专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120133422A1 DIE TEMPERATURE SENSOR CIRCUIT 有权
标题翻译： DIE温度传感器电路
公开(公告)号：US20120133422A1
公开(公告)日：2012-05-31
申请号：US12955598
申请日：2010-11-29
申请人： Edevaldo Pereira da Silva, JR. , Ricardo Pureza Coimbra
发明人： Edevaldo Pereira da Silva, JR. , Ricardo Pureza Coimbra
IPC分类号： H03K3/011
CPC分类号： G01K7/01
摘要： A die temperature sensor circuit (200) includes an amplifier (203) that has first and second stages of amplification and that has bipolar transistors (201 and 202) as an input differential pair. The bipolar transistors have different current densities. A difference between base-emitter voltages of the bipolar transistors is proportional to absolute temperature of the bipolar transistors. The bipolar transistors also provide amplification for the first stage of amplification. Multiple feedback loops maintain a same ratio between the current densities of the bipolar transistors over temperature by changing collector currents that bias the bipolar transistors. A feedback loop includes a second stage of amplification and such feedback loop cancels effect that base currents of the bipolar transistors have on an output signal of the die temperature sensor circuit.
摘要翻译：芯片温度传感器电路（200）包括放大器（203），放大器（203）具有第一和第二级放大，并具有作为输入差分对的双极晶体管（201和202）。双极晶体管具有不同的电流密度。双极晶体管的基极 - 发射极之间的差异与双极型晶体管的绝对温度成正比。双极晶体管还为第一级放大提供放大。通过改变偏置双极晶体管的集电极电流，多个反馈环路在双极晶体管的电流密度与温度之间保持相同的比率。反馈回路包括第二级放大，并且这种反馈回路消除了双极晶体管的基极电流对芯片温度传感器电路的输出信号的影响。

2. 发明授权

US08378735B2 Die temperature sensor circuit 有权
标题翻译：模温传感器电路
公开(公告)号：US08378735B2
公开(公告)日：2013-02-19
申请号：US12955598
申请日：2010-11-29
申请人： Edevaldo Pereira Da Silva, Jr. , Ricardo Pureza Coimbra
发明人： Edevaldo Pereira Da Silva, Jr. , Ricardo Pureza Coimbra
IPC分类号： H01L35/00 , H01L37/00 , H03K3/42 , H03K17/78
CPC分类号： G01K7/01
摘要： A die temperature sensor circuit (200) includes an amplifier (203) that has first and second stages of amplification and that has bipolar transistors (201 and 202) as an input differential pair. The bipolar transistors have different current densities. A difference between base-emitter voltages of the bipolar transistors is proportional to absolute temperature of the bipolar transistors. The bipolar transistors also provide amplification for the first stage of amplification. Multiple feedback loops maintain a same ratio between the current densities of the bipolar transistors over temperature by changing collector currents that bias the bipolar transistors. A feedback loop includes a second stage of amplification and such feedback loop cancels effect that base currents of the bipolar transistors have on an output signal of the die temperature sensor circuit.
摘要翻译：芯片温度传感器电路（200）包括放大器（203），放大器（203）具有第一和第二级放大，并具有作为输入差分对的双极晶体管（201和202）。双极晶体管具有不同的电流密度。双极晶体管的基极 - 发射极之间的差异与双极型晶体管的绝对温度成正比。双极晶体管还为第一级放大提供放大。通过改变偏置双极晶体管的集电极电流，多个反馈环路在双极晶体管的电流密度与温度之间保持相同的比率。反馈回路包括第二级放大，并且这种反馈回路消除了双极晶体管的基极电流对芯片温度传感器电路的输出信号的影响。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式