材料。辐射。

5. 发明授权

US3967002A Method for making high density magnetic bubble domain system 失效
标题翻译：制造高密度磁泡区域系统的方法
公开(公告)号：US3967002A
公开(公告)日：1976-06-29
申请号：US537797
申请日：1974-12-31
申请人： George S. Almasi , Robert J. Hendel , George E. Keefe , Yeong S. Lin , Richard P. McGouey
发明人： George S. Almasi , Robert J. Hendel , George E. Keefe , Yeong S. Lin , Richard P. McGouey
IPC分类号： G11C11/14 , G11C19/08 , H01F10/10 , H01F41/14 , H01F41/34 , C04B35/00
CPC分类号： G11C19/0816 , G11C19/0858 , G11C19/0866 , H01F10/10 , H01F41/34
摘要： A method for making a high density magnetic bubble domain system including the functions of read, write, storage, transfer, and annihilation. Only three masking steps are required, of which only one requires critical alignment. The proces makes use of the fact that magnetic disks can be placed on non ion implanted regions without adversely affecting the propagation properties of the implanted regions. Thus, the magnetic disks can be used to define ion implantation masks as well as for providing functions such as generation, propagation, reading, and annihilation. Magnetic elements for generation, storage and propagation, reading and annihilation are deposited in the same non-critical masking step, while all condutors used for writing, reading, and transfer are deposited by a single masking step requiring critical alignment.
摘要翻译：一种制造高密度磁泡区域系统的方法，包括读，写，存储，传输和湮灭的功能。只需要三个屏蔽步骤，其中只有一个需要临界对齐。该过程利用以下事实：磁盘可以放置在非离子注入区域上，而不会不利地影响植入区域的传播特性。因此，磁盘可用于限定离子注入掩模以及用于提供诸如生成，传播，读取和湮灭的功能。用于产生，存储和传播，读取和湮灭的磁性元件沉积在相同的非关键掩蔽步骤中，而用于写入，读取和传输的所有调节器通过需要临界对准的单个掩蔽步骤进行沉积。

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