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1. 发明申请

US20160009557A1 METHOD FOR CONTINUOUS AND CONTROLLABLE PRODUCTION OF SINGLE WALLED CARBON NANOTUBES 审中-公开
标题翻译：连续可控生产单壁碳纳米管的方法
公开(公告)号：US20160009557A1
公开(公告)日：2016-01-14
申请号：US14794931
申请日：2015-07-09
申请人： Avetik Harutyunyan , Rahul Rao , Nam Hawn Chou
发明人： Avetik Harutyunyan , Rahul Rao , Nam Hawn Chou
IPC分类号： C01B31/02
CPC分类号： B22F9/24 , B01J23/08 , B01J23/462 , B01J35/0013 , B01J37/009 , B01J37/18 , B22F1/0044 , B22F2009/245 , B22F2201/50 , B22F2301/30 , B22F2998/10 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/164 , C01B2202/02 , C01G15/00 , Y10S977/75 , Y10S977/773 , Y10S977/843 , Y10S977/896
摘要： The present disclosure is directed to methods for producing a single-walled carbon nanotube in a chemical vapor deposition (CVD) reactor. The methods comprise contacting liquid catalyst droplets and a carbon source in the reactor, and forming a single walled carbon nanotube at the surface of the liquid catalyst droplets.
摘要翻译：本公开涉及在化学气相沉积（CVD）反应器中制备单壁碳纳米管的方法。所述方法包括在反应器中接触液体催化剂液滴和碳源，并在液体催化剂液滴的表面形成单壁碳纳米管。

2. 发明授权

US07241479B2 Thermal CVD synthesis of nanostructures 失效
标题翻译：纳米结构的热CVD合成
公开(公告)号：US07241479B2
公开(公告)日：2007-07-10
申请号：US10646360
申请日：2003-08-22
申请人： Apparao M. Rao , Rahul Rao
发明人： Apparao M. Rao , Rahul Rao
IPC分类号： C23C16/00 , B05D1/18
CPC分类号： B82Y30/00 , C30B25/00 , C30B29/605 , Y10T428/31678
摘要： The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.
摘要翻译：本发明一般涉及用于生产纳米线和纳米带的新方法和可以根据所公开的方法制备的新型纳米结构。该方法可以在环境压力下进行，并且包括将金属定位在反应室中，将该室加热至金属熔化的温度，并使气相反应物流过该室。气相反应物和熔融金属可以通过热CVD工艺反应，并且可以在熔融金属的表面上形成纳米结构。纳米结构的尺寸可以通过反应温度来控制。

3. 发明申请

US20060082384A1 Multi-threshold complementary metal-oxide semiconductor (MTCMOS) bus circuit and method for reducing bus power consumption via pulsed standby switching 失效
标题翻译：多阈值互补金属氧化物半导体（MTCMOS）总线电路和通过脉冲待机切换降低总线功耗的方法
公开(公告)号：US20060082384A1
公开(公告)日：2006-04-20
申请号：US10965106
申请日：2004-10-14
申请人： Harmander Deogun , Kevin Nowka , Rahul Rao
发明人： Harmander Deogun , Kevin Nowka , Rahul Rao
IPC分类号： H03K19/003
CPC分类号： H03K19/0016
摘要： A multi-threshold complementary metal-oxide semiconductor (MTCMO) bus circuit reduces bus power consumption via a reduced circuit leakage standby and pulsed control of standby mode so that the advantages of MTCMOS repeater design are realized in dynamic operation. A pulse generator pulses the high-threshold voltage power supply rail standby switching devices in response to changes detected at the bus circuit inputs. The delay penalty associated with leaving the standby mode is overcome by reducing cross-talk induced delay via a cross-talk noise minimization encoding and decoding scheme. A subgroup of bus wires is encoded and decoded, simplifying the encoding, decoding and change detection logic and results in the bus subgroup being taken out of standby mode only when changes occur in one or more of the subgroup inputs, further reducing the power consumption of the overall bus circuit.
摘要翻译：多阈值互补金属氧化物半导体（MTCMO）总线电路通过减少电路泄漏待机和待机模式的脉冲控制来降低总线功耗，从而在动态操作中实现MTCMOS中继器设计的优点。响应于在总线电路输入处检测到的变化，脉冲发生器脉冲高阈值电压电源轨备用开关器件。通过经由串扰噪声最小化编码和解码方案减少串扰引起的延迟来克服与待机模式相关联的延迟代价。总线线路的子组编码和解码，简化了编码，解码和改变检测逻辑，并且使总线子组仅在一个或多个子组输入中发生变化时将其从待机模式中取出，进一步降低了功率消耗整体总线电路。

4. 发明申请

US20050042465A1 Thermal CVD synthesis of nanostructures 失效
标题翻译：纳米结构的热CVD合成
公开(公告)号：US20050042465A1
公开(公告)日：2005-02-24
申请号：US10646360
申请日：2003-08-22
申请人： Apparao Rao , Rahul Rao
发明人： Apparao Rao , Rahul Rao
IPC分类号： B32B9/04 , B32B15/04 , C23C20060101 , C23C16/00 , C23C16/06 , C30B25/00 , C30B29/60
CPC分类号： B82Y30/00 , C30B25/00 , C30B29/605 , Y10T428/31678
摘要： The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.
摘要翻译：本发明一般涉及用于生产纳米线和纳米带的新方法和可以根据所公开的方法制备的新型纳米结构。该方法可以在环境压力下进行，并且包括将金属定位在反应室中，将该室加热至金属熔化的温度，并使气相反应物流过该室。气相反应物和熔融金属可以通过热CVD工艺反应，并且可以在熔融金属的表面上形成纳米结构。纳米结构的尺寸可以通过反应温度来控制。

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