专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140272410A1 ENERGY STORING FRACTAL AND PROCESS THEREFOR 审中-公开
标题翻译：能源储存分析及其过程
公开(公告)号：US20140272410A1
公开(公告)日：2014-09-18
申请号：US13831033
申请日：2013-03-14
申请人： Robert J. Miller , Alevtina White Smirnova
发明人： Robert J. Miller , Alevtina White Smirnova
IPC分类号： H01G11/36
CPC分类号： H01G11/36 , B82Y30/00 , H01M4/583 , Y02E60/13 , Y10T428/2918 , Y10T428/292 , Y10T428/30
摘要： A fractal microstructure which includes multi-walled carbon nanotubes suited for customizable volumetric energy and power densities. Electrode monoliths can be formed from a variety of process steps including some or all of RF polymerization, RF coalescence and ripening at intersections, and multi-walled carbon nanotube crosslinking. The resulting nanocomposite is capable of performing all five functions of an electrode while at the same time offering robust mechanical strength and significantly improved energy storage capabilities through, among other things, intra- and inter-particle interlocking.
摘要翻译：分形微结构，包括适合于可定制的体积能量和功率密度的多壁碳纳米管。电极整料可以由各种工艺步骤形成，包括RF聚合，交联中的RF聚结和成熟以及多壁碳纳米管交联中的一些或全部。所得的纳米复合材料能够执行电极的所有五个功能，同时通过诸如颗粒内和颗粒间互锁来提供强大的机械强度和显着改善的能量存储能力。

2. 发明授权

US08803751B1 Multiferroic antenna and transmitter 有权
标题翻译：多层天线和发射机
公开(公告)号：US08803751B1
公开(公告)日：2014-08-12
申请号：US12885817
申请日：2010-09-20
申请人： Robert J. Miller , William Preston Geren , Stephen P. Hubbell
发明人： Robert J. Miller , William Preston Geren , Stephen P. Hubbell
IPC分类号： H01Q1/00 , H01Q7/06 , H01Q3/44 , H01L41/00
CPC分类号： H01Q7/06 , H01Q1/28 , H01Q3/44
摘要： A multiferroic element may include a substrate formed on an electrically conductive ground plane. The substrate may be formed from a material having a predetermined elastic modulus. A layer of piezoelectric material may be formed on the substrate. A layer of magnetostrictive material may be bonded to the layer of piezoelectric material. A mechanical strain is created in the layer of piezoelectric material in response to a voltage signal being applied to the multiferroic element. The mechanical strain in the layer of piezoelectric material causes a mechanical strain in the layer of magnetostrictive material to produce a radio frequency magnetic field that is proportional to the voltage signal for generating a radio frequency electromagnetic wave. The predetermined elastic modulus of the substrate is substantially lower than an elastic modulus of the layer of piezoelectric material.
摘要翻译：多铁元件可以包括形成在导电接地平面上的衬底。衬底可以由具有预定弹性模量的材料形成。可以在基板上形成压电材料层。一层磁致伸缩材料可以结合到压电材料层上。响应于施加到多铁元件的电压信号，在压电材料层中产生机械应变。压电材料层中的机械应变引起磁致伸缩材料层中的机械应变，产生与产生射频电磁波的电压信号成比例的射频磁场。基板的预定弹性模量基本上低于压电材料层的弹性模量。

3. 发明授权

US08685847B2 Semiconductor device having localized extremely thin silicon on insulator channel region 有权
标题翻译：半导体器件具有局部极薄的绝缘体上硅沟道区域
公开(公告)号：US08685847B2
公开(公告)日：2014-04-01
申请号：US12912897
申请日：2010-10-27
申请人： Amlan Majumdar , Robert J. Miller , Muralidhar Ramachandran
发明人： Amlan Majumdar , Robert J. Miller , Muralidhar Ramachandran
IPC分类号： H01L21/425
CPC分类号： H01L29/66545 , H01L29/66772 , H01L29/7848 , H01L29/78618 , H01L29/78654
摘要： A method of forming a transistor device includes forming a dummy gate stack structure over an SOI starting substrate, comprising a bulk layer, a global BOX layer over the bulk layer, and an SOI layer over the global BOX layer. Self-aligned trenches are formed completely through portions of the SOI layer and the global BOX layer at source and drain regions. Silicon is epitaxially regrown in the source and drain regions, with a local BOX layer re-established in the epitaxially regrown silicon, adjacent to the global BOX layer. A top surface of the local BOX layer is below a top surface of the global BOX layer. Embedded source and drain stressors are formed in the source and drain regions, adjacent a channel region. Silicide contacts are formed on the source and drain regions. The dummy gate stack structure is removed, and a final gate stack structure is formed.
摘要翻译：一种形成晶体管器件的方法包括：在SOI起始衬底上形成虚拟栅极堆叠结构，其包括体层，体层上的全局BOX层以及全局BOX层上的SOI层。自对准沟槽通过SOI层和源极和漏极区域的全局BOX层的部分完全形成。硅在源极和漏极区域中外延再生长，在外延重新生长的硅中重新建立局部BOX层，邻近全局BOX层。本地BOX层的顶表面位于全局BOX层的顶表面之下。在源极和漏极区域中形成嵌入的源极和漏极应力源，邻近沟道区域。在源极和漏极区域上形成硅化物接触。去除虚拟栅极堆叠结构，形成最终的栅极堆叠结构。

4. 发明申请

US20130081475A1 ARRAY FOR SENSING AND INDUCING STRAIN IN AN ADHESIVELY BONDED JOINT INCLUDING MAGNETOSTRICTIVE MATERIAL 有权
标题翻译：用于感应和诱导粘性粘合剂中的应变的阵列，包括磁性材料
公开(公告)号：US20130081475A1
公开(公告)日：2013-04-04
申请号：US13556504
申请日：2012-07-24
申请人： Robert J. Miller , Gary E. Georgeson
发明人： Robert J. Miller , Gary E. Georgeson
IPC分类号： G01L1/12 , G01R33/18
CPC分类号： G01L1/125 , B29C65/4855 , B29C65/488 , B29C65/489 , B29C65/8284 , B29C66/1122 , B29C66/45 , B29C66/721 , B29K2101/10 , B29K2101/12 , B29K2105/06 , G01B7/24 , G01N19/04 , G01N27/72 , G01N29/2437 , G01N2203/0244 , G01N2203/0635 , G01N2203/0658 , G01N2291/0231 , G01N2291/02827 , G01N2291/2694 , G01R33/18
摘要： Sensing strain in an adhesively bonded joint includes inducing a strain wave in the joint, and sensing a change in local magnetic characteristics in the joint.
摘要翻译：在粘合接合中的感应应变包括在接头中引起应变波，并感测接头中局部磁特性的变化。

5. 发明授权

US08330086B2 Magnetic heating blanket 有权
标题翻译：磁加热毯
公开(公告)号：US08330086B2
公开(公告)日：2012-12-11
申请号：US12638960
申请日：2009-12-15
申请人： Robert J. Miller , David F. Taylor , Marc R. Matsen
发明人： Robert J. Miller , David F. Taylor , Marc R. Matsen
IPC分类号： H05B6/64
CPC分类号： H05B6/106 , B29C73/10 , B29C73/30 , B29C2035/0811 , H05B2206/023
摘要： A heating blanket comprises a conductor for receiving current and generating a magnetic field in response to the current. The heating blanket may include a susceptor sleeve formed of magnetic material having a Curie temperature. The susceptor sleeve may extend along the conductor and may be inductively heated in response to the magnetic field.
摘要翻译：加热毯包括用于接收电流并响应于电流产生磁场的导体。加热毯可以包括由具有居里温度的磁性材料形成的基座套筒。感受器套筒可以沿着导体延伸并且可以响应于磁场感应加热。

6. 发明申请

US20120305167A1 AIRCRAFT STRUCTURES BONDED WITH ADHESIVE INCLUDING MAGNETOSTRICTIVE MATERIAL 有权
标题翻译：与粘合剂结合的飞机结构，包括磁性材料
公开(公告)号：US20120305167A1
公开(公告)日：2012-12-06
申请号：US11956216
申请日：2007-12-13
申请人： Diane C. Rawlings , Robert J. Miller , Kenneth A. Krienke , James H. Mabe , Robert T. Ruggeri , Dan J. Clingman
发明人： Diane C. Rawlings , Robert J. Miller , Kenneth A. Krienke , James H. Mabe , Robert T. Ruggeri , Dan J. Clingman
IPC分类号： B32B37/12 , B32B33/00 , B32B41/00 , B32B37/14 , B32B43/00
CPC分类号： B29C66/721 , B29C65/4815 , B29C65/4835 , B29C65/485 , B29C65/4855 , B29C65/4875 , B29C65/8253 , B29C65/8284 , B29C66/7212 , B29C70/88 , B29K2101/10 , B29K2101/12 , B29K2105/16 , B29K2503/06 , B29K2705/00 , B29K2705/12 , B29K2995/0003 , B29L2031/3082 , B29L2031/3085 , B64C1/06 , B64F5/60 , C09J5/00 , C09J9/00 , C09J11/00 , G01L1/125 , G01M5/0016 , G01M5/0041 , G01M5/0091 , G01N29/2412 , Y02T50/43 , Y10T403/477 , B29K2307/04
摘要： First and second aircraft structures are bonded together with an adhesive including strain-sensitive magnetostrictive material.
摘要翻译：第一和第二飞行器结构用包括应变敏感的磁致伸缩材料的粘合剂粘合在一起。

7. 发明授权

US08250928B2 Measurement of strain in an adhesively bonded joint including magnetostrictive material 有权
标题翻译：包括磁致伸缩材料在内的粘合接头中的应变测量
公开(公告)号：US08250928B2
公开(公告)日：2012-08-28
申请号：US12169768
申请日：2008-07-09
申请人： Robert J. Miller , Gary E. Georgeson
发明人： Robert J. Miller , Gary E. Georgeson
IPC分类号： G01L1/00
CPC分类号： G01L1/125 , B29C65/4855 , B29C65/488 , B29C65/489 , B29C65/8284 , B29C66/1122 , B29C66/45 , B29C66/721 , B29K2101/10 , B29K2101/12 , B29K2105/06 , G01B7/24 , G01N19/04 , G01N27/72 , G01N29/2437 , G01N2203/0244 , G01N2203/0635 , G01N2203/0658 , G01N2291/0231 , G01N2291/02827 , G01N2291/2694 , G01R33/18
摘要： Sensing strain in an adhesively bonded joint includes inducing a strain wave in the joint, and sensing a change in local magnetic characteristics in the joint.
摘要翻译：在粘合接合中的感应应变包括在接头中引起应变波，并感测接头中局部磁特性的变化。

8. 发明申请

US20110202321A1 METHOD FOR OPTIMISING THE SHAPE OF AN AEROFOIL 审中-公开
标题翻译：优化AEROFOIL形状的方法
公开(公告)号：US20110202321A1
公开(公告)日：2011-08-18
申请号：US13125410
申请日：2009-11-18
申请人： Hang W. Lung , Martin N. Goodhand , Robert J. Miller , Michael A. Howard
发明人： Hang W. Lung , Martin N. Goodhand , Robert J. Miller , Michael A. Howard
IPC分类号： G06F17/50
CPC分类号： F01D5/141 , B64C3/14 , B64C2003/146 , B64C2003/147 , F01D9/041 , F03D1/06 , F04D27/001 , F04D29/324 , F04D29/544 , F05B2240/301 , F05D2240/301 , F05D2250/70 , Y02E10/721 , Y02E10/726 , Y02T50/12 , Y02T50/673
摘要： A method for defining the shape of an edge of an aerofoil comprises the following steps: obtaining a starting value for the thickness of the edge; defining a distance from the edge of the aerofoil in terms of the thickness; over the defined distance, defining a space S in terms of normalised camberline and normalised thickness; transforming the space S to a new space S′; parameterising the new space S′ to obtain new values for normalised camberline and normalised thickness; defining a new shape for the edge using the new parameter values. In a preferred embodiment, the transforming step comprises applying a parabolic function to the space S.
摘要翻译：用于限定机翼边缘形状的方法包括以下步骤：获得边缘厚度的起始值; 根据厚度限定与机翼边缘的距离; 在规定的距离上，以归一化的弯度线和归一化的厚度来定义空间S; 将空间S转换为新空间S'; 参数化新空间S'以获得标准化曲线和归一化厚度的新值; 使用新的参数值为边缘定义新的形状。在优选实施例中，变换步骤包括对空间S施加抛物线函数。

9. 发明授权

US07838942B2 Substrate solution for back gate controlled SRAM with coexisting logic devices 有权
标题翻译：用于具有共存逻辑器件的背栅控制SRAM的衬底解决方案
公开(公告)号：US07838942B2
公开(公告)日：2010-11-23
申请号：US12144272
申请日：2008-06-23
申请人： Robert H. Dennard , Wilfried E. Haensch , Arvind Kumar , Robert J. Miller
发明人： Robert H. Dennard , Wilfried E. Haensch , Arvind Kumar , Robert J. Miller
IPC分类号： H01L29/76
CPC分类号： H01L27/1108
摘要： A semiconductor structure that includes at least one logic device region and at least one static random access memory (SRAM) device region wherein each device region includes a double gated field effect transistor (FET) wherein the back gate of each of the FET devices is doped to a specific level so as to improve the performance of the FET devices within the different device regions is provided. In particular, the back gate within the SRAM device region is more heavily doped than the back gate within the logic device region. In order to control short channel effects, the FET device within the logic device region includes a doped channel, while the FET device within the SRAM device region does not. A none uniform lateral doping profile with a low net doping beneath the source/drain regions and a high net doping underneath the channel would provide additional SCE control for the logic device.
摘要翻译：一种半导体结构，其包括至少一个逻辑器件区域和至少一个静态随机存取存储器（SRAM）器件区域，其中每个器件区域包括双门控场效应晶体管（FET），其中每个FET器件的背栅极掺杂提供了特定的水平，以提高不同器件区域内的FET器件的性能。特别地，SRAM器件区域内的背栅极比逻辑器件区域内的后栅极重掺杂。为了控制短沟道效应，逻辑器件区域内的FET器件包括掺杂沟道，而SRAM器件区域内的FET器件不是。在源极/漏极区域之下具有低净掺杂的非均匀横向掺杂分布和在沟道下方的高净掺杂将为逻辑器件提供附加的SCE控制。

10. 发明申请

US20100241120A1 INTRAMEDULLARY NAIL DEVICE AND METHOD FOR REPAIRING LONG BONE 审中-公开
标题翻译：内钉装置和修复长骨的方法
公开(公告)号：US20100241120A1
公开(公告)日：2010-09-23
申请号：US11576452
申请日：2004-10-04
申请人： John Gary Bledsoe , Berton Roy Moed , Sridhar Condoor , Kevin Anthony Shields , Timothy Patrick Alford , Robert J. Miller, IV
发明人： John Gary Bledsoe , Berton Roy Moed , Sridhar Condoor , Kevin Anthony Shields , Timothy Patrick Alford , Robert J. Miller, IV
IPC分类号： A61B17/58 , A61B17/56
CPC分类号： A61B17/7208 , A61B17/7225 , A61B17/921 , A61B2017/00867
摘要： The present invention describes a intramedullary nail that is useful in the repair of long bone fractures, wherein the nail has a flexible state, which allows for the insertion of the nail through any number of incisions that may be off center of the intramedullary canal, and a rigid state, which allows the nail to provide adequate support to mend the long bone. Several embodiments of an intramedullary nail are described, including a nail comprising a shape memory nickel-titanium alloy, which has an austenite start temperature of about 15° C. and an austenite finish temperature of about 35° C., and a nail comprising loosely fitting multiple links that can be tightened to provide rigidity when properly set in the intramedullary canal.
摘要翻译：本发明描述了可用于修复长骨骨折的髓内钉，其中指甲具有柔性状态，其允许钉穿过可能位于髓内中心的任何数量的切口，以及刚性状态，其允许钉子提供足够的支撑来修补长骨。描述了髓内钉的几个实施方案，包括包含形状记忆镍钛合金的指甲，其具有约15℃的奥氏体开始温度和约35℃的奥氏体终止温度，以及松散地包含的指甲配合可以收紧的多个连杆，以便在髓内管适当设置时提供刚性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式