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    • 1. 发明申请
    • QUANTUM CASCADE LASER
    • 量子CASCADE激光
    • US20090213890A1
    • 2009-08-27
    • US12395576
    • 2009-02-27
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQije WangFederico Capasso
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQije WangFederico Capasso
    • H01S5/343
    • H01S5/3402B82Y20/00
    • A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
    • 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别(1和1'); 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中,基本设计还具有能量间隔 E54大约90 meV,1级和1级不必在空间上相互接近,只要等级2与这两个级别都有重大的重叠。 在第三版本中,从级别2向下转换至少有三个最终级别(1,1'和1“)。级别1,1'和1”中的每一个具有不均匀的平方 波函数分布。
    • 3. 发明授权
    • Quantum cascade laser: bias-neutral design
    • 量子级联激光器:偏置中性设计
    • US08121164B1
    • 2012-02-21
    • US12976856
    • 2010-12-22
    • Arkadiy LyakhRichard MauliniAlexei TsekounC. Kumar N. Patel
    • Arkadiy LyakhRichard MauliniAlexei TsekounC. Kumar N. Patel
    • H01S5/00
    • H01S5/3402B82Y20/00H01S5/3403H01S5/3407
    • A quantum cascade laser (QCL) having a bias-neutral design and a semiconductor with multiple layers of AlxIn1-xAs/InyGa1-yAs. The first active region barrier has a thickness of less than fourteen angstroms, and the second active region barrier has a thickness of less than eleven angstroms. The lower active region wavefunction overlaps with each of the injector level wavefunctions. Also, the laser transition is vertical at a bias close to roll-over. The injector level 3′ is above a lower laser level 3, the injector level 2′ is below the lower laser level 3, and the active region level 2 is confined to the active region. The lower laser level 3 is separated from the active region level 2 by the energy of the LO phonon. The remaining active region states and the remaining injector states are either above the lower laser level 3 or significantly below the active region level 2.
    • 具有偏置中性设计的量子级联激光器(QCL)和具有多层AlxIn1-xAs / InyGa1-yAs的半导体。 第一有源区屏障的厚度小于十四埃,第二有源区屏障的厚度小于十一埃。 下部有源区波函数与每个喷射器水平波函数重叠。 此外,激光转换在靠近翻转的偏压下是垂直的。 喷射器水平3'在较低的激光水平3之上,喷射器水平2'在下激光水平3之下,并且有源区域电平2被限制在有源区。 较低的激光水平3通过LO声子的能量与有源区域2相分离。 剩余的活动区域状态和剩余的喷射器状态或者在较低的激光水平3之上或显着低于有源区域水平2。
    • 7. 发明申请
    • QUANTUM CASCADE LASER AMPLIFIER WITH AN ANTI-REFLECTION COATING INCLUDING A LAYER OF YTTRIUM FLUORIDE
    • 具有防反射涂层的QUANTUM CASCADE激光放大器,包括一层氟化物
    • US20100046568A1
    • 2010-02-25
    • US12518565
    • 2007-11-20
    • Richard MauliniStephane BlaserJerome Faist
    • Richard MauliniStephane BlaserJerome Faist
    • H01S5/028
    • G02B1/115B82Y20/00H01S5/028H01S5/3401
    • A quantic cascade laser amplifier (12) having an active zone (20) includes a stack of raw layers of semi-conductor materials formed in an epitaxial manner on a substrate layer (16) of indium phosphide (InP) or gallium arsenide (GaAs) bearing the active zone (20), and a vertical anti-reflection coating (34) that covers an outlet face (28) of the laser radiation made of materials having given refraction indices and a predetermined thickness so that the entire laser radiation can flow through the outlet face. The anti-reflection coating (34) includes a first layer (36) having a first predetermined refraction index (n1) lower than the predetermined refraction index (nD), and at least a second layer (38) having a second refraction index (n2) higher than the predetermined refraction index (nD), characterised in that the first layer (36) of the anti-reflection coating (34) is made of yttrium fluoride (YF3).
    • 具有有源区(20)的量子级联激光放大器(12)包括在铟磷化物(InP)或砷化镓(GaAs)的衬底层(16)上以外延形式形成的半导体材料的原始层堆叠, 承载有源区(20)和垂直防反射涂层(34),其覆盖由具有给定折射率和预定厚度的材料制成的激光辐射的出口面(28),使得整个激光辐射可以流过 出口面。 防反射涂层(34)包括具有低于预定折射率(nD)的第一预定折射率(n1)的第一层(36)和至少具有第二折射率(n2)的第二层(38) ),其特征在于防反射涂层(34)的第一层(36)由氟化钇(YF 3)制成。
    • 10. 发明授权
    • Quantum cascade laser
    • 量子级联激光器
    • US08014430B2
    • 2011-09-06
    • US12395576
    • 2009-02-27
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQijie WangFederico Capasso
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQijie WangFederico Capasso
    • H01S5/00
    • H01S5/3402B82Y20/00
    • A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
    • 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别(1和1'); 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中,基本设计还具有能量间隔 E54大约90 meV,1级和1级不必在空间上相互接近,只要等级2与这两个级别都有重大的重叠。 在第三版本中,对于从级别2向下转换,至少有三个最终级别(1,1'和1“)。级别1,1'和1”中的每一个具有非均匀平方波函数 分配。